G. Sun

Epitaxial Graphene on SiC(0001): More Than Just Honeycombs

Using scanning tunneling microscopy with Fe-coated W tips and first-principles calculations, we show that the interface of epitaxial graphene/SiC(0001) is a warped graphene layer with hexagon-pentagon-heptagon (H(5,6,7)) defects that break the honeycomb symmetry, thereby inducing a gap and states below E(F near the K point. Although the next graphene layer assumes the perfect honeycomb lattice, its interaction with the warped layer modifies )the dispersion about the Dirac point. These results explain recent angle-resolved photoemission and carbon core-level shift data and solve the long-standing problem of the interfacial structure of epitaxial graphene on SiC(0001).

Atomic-scale imaging and manipulation of ridges on epitaxial graphene on 6H-SiC(0001)

Ridges are observed on epitaxial graphene on 6H-SiC(0001) by scanning tunneling microscopy (STM). Atomic resolution imaging reveals that they are in fact bulged regions of the graphene layer, occurring as a result of bending and buckling to relieve the compressive strain. Furthermore, their length, direction, and distribution can be manipulated, and new ones can even be created by the tip-surface interactions during STM imaging. The lower limit of terrace size for ridge formation is estimated to be approximately 80 nm, and nearly ridge-free graphene film can be obtained on vicinal 3.5 degrees miscut substrates.

Electron standing waves on the GaN(0001)-pseudo (1 × 1) surface: a FT-STM study at room temperature.

We report the direct imaging of standing waves on a GaN(0001)-pseudo (1 × 1) metallic surface, which consists of two atomic Ga layers with the top layer incommensurate. Two types of periodic oscillation are observed by scanning tunneling microscopy at room temperature. The longer wavelength standing waves are due to electron scattering by dislocation-induced steps and two-dimensional InN islands. The localized shorter wavelength waves are attributed to a structural transition of the incommensurate Ga bilayer to a tetrahedral Ga bilayer after the growth of the InN islands.