Jin-Feng Jia

Epitaxial growth of two-dimensional stanene

Following the first experimental realization of graphene, other ultrathin materials with unprecedented electronic properties have been explored, with particular attention given to the heavy group-IV elements Si, Ge and Sn. Two-dimensional buckled Si-based silicene has been recently realized by molecular beam epitaxy growth, whereas Ge-based germanene was obtained by molecular beam epitaxy and mechanical exfoliation. However, the synthesis of Sn-based stanene has proved challenging so far. Here, we report the successful fabrication of 2D stanene by molecular beam epitaxy, confirmed by atomic and electronic characterization using scanning tunnelling microscopy and angle-resolved photoemission spectroscopy, in combination with first-principles calculations. The synthesis of stanene and its derivatives will stimulate further experimental investigation of their theoretically predicted properties, such as a 2D topological insulating behaviour with a very large bandgap, and the capability to support enhanced thermoelectric performance, topological superconductivity and the near-room-temperature quantum anomalous Hall effect.

Interface-Induced High-Temperature Superconductivity in Single Unit-Cell FeSe Films on SrTiO3

We report high transition temperature superconductivity in one unit-cell (UC) thick FeSe films grown on a Se-etched SrTiO3 (001) substrate by molecular beam epitaxy (MBE). A superconducting gap as large as 20 meV and the magnetic field induced vortex state revealed by in situ scanning tunneling microscopy (STM) suggest that the superconductivity of the 1 UC FeSe films could occur around 77 K. The control transport measurement shows that the onset superconductivity temperature is well above 50 K. Our work not only demonstrates a powerful way for finding new superconductors and for raising TC, but also provides a well-defined platform for systematic studies of the mechanism of unconventional superconductivity by using different superconducting materials and substrates.

Superconductivity above 100 K in single-layer FeSe films on doped SrTiO3

Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China. Department of Physics, Tsinghua University, Beijing 100084, China. Department of Physics and Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA. *Correspondence to: canhualiu@sjtu.edu.cn; qkxue@mail.tsinghua.edu.cn; jfjia@sjtu.edu.cn.

Landau quantization of topological surface states in Bi2Se3.

1 Department of Physics, Tsinghua University, Beijing 100084, China 2 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 3 Microsoft Research, Station Q, University of California, Santa Barbara, CA 93106, USA 4 Department of Physics, Stanford University, Stanford CA 94305, USA 5 Physikalisches Institut, Universität Würzburg, D-97074 Würzburg, Germany * These authors contributed equally to this work. ¶ To whom correspondence should addressed. Email: xc@mail.tsinghua.edu.cn, xcma@aphy.iphy.ac.cn

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit

High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.

Direct observation of nodes and twofold symmetry in FeSe superconductor.

Scanning tunneling spectroscopy suggests an orbital ordering mechanism for electron pairing in an iron-based superconductor. We investigated the electron-pairing mechanism in an iron-based superconductor, iron selenide (FeSe), using scanning tunneling microscopy and spectroscopy. Tunneling conductance spectra of stoichiometric FeSe crystalline films in their superconducting state revealed evidence for a gap function with nodal lines. Electron pairing with twofold symmetry was demonstrated by direct imaging of quasiparticle excitations in the vicinity of magnetic vortex cores, Fe adatoms, and Se vacancies. The twofold pairing symmetry was further supported by the observation of striped electronic nanostructures in the slightly Se-doped samples. The anisotropy can be explained in terms of the orbital-dependent reconstruction of electronic structure in FeSe.

Spatial and Energy Distribution of Topological Edge States in Single Bi(111) Bilayer

Recent studies show that two low-energy van Hove singularities (VHSs) seen as two pronounced peaks in the density of states could be induced in a twisted graphene bilayer. Here, we report angle-dependent VHSs of a slightly twisted graphene bilayer studied by scanning tunneling microscopy and spectroscopy. We show that energy difference of the two VHSs follows ΔE(vhs)∼ℏν(F)ΔK between 1.0° and 3.0° [here ν(F)∼1.1 × 10(6) m/s is the Fermi velocity of monolayer graphene, and ΔK = 2Ksin(θ/2) is the shift between the corresponding Dirac points of the twisted graphene bilayer]. This result indicates that the rotation angle between graphene sheets does not result in a significant reduction of the Fermi velocity, which quite differs from that predicted by band structure calculations. However, around a twisted angle θ∼1.3°, the observed ΔE(vhs)∼0.11 eV is much smaller than the expected value ℏν(F)ΔK∼0.28 eV at 1.3°. The origin of the reduction of ΔE(vhs) at 1.3° is discussed.By combining scanning tunneling microscopy and spectroscopy, angle-resolved photoemission spectroscopy, and density functional theory band calculations, we directly observe and resolve the one-dimensional edge states of single bilayer (BL) Bi(111) islands on clean Bi(2)Te(3) and Bi(111)-covered Bi(2)Te(3) substrates. The edge states are localized in the vicinity of step edges having an ∼2  nm wide spatial distribution in real space and reside in the energy gap of the Bi(111) BL. Our results demonstrate the existence of nontrivial topological edge states of single Bi(111) bilayer as a two-dimensional topological insulator.

Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H–SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2×1011/cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.Atomically flat thin films of topological insulator Bi{sub 2}Se{sub 3} have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi{sub 2}Se{sub 3} films. The as-grown films without doping exhibit a low defect density of 1.0{+-}0.2x10{sup 11}/cm{sup 2}, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

Experimental Detection of a Majorana Mode in the core of a Magnetic Vortex inside a Topological Insulator-Superconductor Bi 2 Te 3 / NbSe 2 Heterostructure

Majorana fermions have been intensively studied in recent years for their importance to both fundamental science and potential applications in topological quantum computing1,2. Majorana fermions are predicted to exist in a vortex core of superconducting topological insulators3. However, they are extremely difficult to be distinguished experimentally from other quasiparticle states for the tiny energy difference between Majorana fermions and these states, which is beyond the energy resolution of most available techniques. Here, we overcome the problem by systematically investigating the spatial profile of the Majorana mode and the bound quasiparticle states within a vortex in Bi2Te3/NbSe2. While the zero bias peak in local conductance splits right off the vortex center in conventional superconductors, it splits off at a finite distance ~20nm away from the vortex center in Bi2Te3/NbSe2, primarily due to the Majorana fermion zero mode. While the Majorana mode is destroyed by reducing the distance between vortices, the zero bias peak splits as a conventional superconductor again. This work provides strong evidences of Majorana fermions and also suggests a possible route to manipulating them.

Majorana Zero Mode Detected with Spin Selective Andreev Reflection in the Vortex of a Topological Superconductor.

Recently, theory has predicted a Majorana zero mode (MZM) to induce spin selective Andreev reflection (SSAR), a novel magnetic property which can be used to detect the MZM. Here, spin-polarized scanning tunneling microscopy or spectroscopy has been applied to probe SSAR of MZMs in a topological superconductor of the Bi_{2}Te_{3}/NbSe_{2} heterostructure. The zero-bias peak of the tunneling differential conductance at the vortex center is observed substantially higher when the tip polarization and the external magnetic field are parallel rather than antiparallel to each other. This spin dependent tunneling effect provides direct evidence of MZM and reveals its magnetic property in addition to the zero energy modes. Our work will stimulate MZM research on these novel physical properties and, hence, is a step towards experimental study of their statistics and application in quantum computing.