G. Unterborsch

High-power performance of a high-speed photodetector

The high power performance of an ultrafast GaInAs p-i-n photodiode photodetector with integrated optical waveguide and biasing network is demonstrated. Up to about +20 dBm optical peak power the FWHM of 9 ps remains nearly constant proving the applicability in EDFA-based 40 Gbit/s receivers.

Fully-integrated polarization-diversity coherent receiver module for 100G DP-QPSK

A new compact coherent receiver module comprising a micro-optic polarization beam splitter and two InP-based 90° hybrids with integrated photodiodes is characterized at 112 Gbit/s DP-QPSK. A penalty of only 1.3 dB in OSNR sensitivity at a BER of 10−3 compared to theory was obtained at C-band wavelengths.

Ultrafast, high-power 1.55 /spl mu/m side-illuminated photodetector with integrated spot size converter

40 Gbit/s photodetectors require high bandwidth at high power levels, as supplied by waveguide-integrated p-i-n diodes on InP. By monolithic integration of a spot size transformer a responsivity of 0.5 A/W is achieved and fiber alignment tolerances are increased by one order of magnitude.

Narrow-band photoreceiver OEIC on InP operating at 38 GHz

We report on the successful monolithic integration of an InP-based photoreceiver operating in the narrow band around 38 GHz at a wavelength of 1.55 /spl mu/m, The optoelectronic integrated circuit (OEIC) incorporates two types of high-speed devices, a submicrometer metal-semiconductor-metal photodetector (MSM PD) made of InGaAs-InP and quarter-micrometer high-electron-mobility-transistors (HEMTs) based on a lattice-matched InGaAs-InAlAs-InP layer stack. For this purpose a fabrication process requiring only twelve main steps including a metal-organic chemical vapor deposition growth for the MSM PD layers and a MBE regrowth for the HEMT layers has been developed. At 38 GHz, a responsivity of 3.5 A/W for the OEIC is achieved.

Hybrid integrated 40 Gb/s DPSK receiver on SOI

A DPSK receiver using a flip-chip hybrid of InP photodetectors on SOI boards with waveguide delay line interferometer and SOA preamplifier on SOI boards are developed. The horizontal waveguide integration enables bandwidths exceeding 40 GHz.

A monolithically integrated balanced mixer OEIC on InP for coherent receiver applications

We report on the fabrication and characterization of a monolithically integrated balanced mixer receiver on InP consisting of a 3-dB coupler, twin balanced waveguide integrated photodiodes, and a low-noise electrical preamplifier. The receiver OEIC exhibits a transimpedance of 223 Omega and a 3-dB bandwidth of 1 GHz. Heterodyne operation and local laser noise cancellation capability of the OEIC are demonstrated.<<ETX>>

Ultrafast, high-power waveguide fed photodetector with integrated spot size converter

The monolithic integration of an ultrafast photodetector with an spot size transformer is presented. Using a shifting mask technique optimized taper ramp profiles are fabricated. The integrated devices exhibit a more than doubled responsivity (0.7 A/W) and about one magnitude higher misalignment tolerances compared to devices without spot size converters. The ultra large bandwith (f/sub 3dB/>50 GHz) and the excellent high power behaviour is unimpaired by the integration of the spot size converter.

First system experiments with a monolithically integrated tunable polarization diversity heterodyne receiver OEIC on InP

System performance of an integrated polarization diversity heterodyne receiver optoelectronic IC (OEIC) is reported. The OEIC is monolithically integrated on InP. It includes a tunable 4 section DBR laser (quasi continuous tuning range 3.5 nm) and balanced photodiodes. The packaged OEIC is supplied with a fiber pigtail. Stable and polarization independent operation is achieved without any tendency for a bit error floor. The sensitivity at 1550.2 nm is -33.5 dBm at a bitrate of 140 Mbit/s. The performance of the OEIC based receiver is verified by operating in an experimental OFDM-TV distribution system with 4 channels.<<ETX>>

40 Gbit/s eye pattern of a photoreceiver OEIC with monolithically integrated spot size converter

A combination of an InP-based monolithically integrated photoreceiver with a spot size converter is presented. A total receiver conversion gain of more than 1A/W, an extended bandwidth of 47 GHz for error corrected 40 Gbit/s application are achieved.

First heterodyne receiver frontend module including a polarization diversity receiver OEIC on InP

For the first time a packaged polarization diversity coherent receiver OEIC including detector units (photodetectors, JFET, load resistor) has been fabricated with the following data: waveguide loss 2 dB, 3 dB balance within 0.4 dB, polarization extinction >30 dB (TM) and >17 dB (TE), 3 dB cutoff frequency of 0.9 GHz, common mode rejection ratio 30 dB.<<ETX>>