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Dive into the research topics where Gabriel Ethier-Majcher is active.

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Featured researches published by Gabriel Ethier-Majcher.


Nature Communications | 2014

Complete quantum control of exciton qubits bound to isoelectronic centres

Gabriel Ethier-Majcher; Philippe St-Jean; Gianluca Boso; Alberto Tosi; J. F. Klem; S. Francoeur

In recent years, impressive demonstrations related to quantum information processing have been realized. The scalability of quantum interactions between arbitrary qubits within an array remains however a significant hurdle to the practical realization of a quantum computer. Among the proposed ideas to achieve fully scalable quantum processing, the use of photons is appealing because they can mediate long-range quantum interactions and could serve as buses to build quantum networks. Quantum dots or nitrogen-vacancy centres in diamond can be coupled to light, but the former system lacks optical homogeneity while the latter suffers from a low dipole moment, rendering their large-scale interconnection challenging. Here, through the complete quantum control of exciton qubits, we demonstrate that nitrogen isoelectronic centres in GaAs combine both the uniformity and predictability of atomic defects and the dipole moment of semiconductor quantum dots. This establishes isoelectronic centres as a promising platform for quantum information processing.


Physical Review B | 2010

Charged excitons and biexcitons bound to isoelectronic centers

S. Marcet; C. Ouellet-Plamondon; Gabriel Ethier-Majcher; P. Saint-Jean; R. André; J. F. Klem; S. Francoeur


Physical Review Letters | 2016

High-Fidelity and Ultrafast Initialization of a Hole Spin Bound to a Te Isoelectronic Center in ZnSe.

Philippe St-Jean; Gabriel Ethier-Majcher; R. André; S. Francoeur


Physical Review B | 2015

Dynamics of excitons bound to nitrogen isoelectronic centers in GaAs

Philippe St-Jean; Gabriel Ethier-Majcher; S. Francoeur


Physical Review B | 2014

Recombination dynamics of excitons bound to nitrogen isoelectronic centers inδ-doped GaP

Philippe St-Jean; Gabriel Ethier-Majcher; Y. Sakuma; S. Francoeur


Physical Review B | 2015

Light- and heavy-hole trions bound to isoelectronic centers

Gabriel Ethier-Majcher; Philippe St-Jean; S. Francoeur


Physical Review B | 2018

Energy reversal of light- and heavy-hole excitons bound to isoelectronic centers

Gabriel Ethier-Majcher; Philippe St-Jean; S. Francoeur


Bulletin of the American Physical Society | 2015

Initialization of a hole spin bound to an isoelectronic center

Philippe St-Jean; Gabriel Ethier-Majcher; S. Francoeur


Bulletin of the American Physical Society | 2015

Nearly degenerate light- and heavy-hole trions bound to isoelectronic centers

Gabriel Ethier-Majcher; Philippe St-Jean; S. Francoeur


Bulletin of the American Physical Society | 2014

Complete quantum control of an exciton qubit bound to an isoelectronic center in GaAs

Gabriel Ethier-Majcher; Philippe St-Jean; Gianluca Boso; Alberto Tosi; S. Francoeur

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Philippe St-Jean

École Polytechnique de Montréal

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S. Francoeur

École Polytechnique de Montréal

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J. F. Klem

Sandia National Laboratories

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R. André

Centre national de la recherche scientifique

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Alaric Bergeron

École Polytechnique de Montréal

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C. Ouellet-Plamondon

École Polytechnique de Montréal

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S. Marcet

École Polytechnique de Montréal

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Gianluca Boso

Polytechnic University of Milan

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