Gang Du

Large stable strain memory effect in poled Mn-doped Pb(Mn1/3Sb2/3)O3-Pb(Zr,Ti)O3 ceramics

Large strain memory effect was confirmed in the poled and aged Mn-doped 0.05Pb(Mn1/3Sb2/3)O3-0.50PbZrO3-0.45PbTiO3 ceramics due to the presence of asymmetric strain hysteresis curve with two stable strain states at zero electric field. This strain memory is two times larger than that of the unipolar strain output. Moreover, the large strain memory effect is quite stable at high electric field or down to 0.01 Hz and shows good stability even after 20 000 fatigue cycles. These results indicate that strain memory piezoelectric actuator, which could keep its output strain without any operating fields, may be fabricated using this kind of material.

Linear temperature scaling of ferroelectric hysteresis in Mn-doped Pb(Mn1/3Sb2/3)O3-Pb(Zr,Ti)O3 ceramic with internal bias field

The temperature scaling of dynamic hysteresis was investigated in Mn-doped Pb(Mn1/3Sb2/3)O3-Pb(Zr,Ti)O3 ceramic with internal bias field. A set of simple linear temperature scaling relations were established for hysteresis area 〈A〉, coercivity Ec, and internal bias field Ei, which are different from the power-law scaling relationships for the soft and hard PZT ceramics. The proposed scaling relation between 〈A〉 and T can be predicted by the temperature dependent response of Ec and vice versa. It is suggested that the thermal deaging which related to the redistribution of the preferentially oriented defect dipoles is responsible for these dynamic hysteresis behaviors.

Temperature scaling behavior of dynamic hysteresis for (K,Na)NbO3 lead-free ferroelectric films

The temperature scaling of the ferroelectric hysteresis was first investigated in (K,Na)NbO3 films grown on SrRuO3/SrTiO3 over a temperature range from 100 K to 340 K. The power-law temperature scaling relations were obtained for ⟨A⟩, Pr, and Ec in the two distinguished temperature regions, separated by T ∼ 245 K. It was observed that ⟨A⟩ and Pr had a similar temperature dependence, compared with Ec. With increasing T, ⟨A⟩ and Pr decreased in the first region, and increased in the second region. While Ec decreased in the whole temperature range, but with different decrease rate in the two temperature regions.

Low-temperature crystallization of high performance Pb0.4Sr0.6TiO3 films compatible with the current silicon-based microelectronic technology

This investigation presents a simple approach to realize the low temperature crystallization of Pb0.4Sr0.6TiO3 thin films at 400 °C by taking advantage of well controlled lead excess and kinetic-driving-force compensated thermodynamics crystalline via sputtering deposition. The thin films prepared at low temperature show fine-grained micro-structure because of the suppressed grain growth, furthermore, the intrinsic dielectric response can be modulated by the distinct level of crystallinity. The film processed at 450 °C exhibited a dielectric constant of 435 and high figure merit of 130 at 400 kV/cm, superior ferroelectric property, and stable performance with temperature and frequency.

Effect of interface configurations on the dynamic scaling behavior of Pb(Zr0.53Ti0.47)O3 thin films

The ferroelectric hysteresis and the scaling relations of hysteresis area ⟨A⟩ against field amplitude E and frequency f in Pb(Zr0.53Ti0.47)O3 thin films using platinum and LaNiO3 (LNO) as both bottom and top electrodes were systematically investigated. Interestingly, it was found that the influence of top electrodes is dominant in affecting the scaling behavior of the dynamic hysteresis, which may be the result of the asymmetric interface structure deriving from the differences in conductivity and crystallization of the top and bottom LNO electrodes. The bottom electrodes affect the scaling behavior slightly via influencing the micro-structural and level of space charge.