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Dive into the research topics where Gaopeng Chen is active.

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Featured researches published by Gaopeng Chen.


radio frequency integrated circuits symposium | 2010

A 6GHz direct digital synthesizer MMIC with nonlinear DAC and wave correction ROM

Danyu Wu; Gaopeng Chen; Jianwu Chen; Xinyu Liu; Lixin Zhao; Zhi Jin

This paper proposes a new DDS architecture combined with Nonlinear DAC and Wave-Correction-ROM (WCR) which shows both high operating speed and accuracy. Based on this architecture, a 6GHz 8-bit DDS MMIC is designed and fabricated in 60GHz GaAs HBT Technology. The DDS MMIC includes 8-bit pipeline accumulator, an 8×8×3bits WCR, two combined DACs and an analog Gilbert Cell for sine-wave generation with 8-bit amplitude resolution. The DDS chip is tested in on-wafer measurement system. The measured spurious free dynamic range (SFDR) is 33.96dBc with 2.367GHz output under a 6GHz maximum clock (FCW=0×65). It shows an average SFDR of 37.5dBc and the worst case SFDR of 31.4dBc (FCW=0×70) within the whole Nyquist band under a 5GHz clock frequency. The whole chip occupies 2.4×2mm2 of area consuming 3.27W of power from a single −4.6Vpower supply.


radio frequency integrated circuits symposium | 2010

A 10GHz 8-bit Direct Digital Synthesizer implemented in GaAs HBT technology

Gaopeng Chen; Danyu Wu; Zhi Jin; Jin Wu; Xinyu Liu

This paper presents a 10GHz 8-bit Direct Digital Synthesizer (DDS) Microwave Monolithic Integrated Circuit (MMIC) implemented in 1µm GaAs HBT technology. The DDS takes a Double-Edge-Trigger (DET) 8-stage pipeline accumulator with sine-weighted DAC based ROM-less architecture, that can maximize the utilization ratio of GaAs HBTs high-speed potential. With an output frequency up to 5GHz, the DDS gives an average Spurious Free Dynamic Range (SFDR) of 23.24dBc through the first Nyquist band, and consumes 2.4W of DC power from a single −4.6V DC supply. Using 1651 GaAs HBT transistors, the total area of the DDS chip is 2.4×2.0mm2.


international conference on microwave and millimeter wave technology | 2010

Novel high efficiency broadband Ku band power combiner

Danyu Wu; Xiaojuan Chen; Gaopeng Chen; Xinyu Liu

High power solid-state power amplifiers require a high efficiency power dividing/combining structure to keep the power loss as low as possible. The heat sinking capability of the divider/combiner also limits its maximum output power with continues wave (CW) configuration. In this paper, we introduce a novel 8-way Ku band power divider/combiner system, it demonstrate advantages of low loss, broadband and good heat sinking capability simultaneously. As its sub-components, low loss probes for waveguide-to-microstrip transition and low loss broadband 1-to-2 power combiners are designed and fabricated. The measured back-to-back insertion loss of the whole 8-way power combiner is lower than 0.5dB in the whole Ku band, and the corresponding combining efficiency is as high as 94.5%. The simulated thermal resistance of the system is as low as 0.21°C/W, indicating the proposed power combiner is able to produce 50W of CW output power with commercial available Monolithic Microwave Integrated Circuits (MMICs).


international conference on microwave and millimeter wave technology | 2010

An ultra-high-speed direct digital synthesizer MMIC

Gaopeng Chen; Danyu Wu; Zhi Jin; Xinyu Liu

This paper presents an ultra-high-speed direct digital frequency synthesizer (DDS) microwave monolithic integrated circuit (MMIC) implemented in 1μm GaAs HBT technology. The DDS has the capabilities of direct frequency modulations with 8-bit frequency resolutions. Utilizing a Double-Edge-Trigger (DET) 8-stage pipeline accumulator with sine-weighted DAC based ROM-less architecture, this DDS MMIC can maximize the utilization ratio of GaAs HBTs high-speed potential. With an external clock output frequency of 5GHz, the DDS can output sine signal of up to 5GHz frequency giving an average Spurious Free Dynamic Range (SFDR) of 23.24dBc through the first Nyquist band. The DDS MMIC consumes 2.4W of DC power from a single −4.6V DC supply. Using 1651 GaAs HBT transistors, the total area of the DDS chip is 2.4×2.0mm2.


Journal of Semiconductors | 2011

An InGaAs/InP 40 GHz CML static frequency divider

Yongbo Su; Zhi Jin; Wei Cheng; Ji Ge; Xiantai Wang; Gaopeng Chen; Xinyu Liu; An-Huai Xu; Ming Qi

Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technologys ability to implement high speed digital and integrated high performance mixed-signal circuits. We report a 2 : 1 static frequency divider in InGaAs/InP heterojunction bipolar transistor technology. This is the first InP based digital integrated circuit ever reported on the mainland of China. The divider is implemented in differential current mode logic (CML) with 30 transistors. The circuit operated at a peak clock frequency of 40 GHz and dissipated 650 mW from a single −5 V supply.


international conference on microwave and millimeter wave technology | 2010

A 6-GHz 64×3-bit ROM for DDS application in GaAs technology

Jianwu Chen; Danyu Wu; Gaopeng Chen; Zhi Jin; Xinyu Liu

A 64×3-bit read-only memory (ROM), employing dual decoder architecture, is designed in GaAs HBT technology. It is adopted in Direct Digital Synthesizer (DDS) for phase-to-amplitude conversion. To enhance the performance of the ROM, the memory cell is designed with a transistor to assign both a high and low bit value. The ROM draws a current of 130 mA from a −4.6 V power supply. Using 700 GaAs HBT transistors, the total area is 1.2 × 0.6 mm2. The ROM is integrated as part of an 8-bit DDS, which is measured to work functionally at 6 GHz. This paper demonstrates a fastest GaAs HBT ROM for DDS.


Chinese Physics Letters | 2000

Single W boson production at root s=189 GeV

杨海军; 陈国明; 杨民; 熊兆华; 卢亮; 吕雨生; 陈和生; 唐孝威; Haijun Yang; Gaopeng Chen; Meng Yang; Zhuan-Xian Xiong; Li Lu; Yaxiang Lu; Hongsheng Chen; Xianzhu Tang; Bn Jin

Single W boson production is analyzed in a data sample collected by L3 detector at Large Electron Positron Collider in 1998. The integrated luminosity is 176.4 pb-1 with center-of-mass energy at √s = 189 GeV. The signal consists of large missing energy final states with a single energetic lepton or two hadronic jets. The total cross section of single W production is measured to be 0.58 ± 0.13 ± 0.04 pb, in good agreement with standard model prediction. From this measurement, the limits on the anomalous γWW triple-gauge-boson couplings are derived at 95% confidence level: -0.48< Δκγ < 0.38 and -0.50 < λγ < 0.41.


Archive | 2010

Bias circuit used in Ku waveband internally-matched field effect transistor

Gaopeng Chen; Xiaojuan Chen; Xinyu Liu; Bin Li


Archive | 2011

ROM-less DDS circuit structure

Gaopeng Chen; Danyu Wu; Zhi Jin; Jin Wu; Xinyu Liu


Archive | 2010

Stepped ridge waveguide structure applied to microstrip-waveguide transition

Xiaojuan Chen; Xinyu Liu; Yuepeng Yan; Zhongzi Chen; Tingting Yuan; Gaopeng Chen

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Xinyu Liu

Chinese Academy of Sciences

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Danyu Wu

Chinese Academy of Sciences

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Zhi Jin

Chinese Academy of Sciences

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Jin Wu

Chinese Academy of Sciences

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Jianwu Chen

Chinese Academy of Sciences

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Tingting Yuan

Chinese Academy of Sciences

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Yongbo Su

Chinese Academy of Sciences

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Ji Ge

Chinese Academy of Sciences

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Wei Cheng

Chinese Academy of Sciences

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Xiantai Wang

Chinese Academy of Sciences

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