Gavin Conibeer

Third-generation photovoltaics

Third-generation approaches to photovoltaics (PVs) aim to achieve high-efficiency devices but still use thin-film, second-generation deposition methods. The concept is to do this with only a small increase in areal costs and hence reduce the cost per Watt peak 1 (this metric is the most widely used in the PV industry). Also, in common with Si-based, second-generation, thin-film technologies, these will use materials that are both nontoxic and not limited in abundance. Thus, these third-generation technologies will be compatible with large-scale implementation of PVs. The approach differs from first-generation fabrication of high-quality, low-defect, single-crystal PV devices that have high efficiencies approaching the limiting efficiencies for single-bandgap devices but use energy- and time-intensive techniques.

Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications

We fabricated p-i-n diodes by sputtering alternating layers of silicon dioxide and silicon rich oxide with a nominal atomic ratio O/Si=0.7 onto quartz substrates with in situ boron for p-type and phosphorus for n-type doping. After crystallization, dark and illuminated I-V characteristics show a diode behavior with an open circuit voltage of 373 mV. Due to the thinness of the layers and their corresponding high resistivity, lateral current flow results in severe current crowding. This effect is taken into account when extracting the electronic bandgap based on temperature dependent diode I-V measurements.

Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells

We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4 nm dot with increasing detection wavelength.

Structural characterization of annealed Si1−xCx/SiC multilayers targeting formation of Si nanocrystals in a SiC matrix

Amorphous Si1−xCx/SiC multilayer films were prepared by alternating deposition of Si-rich Si1−xCx and near-stoichiometric SiC layers by using magnetron sputtering. The as-deposited films were annealed at different temperatures (Ta) from 800 to 1100 °C. The influence of Ta and Si content in the Si-rich layer on the layered structural stability and on the formation of Si and/or SiC nanocrystals (NCs) is investigated by a variety of analytical techniques, including x-ray reflectivity (XRR), x-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, and Fourier transform infrared spectrometry (FTIR). XRR showed that Si1−xCx/SiC multilayers annealed at temperatures of up to 800 °C retain their layered structure. XRD revealed that Si NCs were formed in samples with a high Si content in the Si-rich layer for Ta≥800 °C. At annealing temperatures of 900 °C or greater, the formation of Si NCs was accompanied by the formation of β-SiC NCs. Additionally, the formation of Si and SiC NCs was c...

Hot carrier solar cells operating under practical conditions

We theoretically investigated the features of hot carrier solar cells, from which photogenerated carriers are extracted before they are completely thermalized. There are three channels of energy dissipation from photogenerated carriers that lowers the conversion efficiency: thermalization in the absorber, emission from the absorber, and thermodynamically unavoidable heat flux to the ambient. The emission increases with increasing carrier density in the absorber, whereas the heat flux decreases. Previous calculations of the conversion efficiency have been carried out under the supposition of no thermalization of carriers. In this case, the dominant process of energy dissipation is the emission, like conventional solar cells represented by the Shockley and Queisser formula. In practice, the carriers should be extracted to external circuits immediately after photogeneration because they are partially thermalized. This restriction leads to a much smaller carrier density and consequently more significant energ...

Investigation of theoretical efficiency limit of hot carriers solar cells with a bulk indium nitride absorber

Theoretical efficiencies of a hot carrier solar cell considering indium nitride as the absorber material have been calculated in this work. In a hot carrier solar cell highly energetic carriers are extracted from the device before thermalisation, allowing higher efficiencies in comparison to conventional solar cells. Previous reports on efficiency calculations approached the problem using two different theoretical frameworks, the particle conservation (PC) model or the impact ionization model, which are only valid in particular extreme conditions. In addition an ideal absorber material with the approximation of parabolic bands has always been considered in the past. Such assumptions give an overestimation of the efficiency limits and results can only be considered indicative. In this report the real properties of wurtzite bulk InN absorber have been taken into account for the calculation, including the actual dispersion relation and absorbance. A new hybrid model that considers particle balance and energy...

Fourier transform infrared spectroscopy of annealed silicon-rich silicon nitride thin films

A correlation between bonding changes in silicon-rich silicon nitride films, subjected to high temperature annealing under N2 ambient, and the formation of silicon nanocrystals is presented. The postannealing appearance of a shoulder between 1000 and 1100 cm−1 in the Fourier transform infrared (FTIR) spectra of silicon-rich silicon nitride films is attributed to a reordering in the films toward an increased SiN4 bonding configuration resulting from the precipitation of silicon nanocrystals. The FTIR monitoring of bonding changes in these films allows for the indirect verification of silicon nanocrystal formation.

Wrapping the walls of n-TiO2 nanotubes with p-CuInS2 nanoparticles using pulsed-electrodeposition for improved heterojunction photoelectrodes

The CuInS(2) (CIS) nanoparticles were wrapped uniformly throughout the inner and outer walls of TNTs (TNT) by using square wave pulsed-electrodeposition. This structure enables the CuInS(2)-TiO(2) (CIS-TNT) to exhibit p-n junction diode behavior and enhanced photoelectrochemical properties.

Efficient electron transfer in carbon nanodot–graphene oxide nanocomposites

Carbon nanodots (CNDs) have emerged as fascinating materials with exceptional electronic and optical properties, and thus they offer many promising applications in photovoltaics and photocatalysis. In this paper we investigate electron transfer in nanocomposites of CNDs–graphene oxide (GO), –multi-walled carbon nanotubes (MWNTs) and –TiO2 nanoparticles without linker molecules, using steady state and time-resolved spectroscopy. Significant fluorescence quenching was observed in the CND–GO system, and it is attributed to the ultrafast electron transfer from CNDs to GO with a time constant of 400 fs. In comparison, carbon nanotubes result in static quenching of fluorescence in CNDs. No charge transfer was observed in both CND–MWNT and CND–TiO2 nanocomposites. This finding suggests that the CND–GO nanocomposite can be an excellent candidate for hot carrier solar cells due to the effective carrier extraction, broad spectral absorption, weak electron–phonon scattering, and thus a slow cooling rate for hot carriers.

Fabrication and characterization of Si nanocrystals in SiC matrix produced by magnetron cosputtering

Si-rich amorphous silicon carbide thin films were prepared by magnetron cosputtering and were subsequently annealed to form Si nanocrystals embedded in a SiC matrix. A sputter target consisted of a patterned Si wafer on top of a carbon target. The ratio of carbon to silicon in deposited films was adjusted by means of a different silicon wafer open area. X-ray photoelectron spectroscopy spectra show that various compositions were obtained by changing the sputtered area ratio of carbon to silicon target. Analysis of atomic force microscopy shows that surface roughness increases significantly after annealing. Transmission electron microscopy reveals that Si nanocrystals do not form at temperatures less than 800°C, while they are clearly established, with sizes ranging from 3to7nm, as the temperature is at 1100°C. IR spectra show that increase in annealing temperature for the Si-rich Si1−xCx (x<0.5) films favors the formation of Si–C bonds and increase of the short-range order. Optical studies show a blueshif...