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Dive into the research topics where Geoff J. Daniell is active.

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Featured researches published by Geoff J. Daniell.


Optics Letters | 2008

Ultrafast optical Stark mode-locked semiconductor laser

Keith G. Wilcox; Zakaria Mihoubi; Geoff J. Daniell; Stephen Elsmere; Adrian H. Quarterman; I. Farrer; David A. Ritchie; Anne Tropper

We report on 260 fs transform-limited pulses generated directly by an optical Stark passively mode-locked semiconductor disk laser at a 1 GHz repetition rate. A surface recombination semiconductor saturable absorber mirror and a step-index gain structure are used. Numerical propagation modeling of the optical Stark effect confirms that this mechanism is able to form the pulses that we observe.


Optics Express | 2013

Investigation of the role of the lateral photo-Dember effect in the generation of terahertz radiation using a metallic mask on a semiconductor.

Mark E. Barnes; Sam A. Berry; Paul C. Gow; D. McBryde; Geoff J. Daniell; Harvey E. Beere; D. A. Ritchie; Vasilis Apostolopoulos

Pulses of coherent terahertz radiation can be efficiently generated by a lateral diffusion current after ultrafast generation of photo-carriers near a metal interface on the surface of a semiconductor, this is known as the lateral photo-Dember effect. We investigate how the emission depends on the pump spot position, size, power and how it is affected by the application of an applied external bias. We study the role of the metallic mask and how it suppresses emission from the carriers diffusing under it due to a reduction of available radiation states both theoretically and experimentally.


Optics Express | 2012

Terahertz emission by diffusion of carriers and metal-mask dipole inhibition of radiation

Mark E. Barnes; D. McBryde; Geoff J. Daniell; G. Whitworth; Aaron L. Chung; Adrian H. Quarterman; Keith G. Wilcox; A. Brewer; Harvey E. Beere; D. A. Ritchie; Vasilis Apostolopoulos

Terahertz (THz) radiation can be generated by ultrafast photo-excitation of carriers in a semiconductor partly masked by a gold surface. A simulation of the effect taking into account the diffusion of carriers and the electric field shows that the total net current is approximately zero and cannot account for the THz radiation. Finite element modelling and analytic calculations indicate that the THz emission arises because the metal inhibits the radiation from part of the dipole population, thus creating an asymmetry and therefore a net current. Experimental investigations confirm the simulations and show that metal-mask dipole inhibition can be used to create THz emitters.


Optics Express | 2011

Numerical simulation of optical Stark effect saturable absorbers in mode-locked femtosecond VECSELs using a modified two-level atom model.

Adrian H. Quarterman; Stewart Carswell; Geoff J. Daniell; Zakaria Mihoubi; Keith G. Wilcox; Aaron L. Chung; Vasilis Apostolopoulos; A.C. Tropper

The interaction of an optical pulse with a quantum well saturable absorber is simulated using a semi-classical two-level-atom model which has been modified to approximate spectral hole burning in the carrier distribution. Saturable absorption behaviour is examined in the limit where pulse duration approaches the carrier-carrier scattering time. For long pulses bleaching dominates the absorber response but as the pulse duration approaches the carrier-carrier scattering timescale an additional pulse shaping mechanism becomes active, allowing the absorber to continue to shorten pulses beyond the limit set by bleaching. Examination of the spectral and temporal absorption profiles suggests that intense pulses experience additional pulse shortening from the optical Stark effect.


international conference on infrared, millimeter, and terahertz waves | 2011

Simulation of metallic nanostructures for emission of THz radiation using the lateral photo-Dember effect

D. McBryde; Mark E. Barnes; Geoff J. Daniell; Aaron L. Chung; Zakaria Mihoubi; Adrian H. Quarterman; Keith G. Wilcox; A.C. Tropper; Vasilis Apostolopoulos

A 2D simulation for the lateral photo-Dember effect is used to calculate the THz emission of metallic nanostructures due to diffusion currents in order to realize a series of THz emitters.


international conference on numerical simulation of optoelectronic devices | 2008

Numerical model of a vertical-external-cavity surface-emitting semiconductor lasers mode-locked by the optical Stark effect

Zakaria Mihoubi; Geoff J. Daniell; Keith G. Wilcox; Anne Tropper

A numerical model for the evolution of a pulse inside the cavity of a laser containing a quantum well absorber is introduced. The model confirms the optical Stark effect as the mechanism behind the mode-locking of these pulses. The evolution reaches a steady state when a gain bandwidth filter is introduced to balance this effect.


Archive | 2012

Complex Refractive Index Determination Using Planar and Converging Beam Transfer Functions

Vasilis Apostolopoulos; Geoff J. Daniell; Aaron L. Chung

Terahertz time domain spectroscopy can help us to determine the complex refractive index of materials. To achieve this a theoretical model of the spectrometer has to be implemented; a usual method for refractive index determination is to fit a theoretically calculated transfer function to the experimental data. Material parameter extraction models based on transfer functions can be of varying complexity based on the requirements for accuracy and also the difficulty of factoring all experimental parameters. Here, we are going to show how algorithms based on transfer functions with different complexity can be setup. It will be described how a transfer function can be used to extract the refractive index of material and the key stages of the analysis, the fitting algorithm, and the need for phase unwrapping. Transfer functions of an increasing complexity will be shown, with and without the etalon term, using planar or converging beam.


Proceedings of SPIE | 2011

Numerical modelling of optical Stark effect saturable absorbers in mode-locked femtosecond VECSELs

Adrian H. Quarterman; Geoff J. Daniell; Stewart Carswell; Keith G. Wilcox; Zakaria Mihoubi; Aaron L. Chung; Vasilis Apostolopoulos; A.C. Tropper

Quasi-soliton modelocking has been identified as the mechanism responsible for the formation of picosecond pulses in passively mode-locked VECSELs, but neither this mechanism nor Kerr lens modelocking can account for the formation of sub-picosecond pulses from these lasers. Numerical simulations have shown that the optical Stark effect is capable of shortening pulses in the absence of bleaching, but to date no studies have been performed under realistic operating conditions. We model the interaction of an optical pulse with an absorbing quantum well using a semi-classical two level atom approximation. As the bandwidth of a VECSEL pulse is small compared to the spread of energies within a semiconductor band the population of two level atoms is divided into live atoms which interact with the optical field, and dead atoms which do not. Live and dead states are coupled by carrier-carrier scattering. Results from this model show an increase in pulse shortening above that due to saturable absorber bleaching at pulse durations below one picosecond, implying that an additional effect is responsible for the formation of femtosecond pulses. At these pulse durations the model predicts that the absorbing resonance broadens and decreases in amplitude. This is recognisable as a result of the optical Stark effect. The predictions of this model are compared to experimental results from several femtosecond VECSELs. For some modelocked VECSELs an excellent match between simulation and experiment is found, but in other cases the model cannot reproduce experimental results. We conclude that while the optical Stark effect may be the dominant pulse shaping mechanism in some modelocked VECSELs, others appear to be dominated by other effects.


international conference on infrared, millimeter, and terahertz waves | 2010

Material parameter extraction in THz-TDS using a converging beam transfer function

Aaron L. Chung; Zakaria Mihoubi; Geoff J. Daniell; Adrian H. Quarterman; Keith G. Wilcox; Harvey E. Beere; D. A. Ritchie; A.C. Tropper; Vasilis Apostolopoulos

We demonstrate a parameter extraction algorithm based on a theoretical transfer function, which takes into account a converging THz beam. Using this, we successfully extract material parameters from data obtained for a quartz sample with a THz time domain spectrometer.


Journal of Infrared, Millimeter, and Terahertz Waves | 2014

Simulation of terahertz generation from lateral diffusion currents in semiconductor devices

Mark E. Barnes; Geoff J. Daniell; Paul C. Gow; Vasilis Apostolopoulos

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Mark E. Barnes

University of Southampton

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Aaron L. Chung

University of Southampton

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D. McBryde

University of Southampton

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Zakaria Mihoubi

University of Southampton

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Paul C. Gow

University of Southampton

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Sam A. Berry

University of Southampton

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