Vasilis Apostolopoulos

Surface domain engineering in congruent lithium niobate single crystals: A route to submicron periodic poling

We describe a technique for surface domain engineering in congruent lithium niobate single crystals. The method is based on conventional electric-field poling, but involves an intentional overpoling step that inverts all the material apart from a thin surface region directly below the patterned photoresist. The surface poled structures show good domain uniformity, and the technique has so far been applied to produce domain periods as small as ∼1 μm. The technique is fully compatible with nonlinear optical integrated devices based on waveguide structures.

175 GHz, 400-fs-pulse harmonically mode-locked surface emitting semiconductor laser

We report a harmonically mode-locked vertical external cavity surface emitting laser (VECSEL) producing 400 fs pulses at a repetition frequency of 175 GHz with an average output power of 300 mW. Harmonic mode-locking was established using a 300 µm thick intracavity single crystal diamond heat spreader in thermal contact with the front surface of the gain sample using liquid capillary bonding. The repetition frequency was set by the diamond microcavity and stable harmonic mode locking was achieved when the laser cavity length was tuned so that the laser operated on the 117th harmonic of the fundamental cavity. When an etalon placed intracavity next to the gain sample, but not in thermal contact was used pulse groups were observed. These contained 300 fs pulses with a spacing of 5.9 ps. We conclude that to achieve stable harmonic mode locking at repetition frequencies in the 100s of GHz range in a VECSEL there is a threshold pulse energy above which harmonic mode locking is achieved and below which groups of pulses are observed.

Fabrication of piezoelectric micro-cantilevers in domain-engineered LiNbO3 single crystals

We report on a novel route for fabrication of micro-cantilevers in ferroelectric single-crystal lithium niobate (LiNbO3). Using the sequential techniques of photolithographic patterning, electric field poling, direct bonding and domain-oriented differential etching, free-standing cantilevers of dimensions 50 μm × 50 μm × 5 mm in the x, z and y crystallographic directions, respectively, have been fabricated.

Investigation of the role of the lateral photo-Dember effect in the generation of terahertz radiation using a metallic mask on a semiconductor.

Pulses of coherent terahertz radiation can be efficiently generated by a lateral diffusion current after ultrafast generation of photo-carriers near a metal interface on the surface of a semiconductor, this is known as the lateral photo-Dember effect. We investigate how the emission depends on the pump spot position, size, power and how it is affected by the application of an applied external bias. We study the role of the metallic mask and how it suppresses emission from the carriers diffusing under it due to a reduction of available radiation states both theoretically and experimentally.

Passively harmonically mode-locked vertical-external-cavity surface-emitting laser emitting 1.1 ps pulses at 147 GHz repetition rate

Coupled-cavity passive harmonic mode-locking of a quantum well based vertical-external-cavity surface-emitting laser has been demonstrated, yielding an output pulse train of 1.5 ps pulses at a repetition rate of 80 GHz and with an average power of 80 mW. Harmonic mode-locking results from coupling between the main laser cavity and a cavity formed within the substrate of the saturable absorber structure. Mode-locking on the second harmonic of the substrate cavity allows a train of 1.1 ps pulses to be generated at a repetition rate of 147 GHz with 40 mW average power.

Gallium-diffused waveguides in sapphire.

The fabrication and characterization of gallium-diffused planar waveguides in sapphire are reported. Waveguides were fabricated by diffusion of 60-200-nm-thick films of gallium oxide into c -cut sapphire at 1600 degrees C for times ranging from 6 to 16 h. Near-field intensity profiles of the guided modes were measured at wavelengths from 488 to 850 nm, and the surface-index elevation was estimated to be up to (0.6+/-0.02)x10(-2) . Potential applications for low-threshold Ti:sapphire waveguide lasers and for optical integrated circuits with passive and active elements in sapphire are discussed.

Terahertz emission by diffusion of carriers and metal-mask dipole inhibition of radiation

Terahertz (THz) radiation can be generated by ultrafast photo-excitation of carriers in a semiconductor partly masked by a gold surface. A simulation of the effect taking into account the diffusion of carriers and the electric field shows that the total net current is approximately zero and cannot account for the THz radiation. Finite element modelling and analytic calculations indicate that the THz emission arises because the metal inhibits the radiation from part of the dipole population, thus creating an asymmetry and therefore a net current. Experimental investigations confirm the simulations and show that metal-mask dipole inhibition can be used to create THz emitters.

Multiple double-metal bias-free terahertz emitters

We demonstrate multiplexed terahertz emitters that exhibits 2 THz bandwidth that do not require an external bias. The emitters operate under uniform illumination eliminating the need for a micro-lens array and are fabricated with periodic Au and Pb structures on GaAs. Terahertz emission originates from the lateral photo-Dember effect and from the different Schottky barrier heights of the chosen metal pair. We characterize the emitters and determine that most terahertz emission at 300 K is due to band-bending due to the Schottky barrier of the metal.

Waveguide mode filters fabricated using laser-induced forward transfer

Titanium in-diffused lithium niobate index-tapered waveguides have been fabricated using laser-induced forward transfer technique for mode-filtering applications. Details of their fabrication, losses and transmission characterization are presented.

Electrically charged dispersions of ferroelectric nanoparticles

It is found that ferroelectric nanoparticles synthesized by the sol-gel technique and milling can become charged during the fabrication. The balance between the concentrations of positively and negatively charged particles depends on the material, the treatment of particles, and concentration of the surfactant agent. It is suggested that the nanoparticles become charged due to their collisions during the milling and sonication.