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Publication
Featured researches published by Geoffrey B. Stephens.
international reliability physics symposium | 1977
David L. Bergeron; Zimri Congdon Putney; P. H. Smith; Geoffrey B. Stephens
A failure mechanism of bipolar lateral PNP transistors in medium voltage integrated circuits has been observed. The failure mechanism is characterized by inversion layer conduction between emitter and collector of the devices resulting from the trapping of hot electrons in the dielectric. A model of the mechanism has been developed which explains the observed temperature and voltage acceleration.
Archive | 1978
George Edward Alcorn; David L. Bergeron; Geoffrey B. Stephens
Archive | 1998
Hayden C. Cranford; Stacy J. Garvin; Geoffrey B. Stephens
Archive | 1981
Hayden C. Cranford; Charles Reeves Hoffman; Geoffrey B. Stephens
Archive | 1977
George Edward Alcorn; Raymond Weaver Hamaker; Geoffrey B. Stephens
Archive | 1994
Geoffrey B. Stephens; Scott J. Tucker
Archive | 1979
George Edward Alcorn; Raymond Weaver Hamaker; Geoffrey B. Stephens
Archive | 1980
David L. Bergeron; Geoffrey B. Stephens
Archive | 1977
David L. Bergeron; Zimri Congdon Putney; Geoffrey B. Stephens
Archive | 1999
Hayden C. Cranford; Geoffrey B. Stephens
