Geoffrey Ryding

Concepts and designs of ion implantation equipment for semiconductor processing

Manufacturing ion implantation equipment for doping semiconductors has grown into a two billion dollar business. The accelerators developed for nuclear physics research and isotope separation provided the technology from which ion implanters have been developed but the unique requirements of the semiconductor industry defined the evolution of the architecture of these small accelerators. Key elements will be described including ion generation and beam transport systems as well as the techniques used to achieve uniform doping over large wafers. The wafers are processed one at a time or in batches and are moved in and out of the vacuum by automated handling systems. The productivity of an implanter is of economic importance and there is continuing need to increase the usable beam current especially at low energies.

SIMOX research, development, and manufacturing

Ibis Technology Corporation, 32A Cherry Hill Dr., Danvers, MA 01923 Research and development on SIMOX silicon-on-insulator material is rapidly increasing due to exciting applications for low power, low voltage, and advanced, high performance circuitry. Consistency in wafer uniformity and interface smoothness, reduction of metallic contamination, and a drive toward lower substrate cost have all contributed to the use of SIMOX as a starting substrate for production devices and circuits. Considerations for new implanter development, product material improvement, and worldwide market expansion are discussed.

Applied Quantum X Implant System: Technology Enhancements to Enable Production‐Worthy Performance at the 45 nm Node

Mechanical scanning of the wafer in 2 dimensions is one approach that has been used to achieve single wafer processing for high current ion implantation. This approach simplifies the beamline design, compared to scanned beam or ribbon beam architectures, but has required a number of new technologies and methods in the scanner hardware and in dosimetry control. The Applied® Quantum X Implant system was designed to incorporate these new technologies, and has achieved the process performance and low energy productivity required for advanced junction formation at the 65 nm technology node. Since its introduction, extensive qualification and development work has been carried out, to extend its capability to the next technology generation. A number of further innovations and improvements to the beamline and platform have been developed, extending its throughput and process control capability to be production‐worthy at 45 nm.This paper will review the process control challenges associated with the 2d mechanical ...