Theodore H. Smick

SIMOX research, development, and manufacturing

Ibis Technology Corporation, 32A Cherry Hill Dr., Danvers, MA 01923 Research and development on SIMOX silicon-on-insulator material is rapidly increasing due to exciting applications for low power, low voltage, and advanced, high performance circuitry. Consistency in wafer uniformity and interface smoothness, reduction of metallic contamination, and a drive toward lower substrate cost have all contributed to the use of SIMOX as a starting substrate for production devices and circuits. Considerations for new implanter development, product material improvement, and worldwide market expansion are discussed.

Applied Quantum X Implant System: Technology Enhancements to Enable Production‐Worthy Performance at the 45 nm Node

Mechanical scanning of the wafer in 2 dimensions is one approach that has been used to achieve single wafer processing for high current ion implantation. This approach simplifies the beamline design, compared to scanned beam or ribbon beam architectures, but has required a number of new technologies and methods in the scanner hardware and in dosimetry control. The Applied® Quantum X Implant system was designed to incorporate these new technologies, and has achieved the process performance and low energy productivity required for advanced junction formation at the 65 nm technology node. Since its introduction, extensive qualification and development work has been carried out, to extend its capability to the next technology generation. A number of further innovations and improvements to the beamline and platform have been developed, extending its throughput and process control capability to be production‐worthy at 45 nm.This paper will review the process control challenges associated with the 2d mechanical ...