George H. Chan

Syntheses, Crystal and Band Structures, and Magnetic and Optical Properties of New CsLnCdTe3 (Ln = La, Pr, Nd, Sm, Gd−Tm, and Lu)

A series of new quaternary semiconductor materials CsLnCdTe(3) (Ln = La, Pr, Nd, Sm, Gd-Tm, and Lu) was obtained from high-temperature solid-state reactions by the reactive halide flux method. These compounds belong to the layered KZrCuS(3) structure type and crystallize in the orthorhombic space group Cmcm (No. 63). Their structure features two-dimensional infinity(2)[LnCdTe(3)-] layers of edge- and vertex-sharing LnTe(6) octahedra with Cd atoms filling the tetrahedral interstices, which stack along b-axis. The Cs atoms are located between the infinity(2)[LnCdTe(3)-] layers and are surrounded by eight Te atoms to form a CsTe(8) bicapped trigonal prism. Such Te layers are more flexible than the Se analogues in the isostructural CsLnMSe(3) to accommodate nearly the entire Ln series. Theoretical studies performed on CsTmCdTe(3) show that the material is a direct band gap semiconductor and agrees with the result from a single-crystal optical absorption measurement. Magnetic susceptibility measurements show that the CsLnCdTe(3) (Ln = Pr, Nd, Gd, Dy, Tm) materials exhibit temperature-dependent paramagnetism and obey the Curie-Weiss law, whereas CsSmCdTe(3) does not.

Syntheses, structures, physical properties, and electronic properties of some AMUQ3 compounds (A = alkali metal, M = Cu or Ag, Q = S or Se).

The seven new isostructural quaternary uranium chalcogenides KCuUS 3, RbCuUS 3, RbAgUS 3, CsCuUS 3, CsAgUS 3, RbAgUSe 3, and CsAgUSe 3 were prepared from solid-state reactions. These isostructural materials crystallize in the layered KZrCuS 3 structure type in the orthorhombic space group Cmcm. The structure is composed of UQ 6 octahedra and MQ 4 tetrahedra that share edges to form (2) infinity[UMQ 3 (-)] layers. These layers stack perpendicular to [010] and are separated by layers of face- and edge-sharing AQ 8 bicapped trigonal prisms. There are no Q-Q bonds in the structure, so the formal oxidation states of A/U/M/Q may be assigned as 1+/4+/1+/2-, respectively. CsCuUS 3 shows semiconducting behavior with thermal activation energy E a = 0.14 eV and sigma 298 = 0.3 S/cm. From single-crystal absorption measurements in the near IR range, the optical band gaps of these compounds are smaller than 0.73 eV. The more diffuse 5f electrons play a much more dominant role in the optical properties of the AMUQ 3 compounds than do the 4f electrons in the AMLnQ 3 compounds (Ln = rare earth). Periodic DFT spin band-structure calculations on CsCuUS 3 and CsAgUS 3 establish two energetically similar antiferromagnetic spin structures and show magnetic interactions within and between the layers of the structure. Density-of-states analysis shows M-Q orbital overlap in the valence band and U-Q orbital overlap in the conduction band.

On the anisotropy of the magnetic properties of CsYbZnSe3.

DC magnetic susceptibility measurements on CsYbZnSe 3 show a broad magnetic transition at approximately 10 K and pronounced differences between zero-field-cooled and field-cooled data that lead to experimental effective magnetic moments of 4.26(5) BM and 4.39(4) BM, respectively. Specific heat measurements confirm that there is neither long-range ordering nor a phase transition between 1.8 and 380 K. First-principles electronic structure calculations with and without inclusion of spin-orbit coupling effects show that the spins of CsYbZnSe 3 prefer to orient along [010] rather than along either [100] or [001] of this orthorhombic material and that the spin exchange between adjacent Yb3+ ions along [100] is substantially antiferromagnetic. The magnetic properties of CsYbZnSe 3 are best described by an Ising uniform antiferromagnetic chain model.

Syntheses, crystal structures, and physical properties of La 5Cu6O4S7 and La5Cu 6.33O4S7

Single crystal and bulk powder samples of the quaternary lanthanum copper oxysulfides La5Cu6.33O4S7 and La5Cu6O4S7 have been prepared by means of high-temperature sealed-tube reactions and spark plasma sintering, respectively. In the structure of La 5Cu6.33O4S7, Cu atoms tie together the fluorite-like (2)infinity[La5O4S(5+)] and antifluorite-like (2) infinity[Cu6S6(5-)] layers of La5Cu6O4S7. The optical band gap, E g, of 2.0 eV was deduced from both diffuse reflectance spectra on a bulk sample of La5Cu6O4S7 and for the (010) crystal face of a La 5Cu6.33O4S7 single crystal. Transport measurements at 298 K on a bulk sample of La 5Cu 6O 4S 7 indicated p-type metallic electrical conduction with sigma electrical =2.18 S cm(-1), whereas measurements on a La 5Cu6.33O4S7 single crystal led to sigma electrical =4.5 10(-3) S cm(-1) along [100] and to semiconducting behavior. In going from La 5Cu6O4S7 to La5Cu6.33O4S7, the disruption of the (2)infinity[Cu6S6(5-)] layer and the decrease in the overall Cu(2+)(3d(9)) concentration lead to a significant decrease in the electrical conductivity.

Syntheses, Crystal Structures, and Physical Properties of La5Cu6O4S7and La5Cu6.33O4S7

Single crystal and bulk powder samples of the quaternary lanthanum copper oxysulfides La5Cu6.33O4S7 and La5Cu6O4S7 have been prepared by means of high-temperature sealed-tube reactions and spark plasma sintering, respectively. In the structure of La 5Cu6.33O4S7, Cu atoms tie together the fluorite-like (2)infinity[La5O4S(5+)] and antifluorite-like (2) infinity[Cu6S6(5-)] layers of La5Cu6O4S7. The optical band gap, E g, of 2.0 eV was deduced from both diffuse reflectance spectra on a bulk sample of La5Cu6O4S7 and for the (010) crystal face of a La 5Cu6.33O4S7 single crystal. Transport measurements at 298 K on a bulk sample of La 5Cu 6O 4S 7 indicated p-type metallic electrical conduction with sigma electrical =2.18 S cm(-1), whereas measurements on a La 5Cu6.33O4S7 single crystal led to sigma electrical =4.5 10(-3) S cm(-1) along [100] and to semiconducting behavior. In going from La 5Cu6O4S7 to La5Cu6.33O4S7, the disruption of the (2)infinity[Cu6S6(5-)] layer and the decrease in the overall Cu(2+)(3d(9)) concentration lead to a significant decrease in the electrical conductivity.

Syntheses, crystal structures, and physical properties of La 5 Cu 6 O 4 S 7 and La 5 Cu 6.33 O 4 S 7

Single crystal and bulk powder samples of the quaternary lanthanum copper oxysulfides La5Cu6.33O4S7 and La5Cu6O4S7 have been prepared by means of high-temperature sealed-tube reactions and spark plasma sintering, respectively. In the structure of La 5Cu6.33O4S7, Cu atoms tie together the fluorite-like (2)infinity[La5O4S(5+)] and antifluorite-like (2) infinity[Cu6S6(5-)] layers of La5Cu6O4S7. The optical band gap, E g, of 2.0 eV was deduced from both diffuse reflectance spectra on a bulk sample of La5Cu6O4S7 and for the (010) crystal face of a La 5Cu6.33O4S7 single crystal. Transport measurements at 298 K on a bulk sample of La 5Cu 6O 4S 7 indicated p-type metallic electrical conduction with sigma electrical =2.18 S cm(-1), whereas measurements on a La 5Cu6.33O4S7 single crystal led to sigma electrical =4.5 10(-3) S cm(-1) along [100] and to semiconducting behavior. In going from La 5Cu6O4S7 to La5Cu6.33O4S7, the disruption of the (2)infinity[Cu6S6(5-)] layer and the decrease in the overall Cu(2+)(3d(9)) concentration lead to a significant decrease in the electrical conductivity.