Georgi Diankov

Simultaneous Nitrogen Doping and Reduction of Graphene Oxide

We developed a simple chemical method to obtain bulk quantities of N-doped, reduced graphene oxide (GO) sheets through thermal annealing of GO in ammonia. X-ray photoelectron spectroscopy (XPS) study of GO sheets annealed at various reaction temperatures reveals that N-doping occurs at a temperature as low as 300 degrees C, while the highest doping level of approximately 5% N is achieved at 500 degrees C. N-doping is accompanied by the reduction of GO with decreases in oxygen levels from approximately 28% in as-made GO down to approximately 2% in 1100 degrees C NH(3) reacted GO. XPS analysis of the N binding configurations of doped GO finds pyridinic N in the doped samples, with increased quaternary N (N that replaced the carbon atoms in the graphene plane) in GO annealed at higher temperatures (> or = 900 degrees C). Oxygen groups in GO were found responsible for reactions with NH(3) and C-N bond formation. Prereduced GO with fewer oxygen groups by thermal annealing in H(2) exhibits greatly reduced reactivity with NH(3) and a lower N-doping level. Electrical measurements of individual GO sheet devices demonstrate that GO annealed in NH(3) exhibits higher conductivity than those annealed in H(2), suggesting more effective reduction of GO by annealing in NH(3) than in H(2), consistent with XPS data. The N-doped reduced GO shows clearly n-type electron doping behavior with the Dirac point (DP) at negative gate voltages in three terminal devices. Our method could lead to the synthesis of bulk amounts of N-doped, reduced GO sheets useful for various practical applications.

Facile synthesis of high-quality graphene nanoribbons

Graphene nanoribbons have attracted attention because of their novel electronic and spin transport properties, and also because nanoribbons less than 10 nm wide have a bandgap that can be used to make field-effect transistors. However, producing nanoribbons of very high quality, or in high volumes, remains a challenge. Here, we show that pristine few-layer nanoribbons can be produced by unzipping mildly gas-phase oxidized multiwalled carbon nanotubes using mechanical sonication in an organic solvent. The nanoribbons are of very high quality, with smooth edges (as seen by high-resolution transmission electron microscopy), low ratios of disorder to graphitic Raman bands, and the highest electrical conductance and mobility reported so far (up to 5e(2)/h and 1,500 cm(2) V(-1) s(-1) for ribbons 10-20 nm in width). Furthermore, at low temperatures, the nanoribbons show phase-coherent transport and Fabry-Perot interference, suggesting minimal defects and edge roughness. The yield of nanoribbons is approximately 2% of the starting raw nanotube soot material, significantly higher than previous methods capable of producing high-quality narrow nanoribbons. The relatively high-yield synthesis of pristine graphene nanoribbons will make these materials easily accessible for a wide range of fundamental and practical applications.

Nanocrystal Growth on Graphene with Various Degrees of Oxidation

We show a general two-step method for growing hydroxide and oxide nanocrystals of the iron family elements (Ni, Co, Fe) on graphene with two degrees of oxidation. Drastically different nanocrystal growth behaviors were observed on low-oxidation graphene sheets (GS) and highly oxidized graphite oxide (GO) in hydrothermal reactions. Small particles precoated on GS with few oxygen-containing surface groups diffused and recrystallized into single-crystalline Ni(OH)(2) hexagonal nanoplates or Fe(2)O(3) nanorods with well-defined morphologies. In contrast, particles precoated on GO were pinned by the high-concentration oxygen groups and defects on GO without recrystallization into well-defined shapes. Adjusting the reaction temperature can be included to further control materials grown on graphene. For materials with weak interactions with graphene, increasing the reaction temperature can lead to diffusion and recrystallization of surface species into larger crystals, even on highly oxidized and defective GO. Our results suggest an interesting new approach for controlling the morphology of nanomaterials grown on graphene by tuning the surface chemistry of graphene substrates used for crystal nucleation and growth.

Extreme monolayer-selectivity of hydrogen-plasma reactions with graphene.

We study the effect of remote hydrogen plasma on graphene deposited on SiO₂. We observe strong monolayer selectivity for reactions with plasma species, characterized by isotropic hole formation in the basal plane of monolayers and etching from the sheet edges. The areal density of etch pits on monolayers is 2 orders of magnitude higher than on bilayers or thicker sheets. For bilayer or thicker sheets, the etch pit morphology is also quite different: hexagonal etch pits of uniform size, indicating that etching is highly anisotropic and proceeds from pre-existing defects rather than nucleating continuously as on monolayers. The etch rate displays a pronounced dependence on sample temperature for monolayer and multilayer graphene alike: very slow at room temperature, peaking at 400 °C and suppressed entirely at 700 °C. Applying the same hydrogen plasma treatment to graphene deposited on the much smoother substrate mica leads to very similar phenomenology as on the rougher SiO₂, suggesting that a factor other than substrate roughness controls the reactivity of monolayer graphene with hydrogen plasma species.

An integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements.

We have developed a highly sensitive integrated capacitance bridge for quantum capacitance measurements. Our bridge, based on a GaAs HEMT amplifier, delivers attofarad (aF) resolution using a small AC excitation at or below k(B)T over a broad temperature range (4-300 K). We have achieved a resolution at room temperature of 60 aF/√Hz for a 10  mV ac excitation at 17.5 kHz, with an improved resolution at cryogenic temperatures, for the same excitation amplitude. We demonstrate the utility of our bridge for measuring the quantum capacitance of nanostructures by measuring the capacitance of top-gated graphene devices and cleanly resolving the density of states.

Robust fractional quantum Hall effect in the N =2 Landau level in bilayer graphene

The fractional quantum Hall effect is a canonical example of electron–electron interactions producing new ground states in many-body systems. Most fractional quantum Hall studies have focussed on the lowest Landau level, whose fractional states are successfully explained by the composite fermion model. In the widely studied GaAs-based system, the composite fermion picture is thought to become unstable for the N≥2 Landau level, where competing many-body phases have been observed. Here we report magneto-resistance measurements of fractional quantum Hall states in the N=2 Landau level (filling factors 4<|ν|<8) in bilayer graphene. In contrast with recent observations of particle–hole asymmetry in the N=0/N=1 Landau levels of bilayer graphene, the fractional quantum Hall states we observe in the N=2 Landau level obey particle–hole symmetry within the fully symmetry-broken Landau level. Possible alternative ground states other than the composite fermions are discussed.

Unconventional Correlation between Quantum Hall Transport Quantization and Bulk State Filling in Gated Graphene Devices

We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the quantum Hall regime in gated graphene devices. Surprisingly, a comparison of these measurements reveals that quantized transport typically occurs below the complete filling of bulk Landau levels, when the bulk is still conductive. This result points to a revised understanding of transport quantization when carriers are accumulated by gating. We discuss the implications on transport study of the quantum Hall effect in graphene and related topological states in other two-dimensional electron systems.

Erratum: “An integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements” [Rev. Sci. Instrum. 82, 053904 (2011)]

Arash Hazeghi, Joseph A. Sulpizio, Georgi Diankov, David Goldhaber-Gordon, and H. S. Philip Wong Citation: Rev. Sci. Instrum. 82, 129901 (2011); doi: 10.1063/1.3665097 View online: http://dx.doi.org/10.1063/1.3665097 View Table of Contents: http://rsi.aip.org/resource/1/RSINAK/v82/i12 Published by the AIP Publishing LLC.