Gi-Chung Kwon

Simple microwave preionization source for ohmic plasmas

A simple economical 2.45 GHz microwave system has been developed and utilized for preionization on the Korea Advanced Institute of Science and Technology (KAIST)-TOKAMAK. The magnetron microwave source was obtained from a widely used, household microwave oven. Since ac operation of the magnetron is not suitable for tokamak application, the magnetron cathode bias circuit was modified to obtain continuous and stable operation of the magnetron for several hundred milliseconds. Application of the developed microwave system to KAIST-TOKAMAK resulted in a reduction of ohmic flux consumption.

Influence of Crystalline Si Solar Cell by Rie Surface Texturing

We fabricated a plasma texturing for multi-crystalline silicon cells using reactive ion etching (RIE). Multi-crystalline Si cells have not benefited from the cost-effective wet-chemical texturing processes that reduce front surface reflectance on single-crystal wafers. Elimination of plasma damage has been achieved while keeping front reflectance to extremely low levels. We will discuss reflectance, quantum efficiency and conversion efficiency for multi-crystalline Si solar cell by each RIE process conditions.

Study of Low Reflectance and RF Frequency by Rie Surface Texture Process in Multi Crystall Silicon Solar Cells

Conventional surface texturing in crystalline silicon solar cell have been use wet texturing by Alkali or Acid solution. But conventional wet texturing has the serious issue of wafer breakage by large consumption of wafer in wet solution and can not obtain the reflectance below 10% in multi crystalline silicon. Therefore it is focusing on RIE texturing, one method of dry etching. We developed large scale plasma RIE (Reactive Ion Etching) equipment which can accommodate 144 wafers (125 mm) in tray in order to provide surface texturing on the silicon wafer surface. Reflectance was controllable from 3% to 20% in crystalline silicon depending on the texture shape and height. We have achieved excellent reflectance below 4% on the weighted average (300~1,100 nm) in multi crystalline silicon using plasma texturing with gas mixture ratio such as , , and . The texture shape and height on the silicon wafer surface have an effect on gas chemistry, etching time, RF frequency, and so on. Excellent conversion efficiency of 16.1% is obtained in multi crystalline silicon by RIE process. In order to know the influence of RF frequency with 2 MHz and 13.56 MHz, texturing shape and conversion efficiency are compared and discussed mutually using RIE technology.

Plasma Position Measurements in a Tokamak with an Iron Core Transformer

Two simple methods of estimating the plasma position in a large-aspect-ratio, low-βp tokamak with an iron core transformer are demonstrated: a magnetic diagnostic method and an optical method. The magnetic diagnostic method utilizes an array of magnetic pickup coils to measure the poloidal magnetic field produced by the plasma current. To include the effects of toroidicity and an iron core transformer, the correction factor was calculated with the magnetic material (or iron core) inside the calculation domain and incorporated in the analysis. The evolution of horizontal and vertical displacement of the plasma center obtained in this way is used to control the KAIST-Tokamak plasmas. To compare the plasma position estimated using the magnetic pickup coils, a simple optical method is also demonstrated on KAIST-TOKAMAK using a composite video signal from a charge-coupled device (CCD) camera. The two results are in good agreement.

Incident Angle Dependence of Quantum Efficiency in c-Si Solar Cell or a-Si Thin Film Solar Cell in BIPV System

The conversion efficiency of solar cells depending on incident angle of light is important for building-integrated photovoltaics (BIPV) applications. The quantum efficiency is the ratio of the number of charge carriers collected by the solar cell to the number of photons of a given energy shining on the solar cell. The analysis of angle dependence of quantum efficiencies give more information upon the variation of power output of a solar cell by the incident angle of light. The variations in power output of solar cells with increasing angle of incidence is different for the type of cell structures. In this study we present the results of the quantum efficiency measurement of single-crystalline silicon solar cells and a-Si:H thin-film solar cells with the angle of incidence of light. As a result, as the angle of incidence increases in single-crystalline silicon solar cells, quantum efficiency at all wavelength (300~1,100 nm) of light were reduced. But in case of a-Si:H thin-film solar cells, quantum efficiency was increased or maintained at the angle of incidence from 0 degree to about 40 degrees and dramatically decrease at more than 40 degrees in the range of visible light. This results of quantum efficiency with increasing incident angle were caused by haze and interference effects in thin-film structure. Thus, the structural optimization considering incident angle dependence of solar cells is expected to benefit BIPV.건재 일체형 태양광발전(BIPV) 응용을 위해 광 입사각에 따른 태양전지의 변환 효율은 중요하다. 양자효율은 태양전지의 파장별 전자 수집효율을 말하며, 입사각별 양자효율 측정으로 입사각에 따른 태양전지 출력 변화 요인을 분석할 수 있다. 이러한 입사각별 양자효율은 태양전지 종류에 따라 차이를 보인다. 본 연구에서는 가장 많이 쓰이는 벌크형 단결정 실리콘 태양전지와 박막형 비정질 실리콘 태양전지의 입사각별 양자효율을 비교하였다. 그 결과, 단결정 실리콘 태양전지에서는 광 입사각이 증가함에 따라 전 파장영역에서 양자효율이 감소했다. 반면, 비정질 박막 실리콘 태양전지에서는 단파장 영역에서는 결정질 실리콘과 동일하게 감소하였으나, 그 이후의 흡수 영역에서 약 40o의 입사각까지 증가 또는 일정한 양자효율을 보이다가 이후에 급격히 감소하는 결과를 얻었다. 이는 비정질 박막 실리콘 태양전지에서 입사각이 증가함에 따라 특정 파장 영역에서 산란과 박막 구조의 영향으로 예상된다. 따라서, 태양전지의 구조 및 광학 구조 최적화 등으로 BIPV 적용에 유리한 구조 태양전지 제작이 가능할 것으로 보인다.

Study on Electron Temperature Diagnostic and the ITO Thin Film Characteristics of the Plasma Emission Intensity by the Oxygen Gas Flow

The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.

Study of the Diffusion of Phosphorus Dependent on Temperatures for Selective Emitter Doping Process of Atmospheric Pressure Plasma

Kwangwoon University of Department of Chemistry, Seoul, Korea(Received October 8, 2014 ; revised October 22, 2014 ; accepted October 23, 2014)Abstract In this study, we propose the application of doping process technology for atmospheric pressure plasma.The plasma treatment means the wafer is warmed via resistance heating from current paths. These pathsare induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Fur-thermore, it is investigated on the high-concentration doping to a selective partial region in P type solarcell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasmatreatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) imagesare analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrationsare also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process,as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper,so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inverselyproportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomeshigher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on thetemperature of wafers.