Giancarlo Trimarchi

Construction and solution of a Wannier-functions based Hamiltonian in the pseudopotential plane-wave framework for strongly correlated materials

Ab initio determination of model Hamiltonian parameters for strongly correlated materials is a key issue in applying many-particle theoretical tools to real narrow-band materials. We propose a selfcontained calculation scheme to construct, with an ab initio approach, and solve such a Hamiltonian. The scheme uses a Wannier-function-basis set, with the Coulomb interaction parameter U obtained specifically for theseWannier functions via constrained Density functional theory (DFT) calculations. The Hamiltonian is solved by Dynamical Mean-Field Theory (DMFT) with the effective impurity problem treated by the Quantum Monte Carlo (QMC) method. Our scheme is based on the pseudopotential plane-wave method, which makes it suitable for developments addressing the challenging problem of crystal structural relaxations and transformations due to correlation effects. We have applied our scheme to the “charge transfer insulator” material nickel oxide and demonstrate a good agreement with the experimental photoemission spectra.

Structure prediction and targeted synthesis: a new NanN2 diazenide crystalline structure

Significant progress in theoretical and computational techniques for predicting stable crystal structures has recently begun to stimulate targeted synthesis of such predicted structures. Using a global space-group optimization (GSGO) approach that locates ground-state structures and stable stoichiometries from first-principles energy functionals by objectively starting from randomly selected lattice vectors and random atomic positions, we predict the first alkali diazenide compound Na(n)N(2), manifesting homopolar N-N bonds. The previously predicted Na(3)N structure manifests only heteropolar Na-N bonds and has positive formation enthalpy. It was calculated based on local Hartree-Fock relaxation of a fixed-structure type (Li(3)P-type) found by searching an electrostatic point-ion model. Synthesis attempts of this positive ΔH compound using activated nitrogen yielded another structure (anti-ReO(3)-type). The currently predicted (negative formation enthalpy) diazenide Na(2)N(2) completes the series of previously known BaN(2) and SrN(2) diazenides where the metal sublattice transfers charge into the empty N(2) Π(g) orbital. This points to a new class of alkali nitrides with fundamentally different bonding, i.e., homopolar rather than heteropolar bonds and, at the same time, illustrates some of the crucial subtleties and pitfalls involved in structure predictions versus planned synthesis. Attempts at synthesis of the stable Na(2)N(2) predicted here will be interesting.

LDA+DMFT implemented with the pseudopotential plane-wave approach

We present a joint implementation of dynamical-mean-field theory (DMFT) with the pseudopotential plane-wave approach, via Wannier functions, for the determination of the electronic properties of strongly correlated materials. The scheme uses, as input for the DMFT calculations, a tight-binding Hamiltonian obtained from the plane-wave calculations by projection onto atomic-centered symmetry-constrained Wannier functions for the correlated orbitals. We apply this scheme to two prototype systems: a paramagnetic correlated metal, SrVO3, and a paramagnetic correlated system, V2O3, which exhibits a metal–insulator transition. Comparisons with available linear-muffin-tin-orbital (LMTO) plus DMFT calculations demonstrate the suitability of the joint DMFT pseudopotential plane-wave approach to describe the electronic properties of strongly correlated materials. This opens the way to future developments using the pseudopotential plane-wave DMFT approach to address total-energy properties, such as structural properties.

CaFe4As3: A Metallic Iron Arsenide with Anisotropic Magnetic and Charge-Transport Properties

The iron arsenide CaFe(4)As(3) features a three-dimensional network derived from intergrown Fe(2)As(2) layers and Ca ions in channels. Complex magnetic interactions between Fe atoms give rise to unexpected transitions and novel direction-dependent magnetic behavior.

Defect Antiperovskite Compounds Hg3Q2I2 (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

The high Z chalcohalides Hg3Q2I2 (Q = S, Se, and Te) can be regarded as of antiperovskite structure with ordered vacancies and are demonstrated to be very promising candidates for X- and γ-ray semiconductor detectors. Depending on Q, the ordering of the Hg vacancies in these defect antiperovskites varies and yields a rich family of distinct crystal structures ranging from zero-dimensional to three-dimensional, with a dramatic effect on the properties of each compound. All three Hg3Q2I2 compounds show very suitable optical, electrical, and good mechanical properties required for radiation detection at room temperature. These compounds possess a high density (>7 g/cm3) and wide bandgaps (>1.9 eV), showing great stopping power for hard radiation and high intrinsic electrical resistivity, over 1011 Ω cm. Large single crystals are grown using the vapor transport method, and each material shows excellent photo sensitivity under energetic photons. Detectors made from thin Hg3Q2I2 crystals show reasonable response under a series of radiation sources, including 241Am and 57Co radiation. The dimensionality of Hg-Q motifs (in terms of ordering patterns of Hg vacancies) has a strong influence on the conduction band structure, which gives the quasi one-dimensional Hg3Se2I2 a more prominently dispersive conduction band structure and leads to a low electron effective mass (0.20 m0). For Hg3Se2I2 detectors, spectroscopic resolution is achieved for both 241Am α particles (5.49 MeV) and 241Am γ-rays (59.5 keV), with full widths at half-maximum (FWHM, in percentage) of 19% and 50%, respectively. The carrier mobility-lifetime μτ product for Hg3Q2I2 detectors is achieved as 10-5-10-6 cm2/V. The electron mobility for Hg3Se2I2 is estimated as 104 ± 12 cm2/(V·s). On the basis of these results, Hg3Se2I2 is the most promising for room-temperature radiation detection.

KAg11(VO4)4 as a candidate p-type transparent conducting oxide

For a material to be a good p-type transparent conducting oxide (TCO), it must simultaneously satisfy several design principles regarding its bulk and defect phase thermochemistry, its optical absorption spectrum, and its electric transport properties. Recently, we predicted Ag3VO4 to be p-type but with low conductivity and an optical band gap not large enough for transparency. To improve on the transport and optical properties of Ag3VO4, we searched an extended material space including quaternary compounds based on Ag, V, O, and an additional atom for a new candidate p-type TCO. From this set of quaternary materials, we selected KAg11(VO4)4, a known oxide with a crystal structure related to that of Ag3VO4. Notably, one could expect a possible enhancement of the concentration of hole producing Ag-vacancy defects in KAg11(VO4)4 due to its different local geometries of Ag atoms (2- and 3-fold coordinated) with respect to the 4-fold coordinated Ag atoms in Ag3VO4. By performing first-principles calculations, we found that KAg11(VO4)4 is an intrinsic p-type conductor and can be synthesized under conditions similar to those predicted for the synthesis of Ag3VO4. However, we predict that the intrinsic hole content in KAg11(VO4)4 is similar to that in Ag3VO4 even though KAg11(VO4)4 contains 2- and 3-fold coordinated Ag, hole producing sites with a lower defect formation energy than the 4-fold coordinated one. Our calculation demonstrates that the advantage from lower coordination number of the Ag atom in KAg11(VO4)4 can be offset by the change in the range of Ag chemical potential in which synthesis is allowed due to the oxide phases that Ag forms with K and that energetically compete with KAg11(VO4)4.

Charge Density Wave in the New Polymorphs of RE2Ru3Ge5 (RE = Pr, Sm, Dy)

A new polymorph of the RE2Ru3Ge5 (RE = Pr, Sm, Dy) compounds has been grown as single crystals via an indium flux. These compounds crystallize in tetragonal space group P4/mnc with the Sc2Fe3Si5-type structure, having lattice parameters a = 11.020(2) Å and c = 5.853(1) Å for RE = Pr, a = 10.982(2) Å and c = 5.777(1) Å for RE = Sm, and a = 10.927(2) Å and c = 5.697(1) Å for RE = Dy. These materials exhibit a structural transition at low temperature, which is attributed to an apparent charge density wave (CDW). Both the high-temperature average crystal structure and the low-temperature incommensurately modulated crystal structure (for Sm2Ru3Ge5 as a representative) have been solved. The charge density wave order is manifested by periodic distortions of the one-dimensional zigzag Ge chains. From X-ray diffraction, charge transport (electrical resistivity, Hall effect, magnetoresistance), magnetic measurements, and heat capacity, the ordering temperatures (TCDW) observed in the Pr and Sm analogues are ∼200 and ∼175 K, respectively. The charge transport measurement results indicate an electronic state transition happening simultaneously with the CDW transition. X-ray absorption near-edge spectroscopy (XANES) and electronic band structure results are also reported.

Prediction and Synthesis of Strain Tolerant RbCuTe Crystals Based on Rotation of One-Dimensional Nano Ribbons within a Three-Dimensional Inorganic Network

A unique possibility for a simple strain tolerant inorganic solid is envisioned whereby a set of isolated, one-dimensional (1D) nano objects are embedded in an elastically soft three-dimensional (3D) atomic matrix thus forming an interdimensional hybrid structure (IDHS). We predict theoretically that the concerted rotation of 1D nano objects could allow such IDHSs to tolerate large strain values with impunity. Searching theoretically among the 1:1:1 ABX compounds of I-I-VI composition, we identified, via first-principles thermodynamic theory, RbCuTe, which is a previously unreported but now predicted-to-be-stable compound in the MgSrSi-type structure, in space group Pnma. The predicted structure of RbCuTe consists of ribbons of copper and telluride atoms placed antipolar to one another throughout the lattice with rubidium atoms acting as a matrix. A novel synthetic adaptation utilizing liquid rubidium and vacuum annealing of the mixed elemental reagents in fused silica tubes as well as in situ (performed at the Advanced Photon Source) and ex situ structure determination confirmed the stability and predicted structure of RbCuTe. First-principles calculations then showed that the application of up to ∼30% uniaxial strain on the ground-state structure result in a buildup of internal stress not exceeding 0.5 GPa. The increase in total energy is 15-fold smaller than what is obtained for the same RbCuTe material but in structures having a contiguous set of 3D chemical bonds spanning the entire crystal. Furthermore, electronic structure calculations revealed that the HOMO is a 1D energy band localized on the CuTe ribbons and that the 1D insulating band structure is also resilient to such large strains. This combined theory and experiment study reveals a new type of strain tolerant inorganic material.

Magnetization of ternary alloys based on Fe0.65Ni0.35 invar with 3d transition metal additions: An ab initio study

Smart susceptors are being developed for use as tooling surfaces in molding machines that use apply electro-magnetic induction heating to mold and form plastics or metal powders into structural parts, e.g., on aerospace and automotive manufacturing lines. The optimal magnetic materials for the induction heating process should have large magnetization, high magnetic permeability, but also small thermal expansion coefficient. The Fe0.65Ni0.35 invar alloy with its negligible thermal expansion coefficient is thus a natural choice for this application. Here, we use density functional theory as implemented through the Korringa-Kohn-Rostoker method within the coherent-potential approximation, to design new alloys with the large magnetization desired for smart susceptor applications. We consider the Fe0.65–xNi0.35–yMx+y alloys derived from Fe0.65Ni0.35 invar adding a third element M = Sc, Ti, V, Cr, Mn, or Co with concentration (x + y) reaching up to 5 at. %. We find that the total magnetization depends linearly ...

Selective Crystal Growth and Structural, Optical, and Electronic Studies of Mn3Ta2O8

Mn3Ta2O8, a stable targeted material with an unusual and complex cation topology in the complicated Mn-Ta-O phase space, has been grown as a ≈3-cm-long single crystal via the optical floating-zone technique. Single-crystal absorbance studies determine the band gap as 1.89 eV, which agrees with the value obtained from density functional theory electronic-band-structure calculations. The valence band consists of the hybridized Mn d-O p states, whereas the bottom of the conduction band is formed by the Ta d states. Furthermore, out of the three crystallographically distinct Mn atoms that are four-, seven-, or eight-coordinate, only the former two contribute their states near the top of the valence band and hence govern the electronic transitions across the band gap.