Giovanni Scuri

Probing dark excitons in atomically thin semiconductors via near-field coupling to surface plasmon polaritons

Transition metal dichalcogenide (TMD) monolayers with a direct bandgap feature tightly bound excitons, strong spin-orbit coupling and spin-valley degrees of freedom. Depending on the spin configuration of the electron-hole pairs, intra-valley excitons of TMD monolayers can be either optically bright or dark. Dark excitons involve nominally spin-forbidden optical transitions with a zero in-plane transition dipole moment, making their detection with conventional far-field optical techniques challenging. Here, we introduce a method for probing the optical properties of two-dimensional materials via near-field coupling to surface plasmon polaritons (SPPs). This coupling selectively enhances optical transitions with dipole moments normal to the two-dimensional plane, enabling direct detection of dark excitons in TMD monolayers. When a WSe2 monolayer is placed on top of a single-crystal silver film, its emission into near-field-coupled SPPs displays new spectral features whose energies and dipole orientations are consistent with dark neutral and charged excitons. The SPP-based near-field spectroscopy significantly improves experimental capabilities for probing and manipulating exciton dynamics of atomically thin materials, thus opening up new avenues for realizing active metasurfaces and robust optoelectronic systems, with potential applications in information processing and communication.

Single Electron Transistor with Single Aromatic Ring Molecule Covalently Connected to Graphene Nanogaps

We report a robust approach to fabricate single-molecule transistors with covalent electrode-molecule-electrode chemical bonds, ultrashort (∼1 nm) molecular channels, and high coupling yield. We obtain nanometer-scale gaps from feedback-controlled electroburning of graphene constrictions and bridge these gaps with molecules using reaction chemistry on the oxidized graphene edges. Using these nanogaps, we are able to optimize the coupling chemistry to achieve high reconnection yield with ultrashort covalent single-molecule bridges. The length of the molecule is found to influence the fraction of covalently reconnected nanogaps. Finally, we discuss the tunneling nature of the covalent contacts using gate-dependent transport measurements, where we observe single electron transport via large energy Coulomb blockade even at room temperature. This study charts a clear path toward the assembling of ultraminiaturized electronics, sensors, and switches.

Electrical control of charged carriers and excitons in atomically thin materials

Electrical confinement and manipulation of charge carriers in semiconducting nanostructures are essential for realizing functional quantum electronic devices1–3. The unique band structure4–7 of atomically thin transition metal dichalcogenides (TMDs) offers a new route towards realizing novel 2D quantum electronic devices, such as valleytronic devices and valley–spin qubits8. 2D TMDs also provide a platform for novel quantum optoelectronic devices9–11 due to their large exciton binding energy12,13. However, controlled confinement and manipulation of electronic and excitonic excitations in TMD nanostructures have been technically challenging due to the prevailing disorder in the material, preventing accurate experimental control of local confinement and tunnel couplings14–16. Here we demonstrate a novel method for creating high-quality heterostructures composed of atomically thin materials that allows for efficient electrical control of excitations. Specifically, we demonstrate quantum transport in the gate-defined, quantum-confined region, observing spin–valley locked quantized conductance in quantum point contacts. We also realize gate-controlled Coulomb blockade associated with confinement of electrons and demonstrate electrical control over charged excitons with tunable local confinement potentials and tunnel couplings. Our work provides a basis for novel quantum opto-electronic devices based on manipulation of charged carriers and excitons.Formation of a homogeneous two-dimensional electron gas in transition metal dichalcogenide heterostructures allows for efficient electrical control of charge carriers and excitons.