Giuseppe Triggiani

Development of double side readout silicon strip detectors

Abstract Results of tests performed on a series of prototype silicon detectors with double side readout are presented. Electrical characteristics and particle data analysis indicate that these detectors can be operated in capacitive charge division with good spatial resolution on two orthogonal coordinates.

DOUBLE-SIDED SILICON STRIP DETECTORS IN PISA

In the last years several hundreds of large (∼25 cm2) double-sided silicon strip detectors have been designed and tested in our Pisa-INFN laboratory. These detectors are currently used in ALEPH and L3 vertices, and in other field of applications as well. We present the tests performed on a single detector, and we discuss some results on the test structures inserted in each wafer in order to measure the relevant, process-dependent, quantities which determine the detector performances.

Aortic banding and endovascular aneurysm repair in a case of juxtarenal aortic aneurysm with unsuitable infrarenal neck

The proximal aortic neck is one of the limiting factors for endovascular aneurysm repair (EVAR) and represents a crucial factor for success or failure of the procedure. In contrast to open surgery, where a clamp can be placed suprarenally but the repair performed infrarenally, EVAR requires a good infrarenal neck for durable fixation and seal. In a high-risk surgical 79-year-old patient with juxtarenal aortic aneurysm with unsuitable infrarenal neck, a hybrid procedure was chosen: juxtarenal aortic banding and EVAR. The banding allowed a successful EVAR by reshaping the juxtarenal aneurysmal aortic segment, hence converting a previously untreatable anatomy into a treatable one.

Results on double-sided d.c.-coupled silicon strip detectors irradiated with photons up to 1 Mrad

SummaryWe irradiated with photons from a60Co source a double-sided d.c.-coupled silicon strip detector and several test structures fabricated at CSEM. We measured the leakage currents and the interstrip and backside capacitances. Up to a maximum dose of 1 Mrad, the current densities are always below 350 nA/cm2, mostly due to thermally generated surface currents. The interstrip capacitances increase at most 17% with respect to not irradiated detectors, while the backside capacitances do not change.