Marcello Giorgi

DOUBLE-SIDED SILICON STRIP DETECTORS IN PISA

In the last years several hundreds of large (∼25 cm2) double-sided silicon strip detectors have been designed and tested in our Pisa-INFN laboratory. These detectors are currently used in ALEPH and L3 vertices, and in other field of applications as well. We present the tests performed on a single detector, and we discuss some results on the test structures inserted in each wafer in order to measure the relevant, process-dependent, quantities which determine the detector performances.

Results on double-sided d.c.-coupled silicon strip detectors irradiated with photons up to 1 Mrad

SummaryWe irradiated with photons from a60Co source a double-sided d.c.-coupled silicon strip detector and several test structures fabricated at CSEM. We measured the leakage currents and the interstrip and backside capacitances. Up to a maximum dose of 1 Mrad, the current densities are always below 350 nA/cm2, mostly due to thermally generated surface currents. The interstrip capacitances increase at most 17% with respect to not irradiated detectors, while the backside capacitances do not change.

Thin pixel development for the Layer0 of the SuperB Silicon Vertex Tracker

The SuperB asymmetric e⁺ e⁻ collider has been designed to deliver a luminosity greater than 10³⁶ cm⁻² s⁻¹ maintaining moderate beam currents. Comparing to current B-Factories, the reduced center-of-mass boost of the SuperB machine requires an improved vertex resolution to allow precision measurements sensitive to New Physics. Therefore the SuperB Silicon Vertex Tracker will be equipped with an innermost Layer0 with a radius of about 1.5 cm, high granularity, low material budget and able to withstand a background rate of several MHz/cm². We report on the status of the R&D on the different options under study for the Layer0: DNW MAPS, hybrid pixels and thin pixels developed with vertical integration technology.

The future of super Flavor Factories

The status of the flavor physics is presented: the experimental achievements, the outstanding success of the CKM picture within the Standard Model and the flavor experiments presently running and in preparation. From now on the exploration beyond the Standard Model needs a global approach where single measurements coming from individual ad hoc experiments and a more wide set of results expected from multipurpose detectors running at the future Flavor Factories could add value complementary to the direct investigation at LHC. The perspective of the Flavor Factories of next generation, that are expected to be built and running within the next decade, is discussed, with a focus on the technical specific aspects of each individual project.

Monolithic Active Pixel Sensors in a 130 nm Triple Well CMOS Technology

The attention of several groups in the particle physics community has been drawn to monolithic active pixel sensors (MAPS) in CMOS technology as promising candidates for charge particle tracking at the future high luminosity colliders. Their working principle, based on the diffusion of minority carriers in a lightly doped, thin epitaxial layer, might be exploited in the fabrication of highly granular, light detectors possibly satisfying the resolution constraints set by next generation experiments at the International Linear Collider and at the Super B-Factory [1].