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Featured researches published by Gopa Sen.


Journal of Semiconductors | 2018

Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode

Swagata Dey; Vedatrayee Chakraborty; Bratati Mukhopadhyay; Gopa Sen

The double barrier quantum well (DBQW) resonant tunneling diode (RTD) structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge1−zCz on Si1−x−yGexSny heterostructure provides a direct band gap type I configuration. The transmission coefficient and tunneling current density have been calculated considering single and multiple quantum wells. A comparative study of tunnelling current of the proposed structure is done with the existing RTD structure based on GeSn/SiGeSn DBH. A higher value of the current density for the proposed structure has been obtained.


international conference on emerging trends in electronic and photonic devices & systems | 2009

Prediction of band offsets of the ternary alloy Si 1-x-y Sn x C y on Si

Gopa Sen; Bratati Mukhopadhyay; P. K. Basu

The band offsets and band gap for strained Si<inf>1-x-y</inf>Sn<inf>x</inf>C<inf>y</inf> layers grown on Si substrate are estimated. The hydrostatic strain, the uniaxial strain and the intrinsic alloy effect are considered separately. The model is verified with the available bandgap energy of binary material.


Development Growth & Differentiation | 1975

IN VITRO EFFECT OF HORMONES ON THE BARK OF PLUMERIA RUBRA LINN. VAR. ACTUIFOLIA BAILEY

Chhanda Bhaumik; Gopa Sen; P. C. Datta

Young bark (with cambium) of Plumeria rubra Linn. var. acutifolia Bailey was cultured in solid media (i) without hormone, (ii) Kinetin (K), (iii) with GA3 and (iv) with IAA at concentrations of 0.05, 0.10, 0.15 and 0.20 mg per litre. The nutrients of the media were fed laterally through the cambium zone. The amount of the phloem zone was increased considerably by GA3, less by K and IAA. The lignified secondary wall of the pericyclic living fibres was dissolved by each of the hormones. Sieve tube member length decreased in all treatments, more in higher concentrations. K decreased the frequency of sieve tubes (most at 0.10 mg/α) and increased the frequency of parenchyma cells (optimum at 0.10 mg/α). GA3 also favoured formation of parenchyma cells and decrease of the frequency of sieve tubes, progressively with the increase of concentration. IAA also increased the parenchyma cell frequency progressively with concentration and decreased slightly the sieve tube frequency. IAA and GA3 increased ray frequency and decreased parenchyma cell diameter, much at high concentration. But K had less effect on ray frequency and increased parenchyma cell diameter progressively with concentrations.


international conference on numerical simulation of optoelectronic devices | 2009

Ge/Si photodetectors and group IV alloy based photodetector materials

P. K. Basu; N. R. Das; Bratati Mukhopadhyay; Gopa Sen; Mukul K. Das


Archive | 2008

QUEST FOR DIRECT GAP IN INDIRECT GAP GROUP -IV SEMICONDUCTORS FOR PHOTONIC DEVICE APPLICATIONS

P. K. Basu; Bratati Mukhopadhyay; Sumitra Ghosh; Gopa Sen


Physica E-low-dimensional Systems & Nanostructures | 2019

Study of Si-Ge-Sn based Heterobipolar Phototransistor (HPT) exploiting Quantum Confined Stark Effect and Franz Keldysh effect with and without resonant cavity

Soumava Ghosh; Bratati Mukhopadhyay; Gopa Sen; P. K. Basu


Solid State Communications | 2018

Type II band alignment in Ge 1-x-y Si x Sn y /Ge 1-α-β Si α Sn β heterojunctions

Swagata Dey; Bratati Mukhopadhyay; Gopa Sen; P. K. Basu


Physica Status Solidi B-basic Solid State Physics | 2018

Calculated Characteristics of a Transistor Laser Using Alloys of Gr-IV Elements

Bratati Mukhopadhyay; Gopa Sen; Souradeep De; Rikmantra Basu; Vedatrayee Chakraborty; P. K. Basu


Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on | 2010

Feasibilty of laser action in strained Ge and Group IV alloys on Si platform

P. K. Basu; Gopa Sen; Bratati Mukhopadhyay


international conference on computers and devices for communication | 2009

Feasibility of laser action at 1550 nm by direct gap type I GeC/GeSiSn heterojunctions

Bratati Mukhopadhyay; Gopa Sen; P. K. Basu

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P. K. Basu

University of Calcutta

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Swagata Dey

University of Calcutta

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N. R. Das

University of Calcutta

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P. C. Datta

University of Calcutta

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Rikmantra Basu

National Institute of Technology Delhi

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