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Graf Werner

Infineon Technologies

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Publication

Featured researches published by Graf Werner.

Archive | 2004

Production of a first contact perforated surface in a storage device having storage cells comprises preparing a semiconductor substrate with an arrangement of gate electrode strips on the semiconductor surface, and further processing

Graf Werner; Heineck Lars; Genz Oliver; Stavrev Momtchil; Vogt Mirko

Archive | 2004

Production of a contact hole in a semiconductor structure comprises forming an insulation made from silicon oxide for embedding first and second structural elements, forming a mask on the insulation, and further processing

Kroenke Matthias; Koehler Daniel; Graf Werner

Archive | 2003

Production of an electrically conducting contact on a substrate comprises forming bars on the substrate to form a trench between the bars, depositing a dielectric layer, selectively etching the dielectric layer and further processing

Kroenke Matthias; Graf Werner

Archive | 2003

Method for producing transistors in integrated semiconductor circuits

Graf Werner

Archive | 2003

Configuration of memory cells and a testing structure on a wafer has the cells as part of integrated circuits encasing the testing structure and a memory cell with connecting strip conductors.

Bartholomaeus Lars; Graf Werner; Josiek Andrei; Wichtendahl Ralph

Archive | 2006

Method for fabricating a semiconductor structure

Graf Werner; Heineck Lars; Horst Jana

Archive | 2003

Verfahren zur Herstellung eines Halbleiterprodukts mit einem Speicher- und einem Logikbereich

Graf Werner; Kieslich Albrecht

Archive | 2003

Gate-Struktur für einen Transistor und Verfahren zu deren Herstellung

Graf Werner; Bewersdorff-Sarlette Ulrike

Archive | 2003

Method for fabricating a semiconductor product with a memory region and a logic region

Graf Werner; Kieslich Albrecht

Archive | 2003

Process for removing polysilicon applied to a substrate comprises completely removing the polysilicon in first regions of an integrated semiconductor arrangement before the surface of the substrate is reached

Graf Werner; Kieslich Albrecht; Sachse Hermann; Genz Oliver

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Kieslich Albrecht

Infineon Technologies

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Genz Oliver

Infineon Technologies

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Heineck Lars

Infineon Technologies

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Kroenke Matthias

Infineon Technologies

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Sachse Hermann

Infineon Technologies

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Bartholomaeus Lars

Infineon Technologies

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Bewersdorff-Sarlette Ulrike

Infineon Technologies

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Feldner Klaus

Infineon Technologies

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Josiek Andrei

Infineon Technologies

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Koehler Daniel

Infineon Technologies

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