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Kroenke Matthias

Infineon Technologies

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Archive | 2002

Herstellungsverfahren für eine integrierte Schaltung

Kroenke Matthias; Wang Kae-Horng; Gustin Wolfgang

Archive | 2004

Verfahren zum Strukturieren einer Siliziumschicht sowie dessen Verwendung zur Herstellung einer integrierten Halbleiterschaltung

Lazar Laura; Kroenke Matthias

Archive | 2004

Production of a contact hole in a semiconductor structure comprises forming an insulation made from silicon oxide for embedding first and second structural elements, forming a mask on the insulation, and further processing

Kroenke Matthias; Koehler Daniel; Graf Werner

Archive | 2003

Production of an electrically conducting contact on a substrate comprises forming bars on the substrate to form a trench between the bars, depositing a dielectric layer, selectively etching the dielectric layer and further processing

Kroenke Matthias; Graf Werner

Archive | 2006

Verfahren zum Herstellen einer Halbleiterspeichereinrichtung

Kroenke Matthias; Bruchhaus Rainer; Enders Gerhard; Hartner Walter; Mikolajick Thomas; Nagel Nicolas; Roehner Michael

Archive | 2003

Verfahren zur Herstellung von Kontakten für integrierte Schaltungen

Wang Kae-Horng; Staub Ralf; Kroenke Matthias

Archive | 2008

Chain-FeRAM-Speichereinrichtung

Kroenke Matthias; Bruchhaus Rainer; Enders Gerhard; Hartner Walter; Mikolajick Thomas; Nagel Nicolas; Roehner Michael

Archive | 2003

Production of a semiconductor device e.g. chain ferroelectric random access memory device comprises forming and/or structuring capacitor arrangements on semiconductor substrate, passivating region and/or surface region

Bruchhaus Rainer; Enders Gerhard; Hartner Walter; Kroenke Matthias; Mikolajick Thomas; Nagel Nicolas; Roehner Michael

Archive | 2004

Manufacturing method for integrated circuit

Gustin Wolfgang; Wang Kae-Horng; Kroenke Matthias

Archive | 2004

Process for structuring a layer on the surface of a semiconductor component used in the production of NROM semiconductor memories comprises making the surface uneven before the layer to be structured is applied

Kroenke Matthias

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Hartner Walter

Infineon Technologies

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Bruchhaus Rainer

Siemens

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Enders Gerhard

Infineon Technologies

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Mikolajick Thomas

Infineon Technologies

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Nagel Nicolas

Siemens

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Roehner Michael

Infineon Technologies

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Wang Kae-Horng

Infineon Technologies

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Schindler Guenther

Infineon Technologies

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Gabric Zvonimir

Infineon Technologies

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Graf Werner

Infineon Technologies

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