Grzegorz Kaganowicz
Princeton University
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Publication
Featured researches published by Grzegorz Kaganowicz.
IEEE Transactions on Electron Devices | 1990
Alfred C. Ipri; Grzegorz Kaganowicz
A process for the fabrication of p-channel polysilicon MOS transistors is described. The process is compatible with the use of low-temperature glass substrates and replaces the use of ion implantation for the source/drain doping with in situ doped polysilicon. MOS transistors made with this process exhibit an on/off current ratio of 2.5*10/sup 5/, a mobility of 16 cm/sup 2//V-s, and a subthreshold slope of 1.3 V/decade. >
Archive | 1984
Grzegorz Kaganowicz; John W. Robinson
Archive | 1986
Grzegorz Kaganowicz; Alfred C. Ipri; Richard S. Crandall
Archive | 1984
Grzegorz Kaganowicz; John W. Robinson; John H. Thomas
Archive | 1986
Grzegorz Kaganowicz; Ronald E. Enstrom; John W. Robinson
Archive | 1981
Grzegorz Kaganowicz; John W. Robinson
Archive | 1986
Grzegorz Kaganowicz
Archive | 1977
Grzegorz Kaganowicz; John W. Robinson; Hirotsugu Yasuda
Archive | 1981
Grzegorz Kaganowicz; John W. Robinson
Archive | 1986
Grzegorz Kaganowicz; Ronald E. Enstrom; John W. Robinson
