Guang-Wei Deng

Coupling Two Distant Double Quantum Dots with a Microwave Resonator

We fabricated a hybrid device with two distant graphene double quantum dots (DQDs) and a microwave resonator. A nonlinear response is observed in the resonator reflection amplitude when the two DQDs are jointly tuned to the vicinity of the degeneracy points. This observation can be well fitted by the Tavis-Cummings (T-C) model which describes two two-level systems coupling with one photonic field. Furthermore, the correlation between the DC currents in the two DQDs is studied. A nonzero cross-current correlation is observed which has been theoretically predicted to be an important sign of nonlocal coupling between two distant systems. Our results explore T-C physics in electronic transport and also contribute to the study of nonlocal transport and future implementations of remote electronic entanglement.

Charge Number Dependence of the Dephasing Rates of a Graphene Double Quantum Dot in a Circuit QED Architecture

We use an on-chip superconducting resonator as a sensitive meter to probe the properties of graphene double quantum dots at microwave frequencies. Specifically, we investigate the charge dephasing rates in a circuit quantum electrodynamics architecture. The dephasing rates strongly depend on the number of charges in the dots, and the variation has a period of four charges, over an extended range of charge numbers. Although the exact mechanism of this fourfold periodicity in dephasing rates is an open problem, our observations hint at the fourfold degeneracy expected in graphene from its spin and valley degrees of freedom.

Strongly Coupled Nanotube Electromechanical Resonators

Coupling an electromechanical resonator with carbon-nanotube quantum dots is a significant method to control both the electronic charge and the spin quantum states. By exploiting a novel microtransfer technique, we fabricate two separate strongly coupled and electrically tunable mechanical resonators for the first time. The frequency of the two resonators can be individually tuned by the bottom gates, and in each resonator, the electron transport through the quantum dot can be strongly affected by the phonon mode and vice versa. Furthermore, the conductance of either resonator can be nonlocally modulated by the other resonator through phonon-phonon interaction between the two resonators. Strong coupling is observed between the phonon modes of the two resonators, where the coupling strength larger than 200 kHz can be reached. This strongly coupled nanotube electromechanical resonator array provides an experimental platform for future studies of the coherent electron-phonon interaction, the phonon-mediated long-distance electron interaction, and entanglement state generation.

Electrotunable artificial molecules based on van der Waals heterostructures

Electrically controlled evolution from an artificial molecule to an artificial atom in atomically thin MoS2 is demonstrated. Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices, including detecting and manipulating either single-electron charging behavior or spin and valley degrees of freedom. However, the most popular model systems, consisting of tunable double-quantum-dot molecules, are still extremely difficult to realize in these materials. We show that an artificial molecule can be reversibly formed in atomically thin MoS2 sandwiched in hexagonal boron nitride, with each artificial atom controlled separately by electrostatic gating. The extracted values for coupling energies at different regimes indicate a single-electron transport behavior, with the coupling strength between the quantum dots tuned monotonically. Moreover, in the low-density regime, we observe a decrease of the conductance with magnetic field, suggesting the observation of Coulomb blockade weak anti-localization. Our experiments demonstrate for the first time the realization of an artificial quantum-dot molecule in a gated MoS2 van der Waals heterostructure, which could be used to investigate spin-valley physics. The compatibility with large-scale production, gate controllability, electron-hole bipolarity, and new quantum degrees of freedom in the family of 2D materials opens new possibilities for quantum electronics and its applications.

Coherent phonon Rabi oscillations with a high frequency carbon nanotube phonon cavity

Phonon-cavity electromechanics allows the manipulation of mechanical oscillations similar to photon-cavity systems. Many advances on this subject have been achieved in various materials. In addition, the coherent phonon transfer (phonon Rabi oscillations) between the phonon cavity mode and another oscillation mode has attracted many interest in nanoscience. Here, we demonstrate coherent phonon transfer in a carbon nanotube phonon-cavity system with two mechanical modes exhibiting strong dynamical coupling. The gate-tunable phonon oscillation modes are manipulated and detected by extending the red-detuned pump idea of photonic cavity electromechanics. The first- and second-order coherent phonon transfers are observed with Rabi frequencies 591 and 125 kHz, respectively. The frequency quality factor product fQm ∼ 2 × 1012 Hz achieved here is larger than kBTbase/h, which may enable the future realization of Rabi oscillations in the quantum regime.

Quantum dot behavior in transition metal dichalcogenides nanostructures

Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on electron transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.

Measuring the complex admittance of a nearly isolated graphene quantum dot

We measured the radio-frequency reflection spectrum of an on-chip reflection line resonator coupled to a graphene double quantum dot (DQD), which was etched almost isolated from the reservoir and reached the low tunnel rate region. The charge stability diagram of DQD was investigated via dispersive phase and magnitude shift of the resonator with a high quality factor. Its complex admittance and low tunnel rate to the reservoir was also determined from the reflected signal of the on-chip resonator. Our method may provide a non-invasive and sensitive way of charge state readout in isolated quantum dots.

Symmetric reflection line resonator and its quality factor modulation by a two-dimensional electron gas

We have designed and fabricated a half-wavelength reflection line resonator (RLR) that consists of a pair of two coupled microstrip lines on a GaAs/AlGaAs heterostructure. By changing the top gate voltage on a square of two dimensional electron gas under the resonator, a large range of the quality factors can be obtained. Energy loss in the two-dimensional electron gas can be minimized, thus realizing a versatile resonator suitable for integration with semiconductor quantum circuits.

Introduction of DC line structures into a superconducting microwave 3D cavity

We report a technique that can noninvasively add multiple DC wires into a 3D superconducting microwave cavity for electronic devices that require DC electrical terminals. We studied the influence of our DC lines on the cavity performance systematically. We found that the quality factor of the cavity is reduced if any of the components of the electrical wires cross the cavity equipotential planes. Using this technique, we were able to incorporate a quantum dot (QD) device into a 3D cavity. We then controlled and measured the QD transport signal using the DC lines. We have also studied the heating effects of the QD by the microwave photons in the cavity.

Measuring the coherence of charge states in undoped GaAs/AlGaAs double quantum dots with photon-assisted tunneling

Photon-assisted tunneling is used to study coherent properties of a charge qubit which is formed in an undoped GaAs/AlGaAs heterostructure. We found the charge relaxation time T 1 to be around 15 ns and the inhomogeneous decoherence time to be around 330 ps at an electron temperature of 280 mK. This may be slightly better than that previously reported for doped devices, considering its temperature dependence. We discuss the role of donor fluctuation on the charge state coherence and possible ways for making improvements in the undoped devices.