Guido Goldoni

Full configuration interaction approach to the few-electron problem in artificial atoms

We present a new high performance configuration interaction code optimally designed for the calculation of the lowest-energy eigenstates of a few electrons in semiconductor quantum dots (also called artificial atoms) in the strong interaction regime. The implementation relies on a single-particle representation, but it is independent of the choice of the single-particle basis and, therefore, of the details of the device and configuration of external fields. Assuming no truncation of the Fock space of Slater determinants generated from the chosen single-particle basis, the code may tackle regimes where Coulomb interaction very effectively mixes many determinants. Typical strongly correlated systems lead to very large diagonalization problems; in our implementation, the secular equation is reduced to its minimal rank by exploiting the symmetry of the effective-mass interacting Hamiltonian, including square total spin. The resulting Hamiltonian is diagonalized via parallel implementation of the Lanczos algorithm. The code gives access to both wave functions and energies of first excited states. Excellent code scalability in a parallel environment is demonstrated; accuracy is tested for the case of up to eight electrons confined in a two-dimensional harmonic trap as the density is progressively diluted up to the Wigner regime, where correlations become dominant. Comparison with previous quantum Monte Carlo simulations in the Wigner regime demonstrates power and flexibility of the method.

SHAPE-INDEPENDENT SCALING OF EXCITONIC CONFINEMENT IN REALISTIC QUANTUM WIRES

The scaling of exciton binding energy in semiconductor quantum wires is investigated theoretically through a nonvariational, fully three-dimensional approach for a wide set of realistic state-of-the-art structures. We find that in the strong confinement limit the same potential-to-kinetic energy ratio holds for quite different wire cross sections and compositions. As a consequence, a universal (shape- and composition-independent) parameter can be identified that governs the scaling of the binding energy with size. Previous indications that the shape of the wire cross section may have important effects on exciton binding are discussed in the light of the present results

LOCAL OPTICAL SPECTROSCOPY IN QUANTUM CONFINED SYSTEMS : A THEORETICAL DESCRIPTION

A theoretical description of local absorption is proposed in order to investigate spectral variations on a length scale comparable with the extension of the relevant quantum states. A general formulation, including Coulomb correlation, is derived within the density-matrix formalism and applied to the prototypical case of coupled quantum wires. The results show that excitonic effects may have a crucial impact on the local absorption, with implications for the spatial resolution and the interpretation of near-field optical spectra

Stability, dynamical properties, and melting of a classical bilayer Wigner crystal

We investigate the stability, the dynamical properties and melting of a two-dimensional (2D) Wigner crystal (WC) of classical Coulombic particles in a bi-layer structure. Compared to the single-layer WC, this system shows a rich phase diagram. Five different crystalline phases are stable; the energetically favoured structure can be tuned by changing either the inter-layer distance or the particle density. Phase boundaries consist of both continuous and discontinuous transitions. We calculated the phonon excitations of the system within the harmonic approximation and we evaluated the melting temperature of the bi-layer WC by use of a modified Lindemann criterion, appropriate to 2D systems. We minimized the harmonic free-energy of the system with respect to the lattice geometry at different values of temperature/inter-layer distance and we found no temperature-induced structural phase transition.

Spectral diffusion and line broadening in single self-assembled GaAs∕AlGaAs quantum dot photoluminescence

We experimentally and theoretically investigate the photoluminescence broadening of different excitonic complexes in single self-assembled GaAs∕AlGaAs quantum dots. We demonstrate that the excitonic fine-structure splitting leads to a sizable line broadening whenever the detection is not resolved in polarization. The residual broadening in polarized measurements is systematically larger for the exciton with respect to both the trion and the biexciton recombination. The experimental data agree with calculations of the quantum confined Stark effect induced by charge defects in the quantum dot (QD) environment, denoting the role of the QD spectator carrier rearrangement in reducing the perturbation of the fluctuating environment.

Magnetic states in prismatic core multishell nanowires.

We study the electronic states of core multishell semiconductor nanowires, including the effect of strong magnetic fields. We show that the multishell overgrowth of a free-standing nanowire, together with the prismatic symmetry of the substrate, may induce quantum confinement of carriers in a set of quasi-1D quantum channels corresponding to the nanowire edges. Localization and interchannel tunnel coupling are controlled by the curvature at the edges and the diameter of the underlying nanowire. We also show that a magnetic field may induce either Aharonov-Bohm oscillations of the energy levels in the axial configuration, or a dimensional transition of the quantum states from quasi-1D to Landau levels for fields normal to the axis. Explicit predictions are given for nanostructures based on GaAs, InAs, and InGaN with different symmetries.

High mobility one- and two-dimensional electron systems in nanowire-based quantum heterostructures

Free-standing semiconductor nanowires in combination with advanced gate-architectures hold an exceptional promise as miniaturized building blocks in future integrated circuits. However, semiconductor nanowires are often corrupted by an increased number of close-by surface states, which are detrimental with respect to their optical and electronic properties. This conceptual challenge hampers their potentials in high-speed electronics and therefore new concepts are needed in order to enhance carrier mobilities. We have introduced a novel type of core-shell nanowire heterostructures that incorporate modulation or remote doping and hence may lead to high-mobility electrons. We demonstrate the validity of such concepts using inelastic light scattering to study single modulation-doped GaAs/Al0.16Ga0.84As core-multishell nanowires grown on silicon. We conclude from a detailed experimental study and theoretical analysis of the observed spin and charge density fluctuations that one- and two-dimensional electron channels are formed in a GaAs coaxial quantum well spatially separated from the donor ions. A total carrier density of about 3 × 10(7) cm(-1) and an electron mobility in the order of 50,000 cm(2)/(V s) are estimated. Spatial mappings of individual GaAs/Al0.16Ga0.84As core-multishell nanowires show inhomogeneous properties along the wires probably related to structural defects. The first demonstration of such unambiguous 1D- and 2D-electron channels and the respective charge carrier properties in these advanced nanowire-based quantum heterostructures is the basis for various novel nanoelectronic and photonic devices.

Evidence of Correlation in Spin Excitations of Few-Electron Quantum Dots

We report inelastic light scattering measurements of spin and charge excitations in nanofabricated AlGaAs/GaAs quantum dots with few electrons. A narrow spin excitation peak is observed and assigned to the intershell triplet-to-singlet monopole mode of dots with four electrons. Configuration-interaction theory provides precise quantitative interpretations that uncover large correlation effects that are comparable to exchange Coulomb interactions.

Electron and hole gas in modulation-doped GaAs/Al1−xGaxAs radial heterojunctions

We perform self-consistent Schroedinger-Poisson calculations with exchange and correlation corrections to determine the electron and hole gas in a radial heterojunction formed in a GaAs/AlGaAs core-multi-shell nanowire, which is either n- or p-doped. We show that the electron and hole gases can be tuned to different localizations and symmetries inside the core as a function of the doping density/gate potential. Contrary to planar heterojunctions, conduction electrons do not form a uniform 2D electron gas (2DEG) localized at the GaAs/AlGaAs interface, but rather show a transition between an isotropic, cylindrical distribution deep in the GaAs core (low doping) and a set of six tunnel-coupled quasi-1D channels at the edges of the interface (high doping). Holes, on the other hand, are much more localized at the GaAs/AlGaAs interface. At low doping, they present an additional localization pattern with six separated 2DEGs strips. The field generated by a back-gate may easily deform the electron or hole gas, breaking the sixfold symmetry. Single 2DEGs at one interface or multiple quasi-1D channels are shown to form as a function of voltage intensity, polarity, and carrier type.

Unintentional High-Density p-Type Modulation Doping of a GaAs/AlAs Core–Multishell Nanowire

Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum well in the AlAs shell effectively getters residual carbon acceptors leading to an unintentional p-type doping. Magneto-optical studies of such a GaAs/AlAs core-multishell NW reveal quantum confined emission. Theoretical calculations of NW electronic structure confirm quantum confinement of carriers at the core/shell interface due to the presence of ionized carbon acceptors in the 1 nm GaAs layer in the shell. Microphotoluminescence in high magnetic field shows a clear signature of avoided crossings of the n = 0 Landau level emission line with the n = 2 Landau level TO phonon replica. The coupling is caused by the resonant hole-phonon interaction, which points to a large two-dimensional hole density in the structure.