Guilhem de Valicourt

Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

Direct Modulation of Hybrid-Integrated InP/Si Transmitters for Short and Long Reach Access Network

Recent progresses on hybrid InP/Si integration are presented for achieving high-performance tunable transmitters for cost-sensitive wavelength division multiplexing access networks. We demonstrate the generation of on-off keying non return to zero modulation format using several types of integrated directly modulated and tunable lasers. The use of the high output power hybrid silicon transmitter enables up to 28.5 dB optical budget at BER = 3.8 × 10-3 (in-band FEC assumed) under 10 Gb/s direct modulation over 25 and 50 km. Long-reach transmission over 100 km single-mode fiber is also demonstrated. Based on an enhanced modulation bandwidth hybrid laser, we successfully achieve 21.4 Gb/s direct modulation including FEC overhead on 12 wavelengths over a short-reach access link (10 km).

New Advances on Heterogeneous Integration of III–V on Silicon

Recent advances on hybrid III-V/Si lasers and semiconductor optical amplifiers using a wafer bonding technique are reported. In particular, III-V/Si lasers exhibiting C-band tuning range and high side-mode suppression ratio as well as high-gain semiconductor optical amplifiers are demonstrated.

A Next-Generation Optical Packet-Switching Node Based on Hybrid III-V/Silicon Optical Gates

We report a hybrid silicon optical gate array based on a silicon waveguide with a III-V gain medium and two vertical grating couplers. The gates show a fast switching time, a high extinction ratio, and a positive fiber-to-fiber optical gain. The dynamic behavior of such a device is evaluated under electrically controlled gating. We further focus on a single gate performance in a packet-switched network. We demonstrate subwavelength switching operations with multiformat and multibit-rate optical packet based on direct and coherent detection.

High data rate coherent optical slot switched networks: a practical and technological perspective

We review several node architectures for optical slot switching ring networks, which can be used in metropolitan or datacenter applications, and compare them for their networking aspects. The dimensioning, quality of service, latency, and protection issues are discussed for the different approaches. The main devices, i.e. fast wavelength-tunable laser, burst-mode coherent receiver (which is required to enable high data rate transmission at 100 Gb/s and above), and a slot blocker for improved wavelength usage efficiency are described, and available technologies for each key building block are reviewed.

High-power dual-fed traveling wave photodetector circuits in silicon photonics.

We introduce the concept of dual-illuminated photodetectors for high-power applications. Illuminating the photodetector on both sides doubles the number of optical channels, boosting DC and RF power handling capability. This concept is demonstrated utilizing multiple-stage dual-illuminated traveling wave photodetector circuits in silicon photonics, showing a maximum DC photocurrent of 112 mA and a 3-dB bandwidth of 40 GHz at 0.3 mA. Peak continuous-wave RF power is generated up to 12.3 dBm at 2 GHz and 5.3 dBm at 40 GHz, at a DC photocurrent of 55 mA. High speed broadband data signals are detected with eye amplitudes of 2.2 V and 1.3 V at 10 Gb/s and 40 Gb/s, respectively. A theoretical analysis is presented illustrating design tradeoffs for the multiple-stage photodetector circuits based on the bandwidth and power requirements.

Hybrid III-V/Silicon SOA in Optical Network Based on Advanced Modulation Formats

A hybrid III-V/silicon semiconductor optical amplifier (SOA) is presented, which shows a maximum fiber-to-fiber gain of 10 dB and a maximum internal gain around 28 ± 2 dB. The device was fabricated from III-V material wafer-bonded onto a silicon-on-insulator wafer. The optical mode transfers between silicon and III-V waveguides by means of waveguide tapers. Vertical grating couplers are used to connect the SOA to optical fibers. The device was packaged and tested in a transmission experiment. In a loop configuration containing 25 km of single-mode fiber, the SOA amplifies data signals of various modulation formats. Transmission with a bit error rate below the forward error correction limit is demonstrated for up to ten loops using QPSK, six loop using 8QAM, and four loops using 16QAM.

RSOA-based external cavity laser as cost-effective upstream transmitter for WDM passive optical network

We experimentally investigate a cost-effective upstream transmitter for WDM PON using external cavity laser based on reflective semiconductor optical amplifier. The laser can be directly modulated and shows good performance at 1.25 and 2.5 Gb/s.

Monolithic Integrated Slot-Blocker for High Datarate Coherent Optical Slot Switched Networks

Recent progresses on monolithic SOI-based integration are presented for achieving high-performance slot-blocker for cost-sensitive metropolitan and datacenter networks. We review several nodes architectures for such optical slot switching ring networks. Such devices integrate up to 65 functional elements, allowing complex operations such as polarization and wavelength (de)multiplexing with sub-wavelength switching capability. Compact footprint, fast switching time (below 10 ns) as well as high extinction ratio (more than 20 dB) are demonstrated. We demonstrate the fast add/drop operation of advanced modulation formats (56/80 Gbit/s SP-QPSK, 128 Gbit/s PDM-QPSK, 256 Gbit/s PDM-16QAM, and 320 Gbit/s PDM-32QAM) using three generations of integrated slot-blockers.

Dual-illuminated parallel-fed traveling wave germanium photodetectors

We report 4-stage dual-illuminated Ge traveling wave photodetectors (TWPDs). Dual-illumination doubles the optical channels and boosts DC and RF power handling, resulting in a record figure-of-merit of an RF power-bandwidth area density of 0.66 mW-GHz/μm2.