Guillaume Huyet

The linewidth enhancement factor α of quantum dot semiconductor lasers

We show that the various techniques commonly used to measure the linewidth enhancement factor can lead to different values when applied to quantum dot semiconductor lasers. Such behaviour is a direct consequence of the intrinsic capture/escape dynamics of quantum dot materials and of the free carrier plasma effects. This provides an explanation for the wide range of values experimentally measured and the linewidth re-broadening recently measured.

RF Linewidth in Monolithic Passively Mode-Locked Semiconductor Laser

We have analyzed theoretically and experimentally the linewidth of the first harmonic of the photocurrent (radio-frequency (RF) linewidth) in monolithic passively mode-locked semiconductor lasers. Due to the absence of restoring force, the timing jitter is directly related to the RF linewidth, avoiding possible underestimations made with conventional methods of phase noise measurement. The RF linewidth is also analytically related to the pulse characteristics using Hauss model. The timing stability performance of a promising two-section quantum-dot laser is presented using RF linewidth measurements. Experimental evolution of the RF linewidth with power and pulsewidth is finally compared to the analytical expression.

Sensitivity of quantum-dot semiconductor lasers to optical feedback

The sensitivity of quantum-dot semiconductor lasers to optical feedback is analyzed with a Lang-Kobayashi approach applied to a standard quantum-dot laser model. The carriers are injected into a quantum well and are captured by, or escape from, the quantum dots through either carrier-carrier or phonon-carrier interaction. Because of Pauli blocking, the capture rate into the dots depends on the carrier occupancy level in the dots. Here we show that different carrier capture dynamics lead to a strong modification of the damping of the relaxation oscillations. Regions of increased damping display reduced sensitivity to optical feedback even for a relatively large alpha factor.

Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states

The carrier-induced refractive index in quantum dot (QD) structures due to optical transitions from QD levels to continuum states is considered. It is shown that, for large photon energies, the refractive index change is given asymptotically by the Drude formula. Calculations of the linewidth enhancement factor, α, show that α∼1 due to this contribution to the total refractive index. Furthermore, for highly localized QD states, the absorption coefficient at the photon energies ∼0.8–1.0 eV due to these transitions can be on the order of 103 m−1.

Electron and hole dynamics of InAs∕GaAs quantum dot semiconductor optical amplifiers

Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs∕GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers.

Optically injected quantum-dot lasers

The response of an optically injected quantum-dot semiconductor laser (SL) is studied both experimentally and theoretically. In particular, the nature of the locking boundaries is investigated, revealing features more commonly associated with Class A lasers rather than conventional Class B SLs. Experimentally, two features stand out; the first is an absence of instabilities resulting from relaxation oscillations, and the second is the observation of a region of bistability between two locked solutions. Using rate equations appropriate for quantum-dot lasers, we analytically determine the stability diagram in terms of the injection rate and frequency detuning. Of particular interest are the Hopf and saddle-node locking boundaries that explain how the experimentally observed phenomena appear.

Carrier capture dynamics of InAs/GaAs quantum dots

Carrier dynamics of a 1.3μm InAs∕GaAs quantum dot amplifier is studied using heterodyne pump-probe spectroscopy. Measurements of the recovery times versus injection current reveal a power law behavior predicted by a quantum dot rate equation model. These results indicate that Auger processes dominate the carrier dynamics.

Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si

In this paper, we present observations of quantum confinement and quantum-confined Stark effect electroabsorption in Ge quantum wells with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V quantum well structures at similar wavelengths. We also designed and fabricated a coplanar high-speed modulator, and demonstrated modulation at 10 GHz and a 3.125-GHz eye diagram for 30-¿m-sized modulators.

Quantum-Dot Mode-Locked Lasers With Dual-Mode Optical Injection

Quantum-dot mode-locked lasers are injection-locked by coherent two-tone master sources. Spectral tuning, significantly improved time-bandwidth product, and low jitter are demonstrated without deterioration of the pulse properties.

Delay-induced excitability.

We analyze the stochastic dynamics of a bistable system under the influence of time-delayed feedback. Assuming an asymmetric potential, we show the existence of a regime in which the system dynamics displays excitability by calculating the relevant residence time distributions and power spectra. Experimentally we then observe this behavior in the polarization dynamics of a vertical cavity surface emitting laser with optoelectronic feedback. Extending these observations to two-dimensional systems with diffusive coupling, we finally show numerically that delay-induced excitability can lead to the appearance of propagating wave fronts and spirals.