Guiqiang Dong

On the Use of Soft-Decision Error-Correction Codes in nand Flash Memory

As technology continues to scale down, NAND Flash memory has been increasingly relying on error-correction codes (ECCs) to ensure the overall data storage integrity. Although advanced ECCs such as low-density parity-check (LDPC) codes can provide significantly stronger error-correction capability over BCH codes being used in current practice, their decoding requires soft-decision log-likelihood ratio (LLR) information. This results in two critical issues. First, accurate calculation of LLR demands fine-grained memory-cell sensing, which nevertheless tends to incur implementation overhead and access latency penalty. Hence, it is critical to minimize the fine-grained memory sensing precision. Second, accurate calculation of LLR also demands the availability of a memory-cell threshold-voltage distribution model. As the major source for memory-cell threshold-voltage distribution distortion, cell-to-cell interference must be carefully incorporated into the model. However, these two critical issues have not been ever addressed in the open literature. This paper attempts to address these open issues. We derive mathematical formulations to approximately model the threshold-voltage distribution of memory cells in the presence of cell-to-cell interference, based on which the calculation of LLRs is mathematically formulated. This paper also proposes a nonuniform memory sensing strategy to reduce the memory sensing precision and, thus, sensing latency while still maintaining good error-correction performance. In addition, we investigate these design issues under the scenario when we can also sense interfering cells and hence explicitly estimate cell-to-cell interference strength. We carry out extensive computer simulations to demonstrate the effectiveness and involved tradeoffs, assuming the use of LDPC codes in 2-bits/cell NAND Flash memory.

Quasi-nonvolatile SSD: Trading flash memory nonvolatility to improve storage system performance for enterprise applications

This paper advocates a quasi-nonvolatile solid-state drive (SSD) design strategy for enterprise applications. The basic idea is to trade data retention time of NAND flash memory for other system performance metrics including program/erase (P/E) cycling endurance and memory programming speed, and meanwhile use explicit internal data refresh to accommodate very short data retention time (e.g., few weeks or even days). We also propose SSD scheduling schemes to minimize the impact of internal data refresh on normal I/O requests. Based upon detailed memory cell device modeling and SSD system modeling, we carried out simulations that clearly show the potential of using this simple quasi-nonvolatile SSD design strategy to improve system cycling endurance and speed performance. We also performed detailed energy consumption estimation, which shows the energy consumption overhead induced by data refresh is negligible.

Estimating Information-Theoretical nand Flash Memory Storage Capacity and its Implication to Memory System Design Space Exploration

Today and future NAND flash memory will heavily rely on system-level fault-tolerance techniques such as error correction code (ECC) to ensure the overall system storage integrity. Since ECC demands the storage of coding redundancy and hence degrades effective cell storage efficiency, it is highly desirable to use more powerful coding solutions that can maintain the system storage reliability at less coding redundancy. This has motivated a growing interest in the industry to search for alternatives to BCH code being used in today. Regardless to specific ECCs, it is of great practical importance to know the theoretical limit on the achievable cell storage efficiency, which motivates this work. We first develop an approximate NAND flash memory channel model that explicitly incorporates program/erase (P/E) cycling effects and cell-to-cell interference, based on which we then develop strategies for estimating the information-theoretical bounds on cell storage efficiency. We show that it can readily reveal the tradeoffs among cell storage efficiency, P/E cycling endurance, and retention limit, which can provide important insights for system designers. Finally, motivated by the dynamics of P/E cycling effect revealed by the information-theoretical study, we propose two memory system design techniques that can improve the average NAND flash memory programming speed and increase the total amount of user data that can be stored in NAND flash cell over its entire lifetime.

Enabling NAND Flash Memory Use Soft-Decision Error Correction Codes at Minimal Read Latency Overhead

With the aggressive technology scaling and use of multi-bit per cell storage, NAND flash memory is subject to continuous degradation of raw storage reliability and demands more and more powerful error correction codes (ECC). This inevitable trend makes conventional BCH code increasingly inadequate, and iterative coding solutions such as LDPC codes become very natural alternative options. However, these powerful coding solutions demand soft-decision memory sensing, which results in longer on-chip memory sensing latency and memory-to-controller data transfer latency. Leveraging well-established lossless data compression theories, this paper presents several simple design techniques that can reduce such latency penalty caused by soft-decision ECCs. Their effectiveness have been well demonstrated through extensive simulations, and the results suggest that the latency can be reduced by up to 85.3%.

Error Rate-Based Wear-Leveling for nand Flash Memory at Highly Scaled Technology Nodes

This brief presents a NAND Flash memory wear-leveling algorithm that explicitly uses memory raw bit error rate (BER) as the optimization target. Although NAND Flash memory wear-leveling has been well studied, all the existing algorithms aim to equalize the number of programming/erase cycles among all the memory blocks. Unfortunately, such a conventional design practice becomes increasingly suboptimal as inter-block variation becomes increasingly significant with the technology scaling. This brief presents a dynamic BER-based greedy wear-leveling algorithm that uses BER statistics as the measurement of memory block wear-out pace, and guides dynamic memory block data swapping to fully maximize the wear-leveling efficiency. Simulations have been carried out to quantitatively demonstrate its advantages over existing wear-leveling algorithms.

Using Lossless Data Compression in Data Storage Systems: Not for Saving Space

Lossless data compression for data storage has become less popular as mass data storage systems are becoming increasingly cheap. This leaves many files stored on mass data storage media uncompressed although they are losslessly compressible. This paper proposes to exploit the lossless compressibility of those files to improve the underlying storage system performance metrics such as energy efficiency and access speed, other than saving storage space as in conventional practice. The key idea is to apply runtime lossless data compression to enable an opportunistic use of a stronger error correction code (ECC) with more coding redundancy in data storage systems, and trade such opportunistic extra error correction capability to improve other system performance metrics in the runtime. Since data storage is typically realized in the unit of equal-sized sectors (e.g., 512 B or 4 KB user data per sector), we only apply this strategy to each individual sector independently in order to be completely transparent to the firmware, operating systems, and users. Using low-density parity check (LDPC) code as ECC in storage systems, this paper quantitatively studies the effectiveness of this design strategy in both hard disk drives and NAND flash memories. For hard disk drives, we use this design strategy to reduce average hard disk drive read channel signal processing energy consumption, and results show that up to 38 percent read channel energy saving can be achieved. For NAND flash memories, we use this design strategy to improve average NAND flash memory write speed, and results show that up to 36 percent write speed improvement can be achieved for 2 bits/cell NAND flash memories.

Techniques for embracing intra-cell unbalanced bit error characteristics in MLC NAND flash memory

Multi-level per cell (MLC) technique has been widely used to improve the storage density of NAND flash memory. However, bits stored in each MLC memory cell are subject to different bit error rates. In current practice, bits stored in each cell belong to different pages and all the pages are protected using the same ECC tuned for the worst-case scenario, which results in over-protection for other pages and hence reduced storage capacity. In this work, we first develop a flash memory channel model to capture the dominant noise sources such as cell-to-cell interference and random telegraph noise. Using this model, we demonstrate the significant intra-cell unbalanced bit error characteristics for MLC NAND flash memory. We further develop two techniques that can better address this issue to minimize the overall redundancy overhead and hence improve effective capacity. Firstly, we propose an aggregated page programming scheme by modifying the recently emerging full-sequence MLC NAND flash memory programming strategy, which can ensure all the pages experience the same overall bit error rates so that the coding rate of BCH code can be increased by more than 6%. Secondly, in the implementation of non-binary ECC such as RS code, we propose to combine a bit-error-rate-aware symbol grouping scheme in order to further reduce the required coding redundancy.

Using Lifetime-Aware Progressive Programming to Improve SLC NAND Flash Memory Write Endurance

This paper advocates a lifetime-aware progressive programming concept to improve single-level per cell NAND flash memory write endurance. NAND flash memory program/erase (P/E) cycling gradually degrades memory cell storage noise margin, and sufficiently strong fault tolerance must be used to ensure the memory P/E cycling endurance. As a result, the relatively large cell storage noise margin in early memory lifetime is essentially wasted in conventional design practice. This paper proposes to always fully utilize the available cell storage noise margin by adaptively adjusting the number of storage levels per cell, and progressively use these levels to realize multiple 1-bit programming operations between two consecutive erase operations. This simple progressive programming design concept is realized by two different implementation strategies, which are discussed and compared in detail. On the basis of an approximate NAND flash memory device model, we carried out simulations to quantitatively evaluate this design concept. The results show that it can improve the write endurance by 35.9% and in the meanwhile improve the average programming speed by 12% without sacrificing read speed.

Candidate bit based bit-flipping decoding algorithm for LDPC codes

A novel hard-decision decoding algorithm for low-density parity-check (LDPC) codes is proposed in this paper. This algorithm employs the correlation information among the column vectors of the parity-check matrix and syndrome vector for decoding. It does not require soft information, and has low decoding complexity. Simulation results show that the proposed decoding algorithm could provide an effective tradeoff between error performance and decoding complexity.

Using Quasi-EZ-NAND Flash Memory to Build Large-Capacity Solid-State Drives in Computing Systems

Future flash-based solid-state drives (SSDs) must employ increasingly powerful error correction code (ECC) and digital signal processing (DSP) techniques to compensate the negative impact of technology scaling on NAND flash memory device reliability. Currently, all the ECC and DSP functions are implemented in a central SSD controller. However, the use of more powerful ECC and DSP makes such design practice subject to significant speed performance degradation and complicated controller implementation. An EZ-NAND (Error Zero NAND) flash memory design strategy is emerging in the industry, which moves all the ECC and DSP functions to each memory chip. Although EZ-NAND flash can simplify controller design and achieve high system speed performance, its high silicon cost may not be affordable for large-capacity SSDs in computing systems. We propose a quasi-EZ-NAND design strategy that hierarchically distributes ECC and DSP functions on both NAND flash memory chips and the central SSD controller. Compared with EZ-NAND design concept, it can maintain almost the same speed performance while reducing silicon cost overhead. Assuming the use of low-density parity-check (LDPC) code and postcompensation DSP technique, trace-based simulations show that SSDs using quasi-EZ-NAND flash can realize almost the same speed as SSDs using EZ-NAND flash, and both can reduce the average SSD response time by over 90 percent compared with conventional design practice. Silicon design at 65 nm node shows that quasi-EZ-NAND can reduce the silicon cost overhead by up to 44 percent compared with EZ-NAND.