Gunta Kunakova

Space charge limited current mechanism in Bi2S3 nanowires

We report on the charge transport properties of individual Bi2S3 nanowires grown within the pores of anodized aluminum oxide templates. The mean pore diameter was 80 nm. Space charge limited current is the dominating conduction mechanism at temperatures below 160 K. Characteristic parameters of nanowires, such as trap concentration and trap characteristic energy, were estimated from current-voltage characteristics at several temperatures.

Sensing properties of assembled Bi2S3 nanowire arrays

Bismuth sulfide (Bi2S3) nanowires were grown in porous aluminium oxide template and a selective chemical etching was applied to transfer the nanowires to a solution. Well aligned nanowire arrays were assembled on pre-patterned silicon substrates employing dielectrophoresis. Electron beam lithography was used to connect aligned individual nanowires to the common macroelectrode. In order to evaluate the conductometric sensing performance of the Bi2S3 nanowires, current–voltage characteristics were measured at different relative humidity (RH) levels (5–80%) / argon medium. The response of the Bi2S3 nanowires depending of RH is found to be considerably different from those reported for other types of nanowire RH sensor devices.

Photoconductive properties of Bi2S3 nanowires

The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane individual Bi2S3 nanowires, possibly due to charge carrier trapping at the interface between the nanowire surface and the pore walls.

Young’s modulus and indirect morphological analysis of Bi2Se3 nanoribbons by resonance measurements

An electrostatically induced resonance behaviour of individual topological insulator Bi2Se3 nanoribbons grown by a catalyst free vapour-solid synthesis was studied in situ by scanning electron microscopy. It was demonstrated that the relation between the resonant frequencies of vibrations in orthogonal planes can be applied to distinguish the nanoribbons with rectangular cross-sections from the nanoribbons having step-like morphology (terraces). The average Youngs modulus of the Bi2Se3 nanoribbons with rectangular cross-sections was found to be 44 ± 4 GPa.

Author Correction: Induced unconventional superconductivity on the surface states of Bi 2 Te 3 topological insulator

The original version of this Article omitted the following from the Acknowledgements:“This work was partly supported by the Research Council of Norway through its Centres of Excellence funding scheme, project number 262633, QuSpin.”This has now been corrected in both the PDF and HTML versions of the article.

Relative Humidity Dependent Resistance Switching of Bi2S3 Nanowires

Electrical properties of Bi2S3 nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.

Impedance and admittance characteristics of Bi2S3 nanowire arrays

Current studies of the electrical impedance and admittance characteristics of the anodised aluminum oxide (AAO) nanoporous arrays and bismuth sulphide (Bi2S3) nanowire within AAO membranes are presented. The influence of potential and frequency scan rate effect produced on the real, imaginary and complex electrochemical impedance and double layer capacitance of the AAO nanopore and the Bi2S3 nanowire arrays were studied.

Characterization of Resistivity of Sb2S3 Semiconductor Nanowires by Conductive AFM and In Situ Methods

Conductive AFM and in situ methods were used to determine contact resistance and resistivity of individual Sb2S3 nanowires. Nanowires were deposited on oxidized Si surface for in situ measurements and on Si surface with macroelectrodes for conductive AFM (C-AFM) measurements. Contact resistance was determined by measurement of I(V) characteristics at different distances from the nanowire contact with the macroelectrode and resistivity of nanowires was determined. Sb2S3 is a soft material with low adhesion force to the surface and therefore special precautions were taken during measurements.