Jana Andzane

Two-Terminal Nanoelectromechanical Devices Based on Germanium Nanowires

A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM-STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be controlled by the applied voltage. The operation and failure conditions of the bistable device were investigated, i.e. the influence of nanowire diameter, the surface oxide layer on the nanowires and the current density. During ON/OFF cycles the Ge nanowires were observed to be more stable than carbon nanotubes, working at similar conditions, due to the higher mechanical stability of the nanowires. The higher resistivity of Ge nanowires, compared to carbon nanotubes, provides potential application of these 1D nanostructures in high-voltage devices.

Two-terminal nanoelectromechanical bistable switches based on molybdenum-sulfur-iodine molecular wire bundles.

We demonstrate the application of Mo(6)S(3)I(6) molecular wire bundles for electrically controllable two-terminal on-off switches. We investigate how changes in the contact electrode material and geometry influence the device characteristics, hysteretic switching behavior and device stability. We also determine the device operating parameters, particularly the Youngs moduli (40-270 GPa), operating current densities (3.2 x 10(5)-7 x 10(6) A m(-2)) and force constants. Although qualitatively, the properties of Mo(6)S(3)I(6) nanowires in nanoelectromechanical (NEM) switches are similar to those of carbon nanotubes (CNTs), their lower friction coefficient, higher mechanical stability and higher operation voltages give specific advantages in terms of smaller differences in on-off operating potentials, higher switching speeds and lower energy consumption than CNTs, which are critical for applications in NEM devices.

An AC-assisted single-nanowire electromechanical switch

A unique two-source controlled nanoelectromechanical switch has been assembled from individual, single-clamped Ge nanowires. The switching behaviour was achieved by superimposing the control signals of specific frequencies to the electrostatic potential of the output terminals, eliminating the need for an additional gate electrode. Using an in situ manipulation technique inside a scanning electron microscope, we demonstrate that the pull-out force required to overcome adhesion at the contact can be significantly reduced by exciting mechanical resonant modes within the nanowire.

Photoconductive properties of Bi2S3 nanowires

The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane individual Bi2S3 nanowires, possibly due to charge carrier trapping at the interface between the nanowire surface and the pore walls.

Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi2Se3 Interlayers between Conductive Electrodes

We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist of a functional Bi2Se3 layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi2Se3 nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi2Se3 nanobelts, visualize the processes occurring in the device under the influence of applied external voltage, and establish the limitations to the possible operational conditions.

Vapor–solid synthesis and enhanced thermoelectric properties of non-planar bismuth selenide nanoplates on graphene substrate

In this work, stoichiometric separate bismuth selenide (Bi2Se3) nanoplates and continuous Bi2Se3 coatings are synthesized on graphene substrate by catalyst-free vapor–solid deposition method. The orientation of synthesized nanoplates relative to the substrate surface varies from heteroepitaxial (planar) to oriented under different angles (non-planar). The non-planar growth of the nanoplates was achieved for the first time by short-term carrier inert gas flow in certain temperature interval of the synthesis process. The crystallographic growth directions of non-planar nanoplates were determined from HRTEM images as well as estimated from the slope angles of non-planar nanoplates. Bi2Se3 coatings consisting of combination of planar and non-planar nanoplates exhibit significantly enhanced in comparison with coating consisting of only planar coalescent Bi2Se3 nanoplates thermoelectric properties. Demonstrated graphene/Bi2Se3/graphene devices may find applications in thermoelectric and photo-detection sensors.

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

This review summarizes relevant research in the field of electrostatically actuated nanobeam-based nanoelectromechanical (NEM) switches. The main switch architectures and structural elements are briefly described and compared. Investigation methods that allow for exploring coupled electromechanical interactions as well as studies of mechanically or electrically induced effects are covered. An examination of the complex nanocontact behaviour during various stages of the switching cycle is provided. The choice of the switching element and the electrode is addressed from the materials perspective, detailing the benefits and drawbacks for each. An overview of experimentally demonstrated NEM switching devices is provided, and together with their operational parameters, the reliability issues and impact of the operating environment are discussed. Finally, the most common NEM switch failure modes and the physical mechanisms behind them are reviewed and solutions proposed.

Young’s modulus and indirect morphological analysis of Bi2Se3 nanoribbons by resonance measurements

An electrostatically induced resonance behaviour of individual topological insulator Bi2Se3 nanoribbons grown by a catalyst free vapour-solid synthesis was studied in situ by scanning electron microscopy. It was demonstrated that the relation between the resonant frequencies of vibrations in orthogonal planes can be applied to distinguish the nanoribbons with rectangular cross-sections from the nanoribbons having step-like morphology (terraces). The average Youngs modulus of the Bi2Se3 nanoribbons with rectangular cross-sections was found to be 44 ± 4 GPa.

Devices based on semiconductor nanowires

Recently, nanoelectromechanical systems (NEMS) have attracted much attention due to their unique properties and possible applications that differ greatly from those of microelectromechanical systems. NEMS operating frequencies may achieve giga- and terahertz levels and their power consumption and heat capacity is extremely low. Moreover, integration levels may reach 1012 devices per cm−2. In this review, we present techniques for integrating semiconductor materials in NEMS. In particular, we examine fabrication, structure, properties and potential applications of two main classes of NEMS, namely, resonators and switches.