Günter Reiss

Magnetic vortex core reversal by excitation with short bursts of an alternating field

The vortex state, characterized by a curling magnetization, is one of the equilibrium configurations of soft magnetic materials and occurs in thin ferromagnetic square and disk-shaped elements of micrometre size and below. The interplay between the magnetostatic and the exchange energy favours an in-plane, closed flux domain structure. This curling magnetization turns out of the plane at the centre of the vortex structure, in an area with a radius of about 10 nanometres—the vortex core. The vortex state has a specific excitation mode: the in-plane gyration of the vortex structure about its equilibrium position. The sense of gyration is determined by the vortex core polarization. Here we report on the controlled manipulation of the vortex core polarization by excitation with small bursts of an alternating magnetic field. The vortex motion was imaged by time-resolved scanning transmission X-ray microscopy. We demonstrate that the sense of gyration of the vortex structure can be reversed by applying short bursts of the sinusoidal excitation field with amplitude of about 1.5 mT. This reversal unambiguously indicates a switching of the out-of-plane core polarization. The observed switching mechanism, which can be understood in the framework of micromagnetic theory, gives insights into basic magnetization dynamics and their possible application in data storage.

Co2MnSi Heusler alloy as magnetic electrodes in magnetic tunnel junctions

As a consequence of the growing theoretical predictions of 100% spin-polarized half- and full-Heusler compounds over the past six years, Heusler alloys are among the most promising materials class for future magnetoelectronic and spintronic applications. We have integrated Co2MnSi, as a representative of the full-Heusler compound family, as one magnetic electrode into magnetic tunnel junctions. The preparation strategy has been chosen so as to sputter Co2MnSi at room temperature onto a V-buffer layer, which assists in (110) texture formation, and to deposit the Al-barrier layer directly thereafter. After plasma oxidizing the Al-barrier layer, subsequent annealing leads (1) to the texture formation and (2) to the appropriate atomic ordering within the Co2MnSi, and (3) homogenizes the AlOx barrier. It is shown that the magnetic switching of the ferromagnetic electrodes is well controlled from room temperature down to 10K. The resulting tunnel magnetoresistance-effect amplitude of the Co2MnSi containing magn...

Quantitative study of the spin Hall magnetoresistance in ferromagnetic insulator/normal metal hybrids

We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic insulator, we use either yttrium iron garnet, nickel ferrite, or magnetite and for the nonferromagnet, copper or gold. The spin Hall magnetoresistance effect is theoretically ascribed to the combined action of spin Hall and inverse spin Hall effect in the platinum metal top layer. It therefore should characteristically depend upon the orientation of the magnetization in the adjacent ferromagnet and prevail even if an additional, nonferromagnetic metal layer is inserted between Pt and the ferromagnet. Our experimental data corroborate these theoretical conjectures. Using the spin Hall magnetoresistance theory to analyze our data, we extract the spin Hall angle and the spin diffusion length in platinum. For a spin-mixing conductance of 4×1014 ??1m?2, we obtain a spin Hall angle of 0.11±0.08 and a spin diffusion length of (1.5±0.5) nm for Pt in our thin-film samples

The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse-Neuron System

Memristors cover a gap in the capabilities of basic electronic components by remembering the history of the applied electric potentials, and are considered to bring neuromorphic computers closer by imitating the performance of synapses.[1–3] We used memristive magnetic tunnel junctions[4,5] based on MgO to demonstrate that the synaptic functionality is complemented by neuron-like behavior in these nanoscopic devices. The synaptic functionality originates in a resistance change caused by a voltage-driven oxygen vacancy motion[6] within the MgO layer. The additional functionality provided by magnetic electrodes enabled a current-driven resistance modulation due to spin-transfer torque.[7] We showed that a phenomenon known as back-hopping[8–11] leads to repeated switching between two resistance levels accompanied by current spiking, which emulates neuronal behavior. As a result, this remarkably simple system, which is composed of two magnetic layers separated by an insulator, provides a sufficient basis for the fabrication of a complete neural network. According to a simple model, the human brain consists of a network of neurons, axons and synapses. Neurons exchange electrical impulses (i.e., spikes) along their axons, and synapses are the functionalized junctions between axons and neurons. The structure of the network is defined by the spatial arrangement of neurons and axons and by the strength of each synaptic connection. In this framework, one can equate the current configuration of the network with “knowledge” and its modulation with “learning”. In the conventional (Hebbian) concept of learning,[12] synaptic strength is modified by the coincident activity of presynaptic and postsynaptic neurons. In the past few years, a series of experiments has revealed a new picture. These studies suggest that instead of mere coincidence, the precise timing of presynaptic and postsynaptic spikes (i.e., spike-timing-dependent plasticity, STDP) plays a decisive role in determining the type of synaptic modification.[13,14] This modification can lead to a persistent increase or decrease in synaptic strength, commonly referred to as long-term potentiation (LTP) or long-term depression (LTD). Software inspired by neuronal networks is widely used for specific tasks, such as pattern recognition. In addition, hardware

Scaling behavior of the spin pumping effect in ferromagnet-platinum bilayers.

We systematically measured the dc voltage V(ISH) induced by spin pumping together with the inverse spin Hall effect in ferromagnet-platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, V(ISH) invariably has the same polarity, and scales with the magnetization precession cone angle. These findings, together with the spin mixing conductance derived from the experimental data, quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect.

Spin polarization in half-metals probed by femtosecond spin excitation

Knowledge of the spin polarization is of fundamental importance for the use of a material in spintronics applications. Here, we used femtosecond optical excitation of half-metals to distinguish between half-metallic and metallic properties. Because the direct energy transfer by Elliot-Yafet scattering is blocked in a half-metal, the demagnetization time is a measure for the degree of half-metallicity. We propose that this characteristic enables us vice versa to establish a novel and fast characterization tool for this highly important material class used in spin-electronic devices. The technique has been applied to a variety of materials where the spin polarization at the Fermi level ranges from 45 to 98%: Ni, Co(2)MnSi, Fe(3)O(4), La(0.66)Sr(0.33)MnO(3) and CrO(2).

Local Charge and Spin Currents in Magnetothermal Landscapes

A scannable laser beam is used to generate local thermal gradients in metallic (Co2FeAl) or insulating (Y3Fe5O12) ferromagnetic thin films. We study the resulting local charge and spin currents that arise due to the anomalous Nernst effect (ANE) and the spin Seebeck effect (SSE), respectively. In the local ANE experiments, we detect the voltage in the Co2FeAl thin film plane as a function of the laser-spot position and external magnetic field magnitude and orientation. The local SSE effect is detected in a similar fashion by exploiting the inverse spin Hall effect in a Pt layer deposited on top of the Y3Fe5O12. Our findings establish local thermal spin and charge current generation as well as spin caloritronic domain imaging.

Scanning tunneling microscopy on rough surfaces: quantitative image analysis

In this communication, the application of scanning tunneling microscopy (STM) for a quantitative evaluation of roughnesses and mean island sizes of polycrystalline thin films is discussed. Provided strong conditions concerning the resolution are satisfied, the results are in good agreement with standard techniques as, for example, transmission electron microscopy. Owing to its high resolution, STM can supply a better characterization of surfaces than established methods, especially concerning the roughness. Microscopic interpretations of surface dependent physical properties thus can be considerably improved by a quantitative analysis of STM images.

A biochip based on magnetoresistive sensors

The signal response of Bangs Laboratories magnetic markers with a mean diameter of 0.86 /spl mu/m on a spiral-shaped giant magnetoresistance sensor with a diameter of 70 /spl mu/m is investigated. The data show a linear dependence of the sensor signal on the surface coverage of the magnetic markers. The detection limit is reached at a coverage of about 5%, which corresponds to about 200 markers distributed across the surface of the sensor. The corresponding molecular binding of the analyte DNA and the magnetic markers show good selectivity and sensitivity.

Tunneling magnetothermopower in magnetic tunnel junction nanopillars.

We study tunneling magnetothermopower (TMTP) in CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars. Thermal gradients across the junctions are generated by an electric heater line. Thermopower voltages up to a few tens of μV between the top and bottom contact of the nanopillars are measured which scale linearly with the applied heating power and hence the thermal gradient. The thermopower signal varies by up to 10  μV upon reversal of the relative magnetic configuration of the two CoFeB layers from parallel to antiparallel. This signal change corresponds to a large spin-dependent Seebeck coefficient of the order of 100  μV/K and a large TMTP change of the tunnel junction of up to 90%.