Jan-Michael Schmalhorst

Quantitative study of the spin Hall magnetoresistance in ferromagnetic insulator/normal metal hybrids

We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic insulator, we use either yttrium iron garnet, nickel ferrite, or magnetite and for the nonferromagnet, copper or gold. The spin Hall magnetoresistance effect is theoretically ascribed to the combined action of spin Hall and inverse spin Hall effect in the platinum metal top layer. It therefore should characteristically depend upon the orientation of the magnetization in the adjacent ferromagnet and prevail even if an additional, nonferromagnetic metal layer is inserted between Pt and the ferromagnet. Our experimental data corroborate these theoretical conjectures. Using the spin Hall magnetoresistance theory to analyze our data, we extract the spin Hall angle and the spin diffusion length in platinum. For a spin-mixing conductance of 4×1014 ??1m?2, we obtain a spin Hall angle of 0.11±0.08 and a spin diffusion length of (1.5±0.5) nm for Pt in our thin-film samples

Spin polarization in half-metals probed by femtosecond spin excitation

Knowledge of the spin polarization is of fundamental importance for the use of a material in spintronics applications. Here, we used femtosecond optical excitation of half-metals to distinguish between half-metallic and metallic properties. Because the direct energy transfer by Elliot-Yafet scattering is blocked in a half-metal, the demagnetization time is a measure for the degree of half-metallicity. We propose that this characteristic enables us vice versa to establish a novel and fast characterization tool for this highly important material class used in spin-electronic devices. The technique has been applied to a variety of materials where the spin polarization at the Fermi level ranges from 45 to 98%: Ni, Co(2)MnSi, Fe(3)O(4), La(0.66)Sr(0.33)MnO(3) and CrO(2).

Transverse spin Seebeck effect versus anomalous and planar Nernst effects in Permalloy thin films.

Transverse magnetothermoelectric effects are studied in Permalloy thin films grown on MgO and GaAs substrates and compared to those grown on suspended SiN(x) membranes. The transverse voltage along platinum strips patterned on top of the Permalloy films is measured versus the external magnetic field as a function of the angle and temperature gradients. After the identification of the contribution of the planar and anomalous Nernst effects, we find an upper limit for the transverse spin Seebeck effect, which is several orders of magnitude smaller than previously reported.

Thermally driven spin and charge currents in thin NiFe2O4/Pt films

We present results on the longitudinal spin Seebeck effect (LSSE) shown by semiconducting ferrimagnetic NiFe2O4/Pt films from room temperature down to 50K base temperature. The temperature dependence of the conductivity has been studied in parallel to obtain information about the origin of the electric potentials detected at the Pt coverage of the ferrimagnet in order to distinguish the LSSE from the anomalous Nernst effect. Furthermore, the dependence of the LSSE on temperature gradients as well as the influence of an external magnetic field direction is investigated.

Exchange interactions and Curie temperatures of Mn2CoZ compounds.

The generalized Heusler compounds Mn(2)CoZ (Z = Al, Ga, In, Si, Ge, Sn, Sb) with the Hg(2)CuTi structure are of great interest due to their half-metallic ferrimagnetism. The complex magnetic interactions between the constituents are studied by means of first principles calculations of the Heisenberg exchange coupling parameters, and Curie temperatures are calculated from those. Due to the direct Mn-Mn exchange interaction in Mn(2)CoZ, the Curie temperature decreases, although the total moment increases when the valence electron number Z is increased. The exchange interactions are dominated by a strong direct exchange between Co and its nearest neighbor Mn on the B site, which is nearly constant. The coupling between the nearest neighbor Mn atoms scales with the magnetic moment of the Mn atom on the C site. Calculations with different lattice parameters suggest a negative pressure dependence of the Curie temperature, which follows from the decreasing magnetic moments. Curie temperatures of more than 800 K are predicted for Mn(2)CoAl (890 K), Mn(2)CoGa (886 K), and Mn(2)CoIn (845 K).

Large tunnel magnetoresistance in tunnel junctions with Co2MnSi∕Co2FeSi multilayer electrode

Two kinds of magnetic tunnel junctions with Co2FeSi electrodes are compared. Using Co2FeSi single layers a tunnel magnetoresistance of 52% is reached, whereas the magnetization of the Co2FeSi is only 75% of the expected value. By using [Co2MnSi∕Co2FeSi]x10 multilayer electrodes the magnetoresistance can be increased to 114% and the full bulk magnetization is reached. All junctions show an inverse tunnel magnetoresistance, when the electrons are tunneling from the Co–Fe into the Heusler compound electrode. This results from a special band structure feature of full Heusler compounds, which is robust even for atomic disorder in the films.

Ab initio prediction of ferrimagnetism, exchange interactions and Curie temperatures in Mn2TiZ Heusler compounds

The Heusler compounds Mn(2)TiZ (Z = Al, Ga, In, Si, Ge, Sn, P, As, Sb) are of great interest due to their potential ferrimagnetic properties and high spin polarization. Here, we present calculations of the structural and magnetic properties of these materials. Their magnetic moment follows the Slater-Pauling rule m = N(V) - 24. None of them is actually a perfect half-metallic ferrimagnet, but some exhibit more than 90% spin polarization and Curie temperatures well above room temperature. The exchange interactions are complex; direct and indirect exchange contributions are identified. The Curie temperature scales with the total magnetic moment, and it has a positive pressure dependence. The role of the Z element is investigated: it influences the properties of the compounds mainly via its valence electron number and its atomic radius, which determines the lattice parameter. Based on these results, Mn(2)TiSi, Mn(2)TiGe, and Mn(2)TiSn are proposed as candidates for spintronic applications.

Inelastic electron tunneling spectroscopy and bias voltage dependence of magnetic tunnel junctions with polycrystalline Co2MnSi electrode

Spintronics needs half-metallic materials implemented in technologically relevant devices. We prepare Co2MnSi/AlOx/Co7Fe3 junctions showing a tunneling magnetoresistance of 94.6% at 1 mV and 20 K. Their inelastic electron tunneling spectra at 20 K show typical magnon and phonon excitations in the electrode and the barrier and an additional shoulder around −22 mV not observed in Co7Fe3/AlOx/Ni81Fe19 reference junctions. Furthermore, the bias voltage and temperature dependence of the tunneling magnetoresistance is considerably larger than for the reference junctions. The transport properties are discussed with respect to a variety of current contributions associated with the structural and magnetic properties of the Co2MnSi/AlOx interface.

Ferrimagnetism and disorder of epitaxial Mn2−xCoxVAl Heusler compound thin films

The quaternary full Heusler compound Mn{sub 2-x}Co{sub x}VAl with x = 1 is predicted to be a half-metallic antiferromagnet. Thin films of the quaternary compounds with x = 0-2 were prepared by dc and RF magnetron co-sputtering on heated MgO (0 0 1) substrates. The magnetic structure was examined by x-ray magnetic circular dichroism and the chemical disorder was characterized by x-ray diffraction. Ferrimagnetic coupling of V to Mn was observed for Mn{sub 2}VAl (x = 0). For x = 0.5, we also found ferrimagnetic order with V and Co antiparallel to Mn. The observed reduced magnetic moments are interpreted with the help of band structure calculations in the coherent potential approximation. Mn{sub 2}VAl is very sensitive to disorder involving Mn, because nearest-neighbour Mn atoms couple antiferromagnetically. Co{sub 2}VAl has B2 order and has reduced magnetization. In the cases with x {ge} 0.9 conventional ferromagnetism was observed, closely related to the atomic disorder in these compounds.

Evolution of the dielectric breakdown in Co/Al2O3/Co junctions by annealing

The temperature and dielectric stability of magnetic tunnel junctions are important requirements for magnetic memory devices and their integration in the semiconductor process technology. We have investigated the changes of the tunneling magnetoresistance (TMR), the barrier properties (height, thickness, and asymmetry) and the dielectric stability upon isochronal annealing up to 410 °C in Co/Al2O3/Co junctions with an artificial antiferromagnet as a pinning layer. Besides a small decrease of the TMR signal after annealing up to 230 °C, a strong decrease between 300 and 350 °C is found. According to Auger and transmission electron microscopy investigations, this decrease is mainly due to interdiffusion of the metallic layers. The dielectric breakdown is characterized by voltage ramp experiments. The size-averaged breakdown voltage improves from 1.35 V for the as prepared junctions to 1.55 V by annealing at 300 °C. At higher temperatures the breakdown voltage decreases strongly to 0.8 V (at 380 °C). Simulta...