Guohua Liu

15158A SP6T RF switch based on IBM SOI CMOS technology

This paper presents the design of single-pole six-throw (SP6T) RF switch with IBM 0.18 μm SOI CMOS technology, which can be widely used in a wireless communication system with its high performance and low cost. The circuit is designed and simulated by using an idea that the total load is divided into six branches and SOI special structures. The insertion loss is less than 0.6 dB, isolation is more than 30 dB, the input power P0.1dB for 0.1 dB compression point is more than 37.5 dBm, IIP3 is more than 70 dBm, the 2nd and the 3rd harmonic compressions are more than 96 dBc, and the control voltage is (+2.46 V, 0, −2.46 V) in the frequency from 0.1 to 2.7 GHz.

A broadband high-efficiency Doherty power amplifier using symmetrical devices

This paper proposes a method for broadband and high-efficiency amplification of Doherty power amplifier (DPA) using symmetric devices. In order to achieve the perfect load modulation, the carrier amplifier output circuit total power length is designed to odd multiple of 90°, and the peak amplifier output total power length is designed to even multiple of 180°. The proposed method is demonstrated by designing a broadband high-efficiency DPA using identical 10-W packaged GaN HEMT devices. Measurement results show that over 51% drain efficiency is achieved at 6-dB back-off power, over the frequency band of 1.9–2.4 GHz.

Bandwidth enhancement of three-device Doherty power amplifier based on symmetric devices

This paper proposes a method for extending the bandwidth of na three-device Doherty power amplifier (DPA) based on symmetric devices. n?/4 transmission lines are inserted between each peaking amplifier output nand carrier amplifier output to compensate load impedance of carrier amplifier. nIn order to achieve perfect load modulation, carrier amplifier output ncircuit total electrical length is designed to 90 degrees, and the peak amplifier noutput total electrical length is designed to 180 degrees. The proposed nmethod is demonstrated by designing a three-device broadband DPA using nthree 10-W packaged GaN HEMT devices. Measurement results show that nover 40% drain efficiency is achieved at 9-dB back-off power, over the nfrequency band of 1.45–2.35 GHz, accounting for 46% fractional bandwidth.

A Doherty power amplifier with extended efficiency and bandwidth

This paper proposes a modified Doherty power amplifier (DPA) configuration for bandwidth and efficiency operations. To mitigate the efficiency degradation resulting from the incomplete load modulation network (LMN) and the knee voltage effect, the carrier transistor’s optimum load impedances based on related constant voltage standing wave ratio (VSWR) circle theory are introduced. Meanwhile, a innovative LMN with broadband matching technologies is adopted, which plays a guiding role on the bandwidth expansion from the theoretical point of view. In order to verify the practical feasibility of the design scheme, two 10W GaN HEMT transistors are used to design a broadband DPA. The measurement results show that the working bandwidth of the power amplifier is from 1.6GHz to 2.6GHz. The saturated output power of the whole frequency band is about 41.7–44 dBm and the drain efficiency (DE) is more than 50.8% at the input power of 33 dBm. In addition, the DE is 41.5–45% at 6-dB back-off power. Measurement results verify that the proposed enhancement techniques of bandwidth and efficiency are effective for DPA.

Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit

The design, implementation, and measurements of a high efficiency and high power wideband GaN HEMT power amplifier are presented. Package parasitic effect is reduced significantly by a novel compensation circuit design to improve the accuracy of impedance matching. An improved structure is proposed based on the traditional Class-F structure with all even harmonics and the third harmonic effectively controlled, respectively. Also the stepped-impedance matching method is applied to the third harmonic control network, which has a positive effect on the expansion bandwidth. CGH40025F power transistor is utilized to build the power amplifier working at 0.8 to 2.7u2009GHz, with the measured saturated output power 20–50u2009W, drain efficiency 52%–76%, and gain level above 10u2009dB. The second and the third harmonic suppression levels are maintained at −16 to −36u2009dBc and −16 to −33u2009dBc, respectively. The simulation and the measurement results of the proposed power amplifier show good consistency.

Non-reciprocal CRLH transmission line on substrate YIG

In this work, the modelling of composite right/left-handed transmission line and the CRLH transmission line theory have been studied. Then a parametric study of this components on YIG (with and without field) has been driven. Both experimental and simulated scattering parameters are shown, and the corresponding propagation constants are given, that enables to identify the different frequency bands: left-handed band, right-handed band and bandgap. This non-reciprocal metamaterials has potential to be used in radio frequency integrated circuits.

Design and fabrication of tunneling magnetic flux controlled memristor emulator

In this work, a tunneling magnetic flux controlled memristor emulator is presented. It imitates the behavior of the memristor with off-the-shelf solid state components. Two current conveyors, a multiplier, an IC with four operational amplifiers and several lumped-components are employed in the emulator. The two terminals of the emulator is float. The measured results with periodic unbalance input voltage are consistent with the SPICE simulation ones. The emulator provides an alternative solution of memristor model in real circuit applications.

High efficiency power amplifier for Beidou satellite navigation system

In this paper, high efficiency power amplifier for Beidou satellite navigation system is presented. The continuous Class-F PAs will be promising candidate for performances of broadband efficiency and power. Meanwhile, stability networks are also integrated into the layout to prevent low-frequency oscillations. Cree GaN HEMT CGH40010F is used in design of proposal PA. Simulation results show drain efficiency from 63% to 69% and output powers from 11.3-12.3 W over frequency of 1.1 to 1.7 GHz.

Class-F power amplifier with 82.9% maximum PAE at 1.89GHz for LTE applications

A GaN HEMT class-F power amplifier (PA) achieving a high maximum power added efficiency (PAE) is presented. The class-F PA exhibits maximum PAE of 82.9% with an output power of 39dBm at 1.89GHz. The PA shows PAE higher than 75% over 100MHz frequency range from 1.8GHz to 1.9GHz. Source-pull and load-pull techniques in large signal analysis were conducted to satisfy the optimum load resistance at fundamental frequency, second and third harmonics.

Design and Fabrication of Ultra-Wideband Power Amplifier Based on GaN HEMT

The research of an ultra-broadband power amplifier based on TGF2023-2-02 GaN HEMT which operates in the frequency ranging from 3 GHz to 8 GHz, is presented in this paper. The transistor of GaN HEMT is modeled and a frequency compensation and multi-side impedance matching approach are adopted for broadband impedance matching of amplifier. And a fan shaped micro strip line is implemented in the input matching network to achieve the wideband higher gain features. The measured results show that the amplifier module provided more than 37 dBm output power with minimum small signal gain of 9.8 dB over 3–8 GHz. The saturated output power is 38.3 dBm under DC bias of Vds = 28 V, Vgs = ?2.75 V at the frequency of 5 GHz.