Guoju Wang

Diode-pumped passively dual-wavelength Q-switched Nd:GYSGG laser using graphene oxide as the saturable absorber.

The performance of a diode end-pumped passively Q-switched dual-wavelength Nd:GYSGG laser operating at 1057.28 and 1060.65 nm with graphene oxide as the saturable absorber was demonstrated. The maximum dual-wavelength average output power of 521 mW was achieved under the absorbed pump power of 5.4 W, corresponding to the optical-to-optical conversion and slope efficiency of 9.8% and 21%, respectively. The minimum pulse width was 115 ns with a pulse repetition rate of 338 kHz.

Passively Q-switched Nd:GdTaO4 laser by graphene oxide saturable absorber

Abstract. We experimentally demonstrated a laser diode-pumped Q-switched Nd:GdTaO4 crystal laser at 1066 nm using a multilayer graphene oxide as the saturable absorber (GOSA). The GOSA is fabricated by transferring the liquid-phase-exfoliated GO nanosheets onto a K9 glass substrate. When the GOSA was inserted into the plano–plano laser cavity, a stable Q-switched laser operation is achieved with a maximum average output power of 0.382 W and repetition rate of 362 kHz. The shortest pulse duration is 194 ns and the single pulse energy is about 1.05 μJ.

Dual-wavelength passively Q-switched Nd:GYSGG laser by tungsten disulfide saturable absorber.

A dual-wavelength passively Q-switched Nd:GYSGG laser using vacuum evaporating tungsten disulfide (WS2) as a saturable absorber was demonstrated for the first time to the best of our knowledge. The WS2 saturable absorber was prepared simply by evaporating nanometer WS2 powders onto a quartz substrate in a vacuum. By inserting the WS2 saturable absorber into the laser cavity, stable Q-switched laser operation was achieved with a maximum average output power of 367 mW, a pulse repetition rate of 70.7 kHz, the shortest pulse width of 591 ns, and pulse energy of about 1.05 μJ. By vacuum evaporation method, a high-quality WS2 saturable absorber can be produced, and it seems to be a suitable method for fabrication of 2D transition metal dichalcogenides.

Dual-wavelength self-Q-switched Nd:GYSGG laser

A dual-wavelength self-Q-switched operation of Nd:GYSGG laser with different output couplers is proposed and demonstrated. In self-Q-switched operation, two laser lines between 1056.86 nm and 1060.23 nm were found. Under the pump power of 4 W, the shortest pulse width of 2.02 μs was obtained with a maximum average output power of 565 mW and the optical conversion efficiency of 14.13%. The pulse repetition rate and single pulse energy were 50.2 kHz and 11.25 μJ, respectively. The system is very stable and suitable for generation of multi-wavelength pulses.

Cavity-dumped mode-locked Nd:GdVO4 laser at low repetition rate

We report a cavity-dumped mode-locked Nd:GdVO4 laser with semiconductor saturable absorber mirrors at low repetition rate. In this laser system, a single mode-locked laser pulse is generated, amplified and cavity-dumped by means of electro-optic modulator at 1 to 10 Hz repetition rate. The energy of the pulse is about 150 nJ and the pulse duration is determined to be 10 ps.

Passively mode-locked Nd:GGG laser with a semiconductor saturable absorber mirror

The mode-locking operation of the Nd:GGG crystal with a semiconductor saturable absorber mirror (SESAM) was demonstrated. Continuous wave (CW) mode-locking was obtained with the pulse duration of 11 ps and the pulse repetition rate of 40.38 MHz. At 7 W of pump power, the maximum average output power of 1.1 W was obtained with the slope efficiency of 18.1%.