H.D. Sun

Low-loss 1.3um GaInNAs saturable bragg reflector for high-power picosecond neodymium lasers

A novel low-loss, single-step-growth 1.3‐µm GaInNAs saturable Bragg reflector mode-locking element has been developed. Combined radial thickness and postgrowth annealing control have permitted a tuning range of 46 nm for passive mode locking to be demonstrated from one wafer. With this structure, stabilized mode locking was obtained from quasi-cw diode-pumped Nd:YLF and Nd:YALO lasers operating at 1314 and 1342 nm, respectively, with average on-time output powers of as much as 20 W and pulse durations as low as 22 ps.

1.3 /spl mu/m GaInNAs monolithic vertical-cavity semiconductor optical amplifier

We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

Amplification and laser action in diode-pumped 1.3 /spl mu/m GaInNAs vertical-cavity structures

We report fibre-coupled CW diode pumping of 1.3 /spl mu/m GaInNAs/GaAs vertical-cavity semiconductor optical amplifiers (VCSOAs) and surface emitting lasers (VCSELs). The GaInNAs/GaAs structures are monolithic and are specifically designed for optical pumping, offering advantages in design simplification and added functionality. They allow us to demonstrate up to 1.09 dB of amplification and up to 213 /spl mu/W of 1297.2 nm laser emission. Both the 980 nm pump light and 1.3 /spl mu/m signal are coupled to/from the devices by fibers, giving promising systems-compatible demonstrators of GaInNAs-based amplifier technology.

Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector

We report the first demonstration of a passively mode-locked femtosecond Cr4+:YAG laser incorporating a GaInNAs saturable Bragg reflector to mode lock around 1500nm. 132fs pulses were generated with an output power of 140mW.

Femtosecond pulse generation at 1530nm using a GaInNAsSb SESAM

We describe the operation of a femtosecond Cr4+:YAG laser that has been mode locked using a novel GaInNAsSb SESAM. 230 fs pulses were generated at an average output power of 280 mW.

Spectral Narrowing and Locking of Vertical External-cavity Surface-emitting Lasers Using a Volume Bragg Grating

We demonstrate that using a volume Bragg grating as an output coupler in a vertical external cavity surface emitting laser which is thermally managed using an intra-cavity diamond heatspreader improves and locks its spectral characteristics

1.3 /spl mu/m CW GaInNAs VCSEL giving 4.1 mW single transverse mode power

In this paper, we have demonstrated fibre coupled-diode pumping operation of a six QW GaInNAs/GaAs VCSEL showing performance of up to 4.1 mW output coupled into a single-mode fibre at 10/spl deg/C at 1290.7 nm. Laser emission was observed up to a temperature of 95/spl deg/C, and the temperature shift is 0.1 nm/K. The VSCEL structure was grown by solid-source MBE using a nitrogen plasma.