H. J. Haugan

Band gap tuning of InAs/GaSb type-II superlattices for mid-infrared detection

The superlattice (SL) of a 40 period InAs∕GaSbSL structure were varied around the 20.5AInAs∕24AGaSb design in order to produce a device with an optimum mid-infrared photoresponse and a sharpest photoresponse cutoff. The samples for this study were grown by molecular beam epitaxy with precisely calibrated growth rates. Varying individual layer width around the nominal design, we were able to systematically change the photoresponse cutoff wavelength between 4.36 to 3.45um by decreasing the InAs width from 23.5 to 17.5A, and between 4.55 to 4.03μm by increasing the GaSb width from 18 to 27A. Therefore, the cutoff changes faster with decreasing InAs rather than increasing GaSb width. However, increasing GaSb width more effectively enhances the sharpness of photoresponse near band edge. The effect of design parameters on the photoresponse cutoff and other effects are explained by a nonperturbative, modified envelope function approximation (EFA) calculation that includes the interface coupling of heavy, light, ...

Demonstration of interface-scattering-limited electron mobilities in InAs/GaSb superlattices

The in-plane transport in InAs∕GaSb type-II superlattices (SLs) is a sensitive indicator of SL growth quality and of the eventual performance of devices made from these materials. The in-plane mobility of electrons that move predominantly in the InAs layer is affected by a number of intrinsic and extrinsic scattering mechanisms, including interface roughness scattering (IRS). The hallmark of classic IRS-limited transport in SLs and quantum wells is the sixth power dependence of mobility on layer width. While IRS-limited transport was demonstrated in a number of SL and quantum well systems, it has never been demonstrated in the important InAs∕GaSb SL material. In this paper, we perform temperature dependent Hall effect measurements on a series of InAs∕GaSb SLs with a fixed GaSb layer width and a variable InAs layer width d. The low temperature (10K) in-plane electron mobilities μ as a function of d behave as μ∝d6.20, which follows the classic sixth power dependence expected from theory. At the same time, t...

Optimization of mid-infrared InAs∕GaSb type-II superlattices

The effect of small changes in GaSb layer width on the photoresponse spectrum of 20.5AInAs∕InSb-interfaces∕XA GaSb type-II superlattice (SL) suitable for mid-infrared detection was investigated. By decreasing the GaSb width X from 27 to 18A, the cut-off wavelength was increased from 4.03 to 4.55μm. This decrease of the SL band gap and other effects of the design changes on photoresponse spectrum with narrower GaSb layers are explained by a nonperturbative, modified envelope function approximation calculation that includes the interface coupling of heavy, light, and spin–orbit holes resulting from the in-plane asymmetry at InAs∕GaSb interfaces.

Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors

The effect of interface anisotropy on the electronic structure of InAs/GaSb type-II superlattices is exploited in the design of thin-layer superlattices for mid-IR detection threshold. The design is based on a theoretical envelope function model that incorporates the change of anion and cation species across InAs/GaSb interfaces, in particular, across the preferred InSb interface. The model predicts that a given threshold can be reached for a range of superlattice periods with InAs and GaSb layers as thin as a few monolayers. Although the oscillator strengths are predicted to be larger for thinner period superlattices, the absorption coefficients are comparable because of the compensating effect of larger band widths. However, larger intervalence band separations for thinner-period samples should lead to longer minority electron Auger lifetimes and higher operating temperatures in p-type SLs. In addition, the hole masses for thinner-period samples are on the order the free-electron mass rather than being effectively infinite for the wider period samples. Therefore, holes should also contribute to photoresponse. A number of superlattices with periods ranging from 50.6 to 21.2 Å for the 4 μm detection threshold were grown by molecular beam epitaxy based on the model design. Low temperature photoluminescence and photoresponse spectra confirmed that the superlattice band gaps remained constant at 330 meV although the period changed by the factor of 2.5. Overall, the present study points to the importance of interfaces as a tool in the design and growth of thin superlattices for mid-IR detectors for room temperature operation.

Effect of interfacial formation on the properties of very long wavelength infrared InAs/GaSb superlattices

In InAs/GaSb superlattices (SLs) designed for infrared detection, the interfacial layers comprise approximately 10%–15% of the heterostructure. As interdiffusion into the InAs and GaSb layers is considered, this percentage is expected to be even higher. Although the primary goal for engineering these transient layers is to balance the SL strain to the GaSb substrate, the interfacial quality can impact the performance of the SL in other ways as well. Many believe that the majority of nonradiative defects that shorten carrier lifetime can be generated from the SL interfaces or regions near them due to the poor interface engineering. Because the degree of lattice mismatch tends to be higher in very long wavelength infrared InAs/GaSb designs, the approach tuning growth parameters to optimize the strain balancing process is different from that for midinfrared SLs. To investigate this optimization, a systematic approach was applied to achieve strain compensated 16 monolayers (MLs) InAs/7 MLs GaSb SLs aimed for ...

Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection

We explore the optimum growth space for a 47.0 A InAs/21.5 A Ga0.75In0.25Sb superlattices (SLs) designed for the maximum Auger suppression for a very long wavelength infrared gap. Our growth process produces a consistent gap of 50 ± 5 meV. However, SL quality is sensitive to the growth temperature (Tg). For the SLs grown at 390−470 °C, a photoresponse signal gradually increases as Tg increases from 400 to 440 °C. Outside this temperature window, the SL quality deteriorates very rapidly. All SLs were n-type with mobility of ∼10 000 V/cm2 and 300 K recombination lifetime of ∼70 ns for an optimized SL.

Carrier mobility as a function of carrier density in type-II InAs/GaSb superlattices

We report on a study of the in-plane carrier mobility in InAs/GaSb superlattices as a function of carrier density. Instead of using a number of differently doped samples, we use the persistent-photoconductivity effect to vary the carrier density over a wide range from n- to p-type in single samples and perform Hall effect measurements. Hence, our data are not obscured by sample to sample nonuniformities. We demonstrate that low-temperature in-plane mobilities are limited by screened interface roughness scattering (IRS), although present models of two-dimensional carrier screening of IRS lead to a limited agreement with our data.

Quantitative analysis of interfacial strain in InAs/GaSb superlattices by aberration-corrected HRTEM and HAADF-STEM.

The strain distribution across interfaces in InAs/GaSb superlattices grown on (100)-GaSb substrates is investigated by aberration corrected transmission electron microscopy. Atomic resolution images of interfaces were obtained by conventional high resolution transmission electron microscopy (HRTEM), using the negative spherical-aberration imaging mode, and by scanning transmission electron microscopy (STEM), using the high-angle annular dark-field (HAADF) imaging mode. The local atomic displacements across interfaces were determined from these images using the peak pair algorithm, from which strain maps were calculated with respect to a reference lattice extracted from the GaSb substrate region. Both techniques yield consistent results, which reveal that the InAs-on-GaSb interface is nearly strain balanced, whereas the GaSb-on-InAs interface is in tensile strain, indicating that the prevalent bond type at this interface is Ga-As. In addition, the GaSb layers in the superlattice are compressively strained indicating the incorporation of In into these layers. Further analysis of the HAADF-STEM images indicates an estimated 4% In content in the GaSb layers and that the GaSb-on-InAs interface contributes to about 27% of the overall superlattice strain. The strain measurements in the InAs layers are in good agreement with the theoretical values determined from elastic constants. Furthermore, the overall superlattice strain determined from this analysis is also in good agreement with the measurements determined by high-resolution X-ray diffraction.

Post growth annealing study on long wavelength infrared InAs/GaSb superlattices

The impact of post growth annealing on the electrical properties of a long wavelength infrared type-II superlattice (SL) was explored. Quarters of a single SL wafer were annealed at 440 °C, 480 °C, and 515 °C, respectively for 30 min. Changes in the electrical properties were followed using spectral photoconductivity, temperature dependent Hall effect, and time-resolved pump-probe measurements. The bandgap energy remained at ∼107 meV for each anneal, and the photoresponse spectra showed a 25% improvement. The carrier lifetime increased from 12 to ∼15 ns with annealing. The electron mobility was nearly constant for the 440 °C and 480 °C anneals, and increased from ∼4500 to 6300 cm2/Vs for the 515 °C anneal.

Preparation of thin film GaAs on glass by pulsed-laser deposition

One of the most straightforward methods possible is presented and investigated to form thin film GaAs. The film was deposited on unheated glass in vacuum (10-6 Torr) by the ablation from a GaAs wafer with the emission of a pulsed Nd:YAG laser (532 nm, 6 ns, 10 Hz). The photoluminescence, photocurrent, transmission and micro-Raman measurements of the films demonstrate that films with promising optoelectronic properties have been formed. Most importantly, from the viewpoint of light emitting and optoelectronic device production, the films show photoluminescence of comparable intensity with the bulk material without emissions owing to impurities, although the films show a rather flat absorption edge which indicates tail states. The observed photocurrent was in the μA/W range driven by rather moderate electric fields on the order of 100 V/cm. Concerning the material quality, the films have an extremely smooth surface as demonstrated with scanning electron microscopy. Grown GaAs films on glass substrates were amorphous evidenced by X-ray diffraction measurements, however, micro-Raman measurements showed crystalline phonon modes, suggesting that localized crystalline structure might co-exist in amorphous GaAs films.