H. Niemiec

Silicon ultra fast cameras for electron and γ sources in medical applications

Abstract SUCIMA (Silicon Ultra fast Cameras for electron and γ sources In Medical Applications) is a project approved by the European Commission with the primary goal of developing a real time dosimeter based on direct detection in a Silicon substrate. The main applications, the detector characteristics and technologies and the data acquisition system are described.

Hybrid active pixel sensors and SOI inspired option

Abstract Two novel pixel sensor concepts for future linear collider applications are presented in this paper: a hybrid pixel sensor characterized by a layout improving the single point resolution and a monolithic detector inspired by silicon on insulator (SOI) technology. The results of charge collection studies for the first prototypes of hybrid pixel sensors with interleaved pixels are reported and the new detector test structures are introduced. The technology and the readout architecture design for SOI sensors are also discussed.

Monolithic active pixel sensor realized in SOI technology—concept and verification

The paper presents the concept and the verification of a novel silicon monolithic active pixel detector realized in the SOI technology. The reliability and the basic electrical characteristics of the sensor are studied and the sensor sensitivity to the ionising radiation is investigated in details.

Development of monolithic active pixel sensor in SOI Technology fabricated on the wafer with thick device layer

Monolithic active pixel detectors fabricated in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. The fully depleted sensing diode has been manufactured under buried oxide (BOX) while read-out circuitry occupies upper silicon layer (‘device layer’). The development of the SOI detectors of ionizing radiation was started as a part of the SUCIMA project. During the project, it was proved that a monolithic SOI detector is a viable option for high-energy physics and medicine. The early prototypes suffered from significant leakage currents and soft breakdowns. These effects limited yield of production. Moreover, the p-wells (formed within the device layer and extended to the interface with the BOX), caused some local potential wells below the BOX at the top of depleted sensor area reducing the effective charge collection efficiency. The use a thicker device layer and optimized technology appeared to be a remedy.

Fully depleted monolithic active pixel sensor in SOI technology

An active pixel detector, which exploits wafer-bonded silicon on insulator (SOI) substrates for integration of the readout electronics with the pixel detector, is presented. The main concepts of the proposed monolithic sensor and the preliminary tests results with ionising radiation sources are addressed. Silicon on insulator is an alternative solution for a monolithic active pixel detector, which allows integrating a fully depleted sensor and front-end electronics active layers into one silicon wafer. The main idea of the sensor relies on the use of both monolithic silicon layers (device and support layers) of the SOI substrate for fabrication of pixel detector diodes and readout electronics. Such detectors can find wide range of applications, not only in particle physics but also in medicine, space science and many other disciplines. The sensor structure and the readout configuration have been developed and the measurements of a dedicated test structure have validated the new technology of the SOI detector. Small SOI sensor matrices with 8 by 8 channels have been recently produced and tested.

Design, Fabrication and Characterization of SOI Pixel Detectors of Ionizing Radiation

Development of a novel monolithic active pixel image sensor based on SOI technology is presented. Active pixel test matrices have been recently manufactured and are under extensive examination. This paper describes the concept of the device and shows the most recent results.

Monolithic active pixel detector in SOI technology - preliminary results

Silicon detectors, and especially silicon pixel detectors, have found wide range of applications, not only in particle physics but also in medicine, space science and many other disciplines. Their attractive features, like good spatial and energy resolution, are motivation for the continuous works on new structural solutions and fabrication processes of these devices. In this paper the realization of a novel silicon active pixel detector, which exploits Silicon on Insulator (SOI) substrate for the integration of the detector and readout electronics, is presented. The sensor structure and the readout configuration have been developed and the measurements of a dedicated test structure have validated the new technology of the SOI detector. Preliminary tests with an infrared laser light and radioactive source confirmed also the detector sensitivity to the ionizing radiation.