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Featured researches published by H. Pinto.


Physica Status Solidi (a) | 2010

Mechanisms of doping graphene

H. Pinto; R. Jones; J. P. Goss; P.R. Briddon

We distinguish three mechanisms of doping graphene. Density functional theory is used to show that electronegative molecules like tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) and electropositive metals like K dope graphene p- and n- type, respectively. These dopants are expected to lead to a decrease in carrier mobility arising from Coulomb scattering but without any hysteresis effects. Secondly, a novel doping mechanism is exhibited by Au which dopes bilayer graphene but not single layer. Thirdly, electrochemical doping is effected by redox reactions and can result in p-doping by humid atmospheres and n-doping by NH 3 and toluene.


Journal of Physics: Condensed Matter | 2009

Theory of the birefringence due to dislocations in single crystal CVD diamond

H. Pinto; R. Jones

Single crystal diamond grown by chemical vapour deposition (CVD) often exhibits strain induced birefringence arising from bundles of edge dislocations lying almost parallel to the [001] growth axis. The birefringent pattern changes when the crossed-polarizers are rotated with respect to the underlying lattice. For polarizers parallel to ⟨110⟩ directions, the birefringence pattern consists of four bright petals with dark arms along ⟨110⟩. For polarizers parallel to ⟨100⟩, the birefringence pattern consists of eight petals of weaker intensity with dark arms along ⟨110⟩ and ⟨100⟩ directions. We evaluate the birefringence intensity by using isotropic elasticity theory and find that these patterns can be explained by a specific dislocation arrangement which is consistent with x-ray topographic studies.


Journal of Physics: Conference Series | 2011

Point and extended defects in chemical vapour deposited diamond

H. Pinto; R. Jones; J. P. Goss; P.R. Briddon

Homoepitaxially grown single crystal CVD diamond has a dislocation arrangement not seen in natural IIa diamond. Whereas in the latter, dislocations lie on (111) planes along [10] directions, dislocations in CVD diamond lie nearly along the [001] growth axis and are arranged in bundles with almost four fold rotational symmetry. Their large strain is easily seen in birefringence and we model the arrangements in the bundle to account for the singular behaviour of the birefringence when the polarisers are rotated with respect to the crystal. The optical absorption spectrum of brown CVD diamond displays a continuum similar to that found in brown IIa natural diamonds but in addition broad point defect induced bands. We investigate the suggestion that the 2.38 eV (560 nm) peak is related to VNH. We suggest that the breadth of these bands is related to the large structural change when the defect is excited.


Journal of Physics: Condensed Matter | 2009

p-type doping of graphene with F4-TCNQ

H. Pinto; R. Jones; J. P. Goss; P.R. Briddon


Materials Science in Semiconductor Processing | 2006

Formation energy and migration barrier of a Ge vacancy from ab initio studies

H. Pinto; João A. P. Coutinho; V.J.B. Torres; Sven Öberg; P.R. Briddon


Materials Science and Engineering B-advanced Functional Solid-state Materials | 2009

First principles study of point defects in titanium oxycarbide

H. Pinto; João A. P. Coutinho; Marta M. D. Ramos; F. Vaz; L. Marques


Physica Status Solidi (a) | 2012

On the diffusion of NV defects in diamond

H. Pinto; R. Jones; D.W. Palmer; J. P. Goss; P.R. Briddon; Sven Öberg


Applied Surface Science | 2009

Optical properties of titanium oxycarbide thin films

L. Marques; H. Pinto; Ana Cristina Fernandes; Oksana Banakh; F. Vaz; Marta M. D. Ramos


Physica Status Solidi (a) | 2011

Theory of the surface effects on the luminescence of the NV- defect in nanodiamond

H. Pinto; R. Jones; D.W. Palmer; J.O Goss; P.R. Briddon; Sven Öberg


Journal of Physical Chemistry C | 2015

Characterization of a Hexagonal Phosphorus Adlayer on Platinum (111)

Olli Heikkinen; H. Pinto; Godhuli Sinha; Sampsa K. Hämäläinen; Jani Sainio; Sven Öberg; P.R. Briddon; Adam S. Foster; Jouko Lahtinen

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R. Jones

University of Exeter

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Sven Öberg

Luleå University of Technology

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F. Vaz

University of Minho

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