H. R. Krishnamurthy

Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

We demonstrate electrochemical top gating of graphene by using a solid polymer electrolyte. This allows to reach much higher electron and hole doping than standard back gating. In-situ Raman measurements monitor the doping. The G peak stiffens and sharpens for both electron and hole doping, while the 2D peak shows a different response to holes and electrons. Its position increases for hole doping, while it softens for high electron doping. The variation of G peak position is a signature of the non-adiabatic Kohn anomaly at

Nonlocal Dynamical Correlations of Strongly Interacting Electron Systems

\Gamma

Dynamical cluster approximation: Nonlocal dynamics of correlated electron systems

. On the other hand, for visible excitation, the variation of the 2D peak position is ruled by charge transfer. The intensity ratio of G and 2D peaks shows a strong dependence on doping, making it a sensitive parameter to monitor charges.The recent discovery of graphene has led to many advances in two-dimensional physics and devices. The graphene devices fabricated so far have relied on SiO(2) back gating. Electrochemical top gating is widely used for polymer transistors, and has also been successfully applied to carbon nanotubes. Here we demonstrate a top-gated graphene transistor that is able to reach doping levels of up to 5x1013 cm-2, which is much higher than those previously reported. Such high doping levels are possible because the nanometre-thick Debye layer in the solid polymer electrolyte gate provides a much higher gate capacitance than the commonly used SiO(2) back gate, which is usually about 300 nm thick. In situ Raman measurements monitor the doping. The G peak stiffens and sharpens for both electron and hole doping, but the 2D peak shows a different response to holes and electrons. The ratio of the intensities of the G and 2D peaks shows a strong dependence on doping, making it a sensitive parameter to monitor the doping.

Can Correlations Drive a Band Insulator Metallic

We introduce an extension of the dynamical mean-field approximation (DMFA) that retains the causal properties and generality of the DMFA, but allows for systematic inclusion of nonlocal corrections. Our technique maps the problem to a self-consistently embedded cluster. The DMFA (exact result) is recovered as the cluster size goes to 1 (infinity). As a demonstration, we study the Falicov-Kimball model using a variety of cluster sizes. We show that the sum rules are preserved, the spectra are positive definite, and the nonlocal correlations suppress the charge-density wave transition temperature.

Systematic and Causal Corrections to the Coherent Potential Approximation

We recently introduced the dynamical cluster approximation (DCA), a technique that includes short-ranged dynamical correlations in addition to the local dynamics of the dynamical mean-field approximation while preserving causality. The technique is based on an iterative self-consistency scheme on a finite-size periodic cluster. The dynamical mean-field approximation (exact result) is obtained by taking the cluster to a single site (the thermodynamic limit). Here, we provide details of our method, explicitly show that it is causal, systematic, Phi derivable, and that it becomes conserving as the cluster size increases. We demonstrate the DCA by applying it to a quantum Monte Carlo and exact enumeration study of the two-dimensional Falicov-Kimball model. The resulting spectral functions preserve causality, and the spectra and the charge-density-wave transition temperature converge quickly and systematically to the thermodynamic limit as the cluster size increases.

Coulomb Interactions and Nanoscale Electronic Inhomogeneities in Manganites

We analyze the effects of the on-site Coulomb repulsion U on a band insulator using dynamical mean field theory (DMFT). We find the surprising result that the gap is suppressed to zero at a critical Uc1 and remains zero within a metallic phase. At a larger Uc2 there is a second transition from the metal to a Mott insulator, in which the gap increases with increasing U. These results are qualitatively different from Hartree-Fock theory which gives a monotonically decreasing but nonzero insulating gap for all finite U.

BCS-BEC crossover at T=0: A dynamical mean-field theory approach

The dynamical cluster approximation (DCA) is modified to include disorder. The DCA incorporates nonlocal corrections to local approximations such as the coherent potential approximation (CPA) by mapping the lattice problem with disorder, and in the thermodynamic limit, to a self-consistently embedded finite-sized cluster problem. It satisfies all of the characteristics of a successful cluster approximation. It is causal, preserves the point-group and translational symmetry of the original lattice, recovers the CPA when the cluster size equals one, and becomes exact as

Hysteresis in model spin systems

{N}_{c}\ensuremath{\rightarrow}\ensuremath{\infty}.

Van Hove scenario for cuprate superconductivity

We use the DCA to study the Anderson model with binary diagonal disorder. It restores sharp features and band tailing in the density-of-states, which reflect correlations in the local environment of each site. While the DCA does not describe the localization transition, it does describe precursor effects of localization.

Dynamics and transport properties of Kondo insulators

We study electronic inhomogeneities in manganites using simulations on a microscopic model with Coulomb interactions amongst two electronic fluids-one localized (polaronic), the other extended-and dopant ions. The long range Coulomb interactions frustrate phase separation induced by the large on site repulsion between the fluids. A single phase ensues which is inhomogeneous at a nanoscale, but homogeneous on mesoscales, with many features that agree with experiments. This, we argue, is the origin of nanoscale inhomogeneities in manganites, rather than phase competition or disorder effects.