Hai-Ming Ji

Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers

Temperature-dependent modulation characteristics of 1.3 mu m InAs/GaAs quantum dot (QD) lasers under small signals have been carefully studied at various bias currents. Based on experimental observations, it is found that the modulation bandwidth significantly increases when excited state (ES) lasing emerges at high temperature. This is attributed to additional photons emitted by ES lasing which contribute to the modulation response. A rate equation model including two discrete electron energy levels and the level of wetting layer has been used to investigate the temperature-dependent dynamic behavior of the QD lasers. Numerical investigations confirm that the significant jump for the small signal modulation response is indeed caused by ES photons. Furthermore, we identify how the electron occupation probabilities of the two discrete energy levels can influence the photon density of different states and finally the modulation rate. Both experiments and numerical analysis show that the modulation bandwidth of QD lasers at high temperature can be increased by injecting more carriers into the ES that has larger electron state degeneracy and faster carriers relaxation time than the ground state.

InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition

We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb flow rate is used, whereas the droplets are missing and the radial growth of the GaSb is enhanced due to a reduction in the diffusion length of the Ga adatoms when the TMSb flow rate is increased. Moreover, transmission electron microscopy measurements revealed that the GaSb shell coherently grew on the InAs core. The results obtained here show that the InAs/GaSb core-shell nanowires grown using the Si platform have strong potential in the fabrication of future nanometer-scale devices and in the study of fundamental quantum physics.

Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers

Experimental and theoretical study of the self-heating effect on the two-state lasing behaviors in 1.3-mu m self-assembled InAs-GaAs quantum dot (QD) lasers is presented. Lasing spectra under different injected currents, light-current (L-I) curves measured in continuous and pulsed regimes as well as a rate-equation model considering the current heating have been employed to analyze the ground-state (GS) and excited-state (ES) lasing processes. We show that the self-heating causes the quenching of the GS lasing and the ES lasing by the increased carrier escape rate and the reduced maximum modal gain of GS and ES.

Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers.

The carrier induced refractive index change and linewidth enhancement factor α due to ground-state (GS) and excited-state (ES) transitions have been compared by measuring the optical gain spectra from an InAs/GaAs quantum dot (QD) laser structure. It is shown that the ES transition exhibits a reduced α-factor compared to the value due to the GS transition. This result can be explained by the α-factor due to the ES transition having a smaller increase from the non-resonant carriers in the combined state of the wetting layer and InGaAs strain reducing layer than the α-factor increase due to the GS transition, since the relaxation time for carriers from the combined state of the wetting layer and InGaAs strain reducing layer to the ES is shorter than to the GS. The result reported here shows another advantage of using ES QD lasers for optical communication, in addition to their higher modulation speed.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts

We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed ⟨110⟩ directions on an [100]-oriented substrate, two ⟨100⟩ directions plus four ⟨111⟩ directions on an [110]-oriented substrate, and six equivalent ⟨112⟩ directions on an [111]-oriented substrate, which correspond to the projections of ⟨111⟩ family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p-n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III-V nanodevices.

Three-region characteristic temperature in p-doped quantum dot lasers

We have investigated the temperature dependence of threshold in p-doped 1.3 μm InAs/GaAs quantum dot (QD) lasers with ten layers of QDs in the active region. It is found that the dependence of threshold current density on the temperature within the temperature range from 10 to 90 °C can be divided into three regions by its characteristic temperature (T0): negative, infinite, and positive T0 regions. Furthermore, the T0 region width is dependent on the cavity length: the longer cavity length of the QD lasers correspondingly the wider T0 region. Additionally, for the broad area laser, the threshold modal gains of the lasers with different cavity lengths can be fitted by an empirical expression as a function of the threshold current density, when at the temperatures of 30, 50, and 70 °C. We find that the transparency current density (Jtr) remains almost unchanged under different temperatures according to the extracted parameters from these fitted results, which indicates that Jtr plays an important role in b...

Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells

We theoretically investigated the current-voltage characteristic of InAs/GaAs quantum dot (QD) intermediate band solar cells by changing the QD layer’s position in i-region. The open circuit voltage, short current density, fill factor, and conversion efficiency all vary with the position of QD layer. If the light generation coefficients through intermediate band (IB) are small, the IB mainly plays the role of a recombination energy level. If the light generation coefficients are improved, in order to ensure the highest QD layer performance, QD layer should be placed in an appropriate range.

Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer

We theoretically studied the role of a InGaAs and InAlAs strain-reducing layer (SRL) with different thicknesses and indium compositions covered on InAs/GaAs self-assembled quantum dots (QDs). The ground-state transition wavelength increases as the thickness and indium composition of the SRL increase. The energy separation between ground state and excited state can achieve the maximum by a proper design. The redshift is due to (1) the strain reducing in QD, (2) the potential barrier, and (3) effective mass reducing in SRL, but the latter two tend to cancel each other and the energy level separation is mainly determined by (2) and (3).

Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 1.55 μm

We report a broadband tunable external-cavity laser based on InAs/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. It is found that high AsH₃ flow during the interruption after QD deposition greatly promotes QD ripening, which improves the optical gain of QD active medium in lower energy states. Combined with anti-reflection/high-reflection facet coatings, a broadly tunable InAs/InP QD external-cavity laser was realized with a tuning range of 140.4 nm across wavelengths from 1436.6 nm to 1577 nm at a maximum output power of 6 mW.

High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy

We demonstrate high performance 2150 nm InAs/InGaAs/InP quantum well (QW) lasers grown by metalorganic vapor phase epitaxy. The laser structure consists of two InAs/InGaAs QWs, with a 30 μm-wide ridge waveguide and two cleaved cavity facets. The continuous wave operation at room temperature (RT) is achieved, with an output power of larger than 160 mW per facet and with a low threshold current density of 90.4 A/cm(2) per QW derived for the infinite cavity length. Under pulse injection mode, the maximal peak power per facet is as high as 1.35 W. By varying the cavity length, the lasing wavelength can be tuned in a range from 2142 nm to 2154 nm. Moreover, the highest operating temperature reaches up to 100 °C, and characteristic temperatures are 50 K (T(0)) and 132 K (T(1)) in the temperature range of 20-70 °C, respectively.