Shuai Luo

Reversible resistance switching in La0.225Pr0.4Ca0.375MnO3: The Joule-heat-assisted phase transition

The reversible resistance switching (RS) controlled by current pulse pairs, accompanied with an overshooting relaxation, is observed in bulk La(0.225)Pr(0.4)Ca(0.375)MnO(3). We demonstrate that the reversible RS effect is not the result of current-induced intrinsic transition of charge-ordered insulator (COI) into ferromagnetic metal (FMM) phase, but the outcome of Joule-heat-assisted transition between the FMM and COI phases. A local thermal-cycle assisted rearrangement of the FMM phase in the COI matrix is controllable by a current pulse, opening a possibility for multistate memory applications

Effect of B-site Al-doping on electric polarization in DyMnO3

We investigate the effect of Al-doping on the multiferroicity of DyMn1−xAlxO3. It is indicated that a slight doping (0.005≤x≤0.01) can significantly enhance the electric polarization which will be suppressed as x>0.03. The possible mechanism for the polarization enhancement is the rearrangement of the Mn spiral spin order upon the Al-doping. Our work demonstrates that the ferroelectricity of DyMnO3 is sensitive to the B-site nonmagnetic doping, allowing an unusual enhancement of the electric polarization.

Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

AbstractCatalyst-free, vertical array of InAs nanowires (NWs) are grown on Si (111) substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst-free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse optical (TO) mode of InAs NWs present a phonon frequency slightly lower than those of InAs bulk materials, which are speculated to be caused by the defects in the NWs. A surface optical mode is also observed for the InAs NWs, which shifts to lower wave-numbers when the diameter of NWs is decreased, in agreement with the theory prediction. The carrier concentration is extracted to be 2.25 × 1017 cm-3 from the Raman line shape analysis. A splitting of TO modes is also observed. PACS: 62.23.Hj; 81.07.Gf; 63.22.Gh; 61.46.Km

Enhanced multiferroicity in Mg-doped Ca3Co2−xMnxO6

Polycrystalline Ca3−xMgxCo2−yMnyO6 (y∼1.0) samples are prepared in order to investigate the A-site doping effect of Ca3Co2−yMnyO6 (y∼1.0). Compared with Ca3Co2−yMnyO6 (y∼1.0), the ferroelectric polarization and Curie point of Ca3−xMgxCo2−yMnyO6 (y∼1.0) at the maximal doping x∼0.3 are significantly enhanced. The magnetic order of Ca3−xMgxCo2−yMnyO6 (x∼0.3, y∼1.0) and thus ferroelectric order are more robust than the undoped compound. The slight lattice shrinking as a result of Mg substitution may contribute to the enhancement of exchange striction, leading to the changes in magnetic and ferroelectric properties.

InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition

We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb flow rate is used, whereas the droplets are missing and the radial growth of the GaSb is enhanced due to a reduction in the diffusion length of the Ga adatoms when the TMSb flow rate is increased. Moreover, transmission electron microscopy measurements revealed that the GaSb shell coherently grew on the InAs core. The results obtained here show that the InAs/GaSb core-shell nanowires grown using the Si platform have strong potential in the fabrication of future nanometer-scale devices and in the study of fundamental quantum physics.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts

We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed ⟨110⟩ directions on an [100]-oriented substrate, two ⟨100⟩ directions plus four ⟨111⟩ directions on an [110]-oriented substrate, and six equivalent ⟨112⟩ directions on an [111]-oriented substrate, which correspond to the projections of ⟨111⟩ family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p-n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III-V nanodevices.

Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 1.55 μm

We report a broadband tunable external-cavity laser based on InAs/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. It is found that high AsH₃ flow during the interruption after QD deposition greatly promotes QD ripening, which improves the optical gain of QD active medium in lower energy states. Combined with anti-reflection/high-reflection facet coatings, a broadly tunable InAs/InP QD external-cavity laser was realized with a tuning range of 140.4 nm across wavelengths from 1436.6 nm to 1577 nm at a maximum output power of 6 mW.

High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy

We demonstrate high performance 2150 nm InAs/InGaAs/InP quantum well (QW) lasers grown by metalorganic vapor phase epitaxy. The laser structure consists of two InAs/InGaAs QWs, with a 30 μm-wide ridge waveguide and two cleaved cavity facets. The continuous wave operation at room temperature (RT) is achieved, with an output power of larger than 160 mW per facet and with a low threshold current density of 90.4 A/cm(2) per QW derived for the infinite cavity length. Under pulse injection mode, the maximal peak power per facet is as high as 1.35 W. By varying the cavity length, the lasing wavelength can be tuned in a range from 2142 nm to 2154 nm. Moreover, the highest operating temperature reaches up to 100 °C, and characteristic temperatures are 50 K (T(0)) and 132 K (T(1)) in the temperature range of 20-70 °C, respectively.

Formation of AsxSb1-x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition

Metalorganic chemical vapor deposition growth of InAs/GaSb superlattices is reported using an AsxSb1?x plane that connects the InAs and GaSb layers to compensate the tensile strain introduced by the InAs layers. The effects of gas switching sequences for growing the AsxSb1?x planes on the interface structure and crystalline quality of InAs/GaSb superlattices were investigated by Raman scattering spectroscopy and X-ray diffraction. It is found that uniform interfaces and high-quality superlattice can be obtained by growing the AsxSb1?x planes through the exchange interaction of As and Sb atoms at the surfaces of InAs or GaSb layers.

Dynamic characteristics of two-state lasing quantum dot lasers under large signal modulation

Large signal modulation characteristics of the simultaneous ground-state (GS) and excited-state (ES) lasing quantum dot lasers are theoretically investigated. Relaxation oscillations of ‘0 → 1’ and ‘1 → 0’ in the GS lasing region (Region I), the transition region from GS lasing to two-state lasing (Region II) and the two-state lasing region (Region III) are compared and analyzed. It is found that the overshooting power and settling time in both Regions I and III decrease as the bias current increases. However, there exist abnormal behaviors of the overshooting power and settling time in Region II owing to the occurrence of ES lasing, which lead to fuzzy eye diagrams of the GS and ES lasing. Moreover, the ES lasing in Region III possesses much better eye diagrams because of its shorter settling time and smaller overshooting power over the GS lasing in Region I.