Haijing Cao

Semiconductor Package with Semiconductor Core Structure and Method of Forming Same

Semiconductor Device and Method of Forming Vertical Interconnect Structure in Substrate for IPD and Baseband Circuit Separated by High-Resistivity Molding Compound

Semiconductor device and method of forming high-frequency circuit structure and method thereof

Semiconductor device and method of forming integrated passive device module

Semiconductor Device and Method of Forming a Fan-Out Structure with Integrated Passive Device and Discrete Component

Semiconductor Device and Method of Embedding Integrated Passive Devices into the Package Electrically Interconnected Using Conductive Pillars

Semiconductor Device and Method of Forming an IPD over a High-Resistivity Encapsulant Separated from other IPDS and Baseband Circuit

Semiconductor Device Having Embedded Integrated Passive Devices Electrically Interconnected Using Conductive Pillars

Semiconductor Device and Method of Forming Shielding Layer over Integrated Passive Device Using Conductive Channels

Semiconductor device with integrated passive circuit and method of making the same using sacrificial substrate