Haiming Guo

Commensurate-incommensurate transition in graphene on hexagonal boron nitride

When a crystal is subjected to a periodic potential, under certain circumstances it can adjust itself to follow the periodicity of the potential, resulting in a commensurate state. Of particular interest are topological defects between the two commensurate phases, such as solitons and domain walls. Here we report a commensurate-incommensurate transition for graphene on top of hexagonal boron nitride (hBN). Depending on the rotation angle between the lattices of the two crystals, graphene can either stretch to adapt to a slightly different hBN periodicity (for small angles, resulting in a commensurate state) or exhibit little adjustment (the incommensurate state). In the commensurate state, areas with matching lattice constants are separated by domain walls that accumulate the generated strain. Such soliton-like objects are not only of significant fundamental interest, but their presence could also explain recent experiments where electronic and optical properties of graphene-hBN heterostructures were observed to be considerably altered.

Epitaxial growth and structural property of graphene on Pt(111)

We report on epitaxial growth of graphene on Pt(111) surface. It was found out that the proportion of different rotational domains varies with growth temperature and the graphene quality can be improved by adjusting both the growth temperature and ethylene exposure. Rippled and unrippled domains of high quality graphene are observed. The adhesive energy and electronic structure of two models, representing rippled and unrippled graphene, are obtained with density functional theory calculation, which shows that the interaction between graphene and Pt(111) surface is very weak and the electronic structure is nearly the same as that of a free standing graphene.

Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)

We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties.

Studies of graphene-based nanoelectromechanical switches

AbstractElectromechanical switch devices employing suspended graphene as movable elements have been developed. Their on and off states can be controlled by modulating the electrostatic force applied to the graphene. The devices exhibit on-off ratios of up to 104 and lifetimes of over 500 cycles. The prototype device demonstrates the feasibility of using multilayer graphene in electromechanical systems. Measurements of the mechanical properties of the free-standing monolayer graphene gave a value of 0.96 TPa for the Young’s modulus and a van der Waals force with silicon oxide of 0.17 nN/nm2.n

Self-assembly of C60 monolayer on epitaxially grown, nanostructured graphene on Ru(0001) surface

C60 molecules adsorbed on graphene/Ru(0001) substrate were investigated by scanning tunneling microscopy (STM) at 5u2009K. On high quality substrates, C60 molecules adopt a commensurate growth mode, leading to formation of a supramolecular structure with perfect periodicity and few defects. On under-annealed substrates with imperfections and domains, the molecules form the same closely packed hexagonal structures in spite of underlying corrugations, disorders or steps, indicating a weak molecule-substrate interaction—a conclusion that is also supported by DFT calculations. This system may be beneficial to the fabrication of carbon based devices and of other types of organic functional overlayers.

Graphene based quantum dots

Laterally localized electronic states are identified on a single layer of graphene on ruthenium by low temperature scanning tunneling spectroscopy (STS). The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a highly regular quantum dot-array with molecular precision. It is evidenced by quantum well resonances (QWRs) with energies that relate to the corrugation of the graphene layer. The dI/dV conductance spectra are modeled by a layer height dependent potential-well with a delta-function potential that describes the barrier for electron penetration into graphene. The resulting QWRs are strongest and lowest in energy on the isolated hill regions with a diameter of 2 nm, where the graphene is decoupled from the surface.

Kondo Effect of Cobalt Adatoms on a Graphene Monolayer Controlled by Substrate-Induced Ripples

The Kondo effect, a widely studied phenomenon in which the scattering of conduction electrons by magnetic impurities increases as the temperature T is lowered, depends strongly on the density of states at the Fermi energy. It has been predicted by theory that magnetic impurities on free-standing monolayer graphene exhibit the Kondo effect and that control of the density of states at the Fermi level by external means can be used to switch the effect on and off. However, though transport data for Co adatoms on graphene monolayers on several substrates have been reported, there exists no evidence for a Kondo effect. Here we probe the role of the substrate on the Kondo effect of Co on graphene by combining low-temperature scanning tunneling microscopy and spectroscopy measurements with density functional theory calculations. We use a Ru(0001) substrate that is known to cause graphene to ripple, yielding a moiré superlattice. The experimental data show a sharp Kondo resonance peak near the Fermi energy from only Co adatoms at the edge of atop regions of the moiré pattern. The theoretical results show that the variation of the distance from the graphene to the Ru substrate, which controls the spin polarization and local density of states at the Fermi energy, is the key factor for the appearance of the Kondo resonance. The results suggest that rippling of graphene by suitable substrates is an additional lever for tuning and selectively switching the appearance of the Kondo effect.

Nanostenciling for fabrication and interconnection of nanopatterns and microelectrodes

Stencil lithography is used for patterning and connecting nanostructures with metallic microelectrodes in ultrahigh vacuum. Microelectrodes are fabricated by static stencil deposition through a thin silicon nitride membrane. Arbitrary nanoscale patterns are then deposited at a predefined position relative to the microelectrodes, using as a movable stencil mask an atomic force microscopy (AFM) cantilever in which apertures have been drilled by focused ion beam. Large scale AFM imaging, combined with the use of a high precision positioning table, allows inspecting the microelectrodes and positioning the nanoscale pattern with accuracy better than 100nm.

Intrinsically patterned two-dimensional materials for selective adsorption of molecules and nanoclusters

Two-dimensional (2D) materials have been studied extensively as monolayers, vertical or lateral heterostructures. To achieve functionalization, monolayers are often patterned using soft lithography and selectively decorated with molecules. Here we demonstrate the growth of a family of 2D materials that are intrinsically patterned. We demonstrate that a monolayer of PtSe2 can be grown on a Pt substrate in the form of a triangular pattern of alternating 1T and 1H phases. Moreover, we show that, in a monolayer of CuSe grown on a Cu substrate, strain relaxation leads to periodic patterns of triangular nanopores with uniform size. Adsorption of different species at preferred pattern sites is also achieved, demonstrating that these materials can serve as templates for selective self-assembly of molecules or nanoclusters, as well as for the functionalization of the same substrate with two different species.

Strain-Induced Anisotropic Transport Properties of LaBaCo2O5.5+δ Thin Films on NdGaO3 Substrates

Thin films of double-perovskite structural LaBaCo2O5.5+δ were epitaxially grown on (110) NdGaO3 substrates by pulsed laser deposition. Microstructural studies by high-resolution X-ray diffraction and transmission electron microscopy revealed that the films have an excellent quality epitaxial structure. In addition, strong in-plane anisotropic strains were measured. Electrical transport properties of the films were characterized by an ultra-high-vacuum four-probe scanning tunneling microscopy system at different temperatures. It was found that the anisotropic in-plane strain can significantly tune the values of film resistance up to 590%.