Haixiong Ge

Greatly Enhanced Energy Density and Patterned Films Induced by Photo Cross-Linking of Poly(vinylidene fluoride-chlorotrifluoroethylene)

Greatly enhanced energy density in poly(vinylidene fluoride-chlorotrifluoroethylene) [P(VDF-CTFE)] is realized through interface effects induced by a photo cross-linking method. Being different from nanocomposites with lowered dielectric strength, the cross-linked P(VDF-CTFE)s possess a high breakdown field as well as remarkably elevated polarization, both of which contribute to the enhanced energy density as high as 22.5 J · cm(-3). Moreover, patterned thin films with various shapes and sizes are fabricated by photolithography, which sheds new light on the integration of PVDF-based electroactive polymers into organic microelectronic devices such as flexible pyroelectric/piezoelectric sensor arrays or non-volatile ferroelectric memory devices.

Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoimprint lithography

GaN nanorods with a period of 400 nm and diameter of 200 nm, and nano-gratings with a period of 400 nm and gap width of 100 nm are fabricated on wafers by a soft UV-curing nanoimprint lithography. These nanostructures show high periodicity and good morphology. The photoluminescence (PL) spectra exhibit that the integral PL intensity of GaN nanorods is enhanced as much as 2.5 times, compared to that of as-grown GaN films. According to finite-difference time-domain simulations and cathodoluminescence mappings, it is concluded that the enhancement for nanorods is due to the improvements of both spontaneous emission rate and light extraction efficiency caused by periodic GaN structures on the surface. By identifying the Raman shift of E1(TO) and E2(H) modes of GaN films with nano-gratings and nanorods, the normal-plane strain ε(zz) is determined. The PL emission energy is found to be proportional to the ε(zz), whose linear proportionality factor is calculated to be -27 meV GPa(-1).

Nonvolatile data storage using mechanical force-induced polarization switching in ferroelectric polymer

Ferroelectric polymers offer the promise of low-cost and flexible electronic products. They are attractive for information storage due to their spontaneous polarization which is usually switched by electric field. Here, we demonstrate that electrical signals can be readily written on ultra-thin ferroelectric polymer films by strain gradient-induced polarization switching (flexoelectric effect). A force with magnitude as small as 64nN is enough to induce highly localized (40 nm feature size) change in the polarization states. The methodology is capable of realizing nonvolatile memory devices with miniaturized cell size and storage density of tens to hundreds Gbit per square inch.

A New Strategy of Lithography Based on Phase Separation of Polymer Blends

Herein, we propose a new strategy of maskless lithographic approach to fabricate micro/nano-porous structures by phase separation of polystyrene (PS)/Polyethylene glycol (PEG) immiscible polymer blend. Its simple process only involves a spin coating of polymer blend followed by a development with deionized water rinse to remove PEG moiety, which provides an extremely facile, low-cost, easily accessible nanofabrication method to obtain the porous structures with wafer-scale. By controlling the weight ratio of PS/PEG polymer blend, its concentration and the spin-coating speed, the structural parameters of the porous nanostructure could be effectively tuned. These micro/nano porous structures could be converted into versatile functional nanostructures in combination with follow-up conventional chemical and physical nanofabrication techniques. As demonstrations of perceived potential applications using our developed phase separation lithography, we fabricate wafer-scale pure dielectric (silicon)-based two-dimensional nanostructures with high broadband absorption on silicon wafers due to their great light trapping ability, which could be expected for promising applications in the fields of photovoltaic devices and thermal emitters with very good performances, and Ag nanodot arrays which possess a surface enhanced Raman scattering (SERS) enhancement factor up to 1.64 × 108 with high uniformity across over an entire wafer.

Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale.

A series of highly ordered c-plane InGaN/GaN elliptic nanorod (NR) arrays were fabricated by our developed soft UV-curing nanoimprint lithography on a wafer. The photoluminescence (PL) integral intensities of NR samples show a remarkable enhancement by a factor of up to two orders of magnitude compared with their corresponding as-grown samples at room temperature. The radiative recombination in NR samples is found to be greatly enhanced due to not only the suppressed non-radiative recombination but also the strain relaxation and optical waveguide effects. It is demonstrated that elliptic NR arrays improve the light extraction greatly and have polarized emission, both of which possibly result from the broken structure symmetry. Green NR light-emitting diodes have been finally realized, with good current-voltage performance and uniform luminescence.

P(VDF-TrFE-CFE) terpolymer thin-film for high performance nonvolatile memory

Vinylidene fluoride-trifluoroethylene-chlorofluoroethylene terpolymer, P(VDF-TrFE-CFE), with small amount of CFE is utilized for thin-film nonvolatile memory. Polarization switching voltage for a 50 nm-thick film can be as low as 1 V, and is well suited for integrated driving electronics. The writing-erasing procedure is completely reversible. High signal-to-noise and high capability for data storage are observed in this memory system. Polarization state of the terpolymer is rather stable, making it applicable for memory devices. Polarization switching behavior in the terpolymer can be ascribed to reduced polar domain size with respect to the P(VDF-TrFE) copolymer, and energy cost of domain wall motion during electrically polarization switching decreases.

Phase Separation of Silicon-Containing Polymer/Polystyrene Blends in Spin-Coated Films

In this Article, two readily available polymers that contain silicon and have different surface tensions, polydimethylsiloxane (PDMS) and polyphenylsilsequioxane (PPSQ), were used to produce polymer blends with polystyrene (PS). Spin-coated thin films of the polymer blends were treated by O2 reactive-ion etching (RIE). The PS constituent was selectively removed by O2 RIE, whereas the silicon-containing phase remained because of the high etching resistance of silicon. This selective removal of PS substantially enhanced the contrast of the phase separation morphologies for better scanning electron microscope (SEM) and atomic force microscope (AFM) measurements. We investigated the effects of the silicon-containing constituents, polymer blend composition, concentration of the polymer blend solution, surface tension of the substrate, and the spin-coating speed on the ultimate morphologies of phase separation. The average domain size, ranging from 100 nm to 10 μm, was tuned through an interplay of these factors. In addition, the polymer blend film was formed on a pure organic layer, through which the aspect ratio of the phase separation morphologies was further amplified by a selective etching process. The formed nanostructures are compatible with existing nanofabrication techniques for pattern transfer onto substrates.

A new approach to rubber reinforcement

In this paper, we report the highly efficient reinforcement of dynamically cross-linked silane-modified phenol formaldehyde resin (SMPF) in ethylene-propylene diene terpolymer rubber (EPDM). Only 5 phr of SMPF is able to greatly improve the tensile strength of EPDM from 5 MPa to 28 MPa, which is 55% higher than that of EPDM filled with 30 phr of carbon black N330, and it still retains a high elongation of more than 600%. The scanning electron microscopy and X-ray diffraction results reveal the reinforcement mechanism of EPDM. SMPF is uniformly dispersed in the EPDM matrix by a conventional Banbury mixer and is dynamically cross-linked to form a greatly expanded hard phase comprising the interpenetrating polymer networks of EPDM and SMPF during the mixing process, which leads to a high modulus. The high tensile strength is attributed to the strain-induced crystallization of EPDM at high strain according to the X-ray diffraction patterns of the stretched EPDM–SMPF composites. These results reveal the high efficient reinforcement of the thermoset resin in rubber, demonstrate a new mechanism of rubber reinforcement and suggest a new direction for rubber reinforcement.

Fabrication of wafer-scale nanopatterned sapphire substrate by hybrid nanoimprint lithography

A hybrid nanoimprint soft lithography (HNSL) technique was used to fabricate nanopatterned sapphire substrates (NPSSs) for light-emitting diodes (LEDs). HNSL combines the high resolution of nanoimprint lithography (NIL) and the conformal contact of soft lithography. The key component of HNSL is the hybrid mold, which consists of rigid nanopatterns with an anti-adhesion coating on an elastic poly(dimethylsiloxane) support. The mold was used to fabricate nanopatterns on a 2-in. sapphire substrate through a soft UV-NIL system with a double-layer resist, a top UV-curable layer, and an underlying PMMA layer. Nickel dot arrays were formed from the imprinted patterns through a lift-off process and used as the etching mask during the sapphire etching process due to nickels high etching resistance. A wafer-scale circular-truncated-cone shaped NPSS was achieved by chlorine-based inductively coupled plasma etching. Typical blue LEDs with emission wavelengths of 452 nm were grown by metal-organic chemical vapor depo...

High resolution soft mold for UV-curing nanoimprint lithography using an oxygen insensitive degradable material

Soft nanoimprint lithography has been developed to overcome the disadvantages of conventional nanoimprint lithography based on rigid molds. Hybrid nanoimprint-soft lithography mold is an efficient strategy to improve the resolution of soft nanoimprint because a rigid UV-curable material is used as the structural layer. In this paper, the authors design a novel UV-curable material for hybrid soft mold fabrication, which is degradable under mild acidic conditions and insensitive to oxygen during photopolymerization. The material comprises an acid-degradable cross-linker, 2,10-diacryloyloxymethyl-1,4,9,12-tetraoxaspiro[4.2.4.2] tetradecane, and an acyrlated polysiloxane, poly[(mercaptopropyl)methylsiloxane]. Oxygen sensitivity of acrylate groups during UV curing is avoided due to the cross-linking mechanism based on thiol-ene chemistry. The cured material can be decomposed into linear chains through the cleavage of acid-labile ketal links and dissolved in organic solvent when heated in an acidic solution. Th...