Haiyang Zou

A Highly Stretchable and Washable All-Yarn-Based Self-Charging Knitting Power Textile Composed of Fiber Triboelectric Nanogenerators and Supercapacitors

Rapid advancements in stretchable and multifunctional wearable electronics impose a challenge on corresponding power devices that they should have comparable portability and stretchability. Here, we report a highly stretchable and washable all-yarn-based self-charging knitting power textile that enables both biomechanical energy harvesting and simultaneously energy storing by hybridizing triboelectrical nanogenerator (TENG) and supercapacitor (SC) into one fabric. With the weft-knitting technique, the power textile is qualified with high elasticity, flexibility, and stretchability, which can adapt to complex mechanical deformations. The knitting TENG fabric is able to generate electric energy with a maximum instantaneous peak power density of ∼85 mW·m-2 and light up at least 124 light-emitting diodes. The all-solid-state symmetrical yarn SC exhibits lightweight, good capacitance, high flexibility, and excellent mechanical and long-term stability, which is suitable for wearable energy storage devices. The assembled knitting power textile is capable of sustainably driving wearable electronics (for example, a calculator or temperature-humidity meter) with energy converted from human motions. Our work provides more opportunities for stretchable multifunctional power sources and potential applications in wearable electronics.

3D Orthogonal Woven Triboelectric Nanogenerator for Effective Biomechanical Energy Harvesting and as Self‐Powered Active Motion Sensors

The development of wearable and large-area energy-harvesting textiles has received intensive attention due to their promising applications in next-generation wearable functional electronics. However, the limited power outputs of conventional textiles have largely hindered their development. Here, in combination with the stainless steel/polyester fiber blended yarn, the polydimethylsiloxane-coated energy-harvesting yarn, and nonconductive binding yarn, a high-power-output textile triboelectric nanogenerator (TENG) with 3D orthogonal woven structure is developed for effective biomechanical energy harvesting and active motion signal tracking. Based on the advanced 3D structural design, the maximum peak power density of 3D textile can reach 263.36 mW m-2 under the tapping frequency of 3 Hz, which is several times more than that of conventional 2D textile TENGs. Besides, its collected power is capable of lighting up a warning indicator, sustainably charging a commercial capacitor, and powering a smart watch. The 3D textile TENG can also be used as a self-powered active motion sensor to constantly monitor the movement signals of human body. Furthermore, a smart dancing blanket is designed to simultaneously convert biomechanical energy and perceive body movement. This work provides a new direction for multifunctional self-powered textiles with potential applications in wearable electronics, home security, and personalized healthcare.

Silicon Nanowire/Polymer Hybrid Solar Cell-Supercapacitor: A Self-Charging Power Unit with a Total Efficiency of 10.5%

An integrated self-charging power unit, combining a hybrid silicon nanowire/polymer heterojunction solar cell with a polypyrrole-based supercapacitor, has been demonstrated to simultaneously harvest solar energy and store it. By efficiency enhancement of the hybrid nanowire solar cells and a dual-functional titanium film serving as conjunct electrode of the solar cell and supercapacitor, the integrated system is able to yield a total photoelectric conversion to storage efficiency of 10.5%, which is the record value in all the integrated solar energy conversion and storage system. This system may not only serve as a buffer that diminishes the solar power fluctuations from light intensity, but also pave its way toward cost-effective high efficiency self-charging power unit. Finally, an integrated device based on ultrathin Si substrate is demonstrated to expand its feasibility and potential application in flexible energy conversion and storage devices.

Enhanced Performance of a Self‐Powered Organic/Inorganic Photodetector by Pyro‐Phototronic and Piezo‐Phototronic Effects

Self-powered photodetectors (PDs) have long been realized by utilizing photovoltaic effect and their performances can be effectively enhanced by introducing the piezo-phototronic effect. Recently, a novel pyro-phototronic effect is invented as an alternative approach for performance enhancement of self-powered PDs. Here, a self-powered organic/inorganic PD is demonstrated and the influences of externally applied strain on the pyro-phototronic and the photovoltaic effects are thoroughly investigated. Under 325 nm 2.30 mW cm-2 UV illumination and at a -0.45% compressive strain, the PDs photocurrent is dramatically enhanced from ≈14.5 to ≈103 nA by combining the pyro-phototronic and piezo-phototronic effects together, showing a significant improvement of over 600%. Theoretical simulations have been carried out via the finite element method to propose the underlying working mechanism. Moreover, the pyro-phototronic effect can be introduced by applying a -0.45% compressive strain to greatly enhance the PDs response to 442 nm illumination, including photocurrent, rise time, and fall time. This work provides in-depth understandings about the pyro-phototronic and the piezo-phototronic effects on the performances of self-powered PD to light sources with different wavelengths and indicates huge potential of these two effects in optoelectronic devices.

On the Electron‐Transfer Mechanism in the Contact‐Electrification Effect

A long debate on the charge identity and the associated mechanisms occurring in contact-electrification (CE) (or triboelectrification) has persisted for many decades, while a conclusive model has not yet been reached for explaining this phenomenon known for more than 2600 years! Here, a new method is reported to quantitatively investigate real-time charge transfer in CE via triboelectric nanogenerator as a function of temperature, which reveals that electron transfer is the dominant process for CE between two inorganic solids. A study on the surface charge density evolution with time at various high temperatures is consistent with the electron thermionic emission theory for triboelectric pairs composed of Ti-SiO2 and Ti-Al2 O3 . Moreover, it is found that a potential barrier exists at the surface that prevents the charges generated by CE from flowing back to the solid where they are escaping from the surface after the contacting. This pinpoints the main reason why the charges generated in CE are readily retained by the material as electrostatic charges for hours at room temperature. Furthermore, an electron-cloud-potential-well model is proposed based on the electron-emission-dominatedcharge-transfer mechanism, which can be generally applied to explain all types of CE in conventional materials.

Temperature dependence of pyro-phototronic effect on self-powered ZnO/perovskite heterostructured photodetectors

Self-powered ZnO/perovskite heterostructured ultraviolet (UV) photodetectors (PDs) based on the pyro-phototronic effect have been recently reported as a promising solution for energy-efficient, ultrafast-response, and high-performance UV PDs. In this study, the temperature dependence of the pyro-phototronic effect on the photo-sensing performance of self-powered ZnO/perovskite heterostructured PDs was investigated. The current responses of these PDs to UV light were enhanced by 174.1% at 77 K and 28.7% at 300 K owing to the improved pyro-phototronic effect at low temperatures. The fundamentals of the pyro-phototronic effect were thoroughly studied by analyzing the chargetransfer process and the time constant of the current response of the PDs upon UV illumination. This work presents in-depth understandings about the pyrophototronic effect on the ZnO/perovskite heterostructure and provides guidance for the design and development of corresponding optoelectronics for ultrafast photo sensing, optothermal detection, and biocompatible optoelectronic probes.

Piezo‐Phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis–NIR Broadband Photodiode

Silicon underpins nearly all microelectronics today and will continue to do so for some decades to come. However, for silicon photonics, the indirect band gap of silicon and lack of adjustability severely limit its use in applications such as broadband photodiodes. Here, a high-performance p-Si/n-ZnO broadband photodiode working in a wide wavelength range from visible to near-infrared light with high sensitivity, fast response, and good stability is reported. The absorption of near-infrared wavelength light is significantly enhanced due to the nanostructured/textured top surface. The general performance of the broadband photodiodes can be further improved by the piezo-phototronic effect. The enhancement of responsivity can reach a maximum of 78% to 442 nm illumination, the linearity and saturation limit to 1060 nm light are also significantly increased by applying external strains. The photodiode is illuminated with different wavelength lights to selectively choose the photogenerated charge carriers (either electrons or holes) passing through the depletion region, to investigate the piezo-phototronic effect on electron or hole transport separately for the first time. This is essential for studying the basic principles in order to develop a full understanding about piezotronics and it also enables the development of the better performance of optoelectronics.

Integrated solar capacitors for energy conversion and storage

Solar energy is one of the most popular clean energy sources and is a promising alternative to fulfill the increasing energy demands of modern society. Solar cells have long been under intensive research attention for harvesting energy from sunlight with a high power-conversion efficiency and low cost. However, the power outputs of photovoltaic devices suffer from fluctuations due to the intermittent instinct of the solar radiation. Integrating solar cells and energystorage devices as self-powering systems may solve this problem through the simultaneous storage of the electricity and manipulation of the energy output. This review summarizes the research progress in the integration of new-generation solar cells with supercapacitors, with emphasis on the structures, materials, performance, and new design features. The current challenges and future prospects are discussed with the aim of expanding research and development in this field.

Largely Improved Near-Infrared Silicon-Photosensing by the Piezo-Phototronic Effect

Although silicon (Si) devices are the backbone of modern (opto-)electronics, infrared Si-photosensing suffers from low-efficiency due to its limitation in light-absorption. Here, we demonstrate a large improvement in the performance, equivalent to a 366-fold enhancement in photoresponsivity, of a Si-based near-infrared (NIR) photodetector (PD) by introducing the piezo-phototronic effect via a deposited CdS layer. By externally applying a -0.15‰ compressive strain to the heterojunction, carrier-dynamics modulation at the local junction can be induced by the piezoelectric polarization, and the photoresponsivity and detectivity of the PD exhibit an enhancement of two orders of magnitude, with the peak values up to 19.4 A/W and 1.8 × 1012 cm Hz1/2/W, respectively. The obtained maximum responsivity is considerably larger than those of commercial Si and InGaAs PDs in the NIR waveband. Meanwhile, the rise time and fall time are reduced by 84.6% and 76.1% under the external compressive strain. This work provides a cost-effective approach to achieve high-performance NIR photosensing by the piezo-phototronic effect for high-integration Si-based optoelectronic systems.

Simultaneously Enhancing Light Emission and Suppressing Efficiency Droop in GaN Microwire-Based Ultraviolet Light-Emitting Diode by the Piezo-Phototronic Effect

Achievement of p-n homojuncted GaN enables the birth of III-nitride light emitters. Owing to the wurtzite-structure of GaN, piezoelectric polarization charges present at the interface can effectively control/tune the optoelectric behaviors of local charge-carriers (i.e., the piezo-phototronic effect). Here, we demonstrate the significantly enhanced light-output efficiency and suppressed efficiency droop in GaN microwire (MW)-based p-n junction ultraviolet light-emitting diode (UV LED) by the piezo-phototronic effect. By applying a -0.12% static compressive strain perpendicular to the p-n junction interface, the relative external quantum efficiency of the LED is enhanced by over 600%. Furthermore, efficiency droop is markedly reduced from 46.6% to 7.5% and corresponding droop onset current density shifts from 10 to 26.7 A cm-2. Enhanced electrons confinement and improved holes injection efficiency by the piezo-phototronic effect are revealed and theoretically confirmed as the physical mechanisms. This study offers an unconventional path to develop high efficiency, strong brightness and high power III-nitride light sources.