Hamed Alsuraisry

A X-band digitally controlled 5-bit phase shifter in 0.18-μm CMOS technology

A X-band 5-bit switch type phase shifter (STPS) in 0.18-μm CMOS technology is presented in this paper. The proposed switched delay networks are using transmission lines to avoid process variation of small-size capacitors. For all 32 states, the insertion loss is -14 ± 3dB, including pad loss and the input and output return loss is > 8 dB over 8-12 GHz. The measzured rms amplitude error and rms phase error are smaller than 1.3 dB and 8.8°, respectively. The total chip size is 0.81 mm2, including pads with 0-mW dc power consumption.

A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology

A 24-GHz transformer-based stacked-FET power amplifier (PA) was designed in 90-nm CMOS technology. The stack configuration overcomes the low breakdown voltages of scaled transistors. The proposed power amplifier achieves a saturated output power of 21.7 dBm and 1-dB compressed output power (OP1dB) of 18.9 dBm with peak power-added efficiency (PAE) of 16.7% at 3-V supply voltage. The chip occupies an area of 0.53 × 0.51 mm2, including all the dc and RF pads.

A low-power Ku-band transformer-based receiver using low-cost 180nm CMOS for IoT applications

In this paper, a low-power transformer-based Ku-band receiver front-end is implemented in a 180-nm CMOS technology. The transformer-feedback gain-boosting technique and forward-body-bias technique are employed in three-stage (common gate + 2-stage common source) LNA to achieve a low-power design. A resistive ring mixer is chosen due to its advantage of zero-dc-power. The receiver demonstrates a 4.47-dB conversion gain at IF frequency of 100 MHz while consuming only 7.272 mW.

Millimeter-wave ultra-broadband IQ transceiver design - current status and future outlook

Millimeter-wave bands have become next-generation spectrum candidates for future 5G cellular applications. The ultra-broad bandwidth in millimeter-wave carrier provides fiber-optic grade wireless links. The required bandwidth in 5G will significantly increased from traditional 100MHz in 4G-LTE to 1GHz or 10GHz in 5G communications. This paper will review the current status of ultra-broadband TRx development and the future research directions of High-QAM millimeter-wave transceivers.

A review of microwatt low-noise amplifier for microwave and millimeter-wave IoT applications

In this paper, a review of microwatt low-noise amplifier (LNA) is presented. To achieve gain improvement and noise figure reduction simultaneously, a gain-boosting technique using transformer feedback is adopted in this LNA design. By employing current-reused, and forward-body-bias techniques, LNA can operate at a reduced supply voltage with micro-watt dc power consumption while maintaining good gain performance. From the measurement results, under a supply voltage of 0.63V, the LNA exhibits a minimum noise figure of 3.66 dB and a gain of 14.7 dB with only 387μW dc power consumption.

Three-way cascade power divider and combiner for satellite communications

In this paper, a Ka-band in-phase high isolation three-way cascade power divider/combiner for satellite applications is designed, simulated and measured. This three-way power divider/combiner is realized using microstrip line on Printed Circuit Board (PCB) substrate. The average insertion loss is about 5.50 dB over 17.7GHz to 20.7GHz frequency range with a maximum phase difference of 3 degrees.

A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology

This paper presents a 38 GHz power amplifier for the fifth generation mobile networks (5G) using 0.15 µm enhancement mode (E-mode) GaAs pHEMT technology. This proposed 3-stage PA consists of two driver stages, and one power stage with combining four power devices. It has 24.7 dB small signal gain and can achieve a saturated output power (Psat) of 28.1dBm and 1-dB compression output power (OP1dB) of 27.1 dBm with peak power-added efficiency (PAE) of 28% under 4V supply voltage. This chip occupies an area of 3.75 mm2.

Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor

In this paper, two ka-band up-link power amplifiers (PAs) using different technology are designed for satellite communication systems. Using 180-nm CMOS process, two stage common-source (CS) power amplifier attained the small signal gain of 12.6 dB, the peak output power of 13 dBm and power-added efficiency of 25.3%. Using 150-nm GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices, two-stage power amplifier attained the small signal gain of 16.3 dB, the output 1-dB compression power (OP1dB) 26 dBm and the power-added efficiency at OP1dB of 25.7%.

A X-band frequency synthesizer for FMCW radar in 180-nm CMOS

A 8GHz PLL for FMCW radar using 180-nm CMOS is presented in this paper. Utilizing a fractional-N synthesizer as the FMCW generator, it modulates the frequency across a range of 90 MHz. The phase noise of the proposed PLL is measured of -86.53 dBc/Hz at 1 MHz offset and -123 dBc/Hz at 10 MHz offset. The reference spur is -60 dBc. The dc power consumption is 32 mW under a 1.8-V supply.