Hans-Martin Ritter
NXP Semiconductors
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Publication
Featured researches published by Hans-Martin Ritter.
electrical overstress electrostatic discharge symposium | 2015
Guido Notermans; Hans-Martin Ritter; Joachim Utzig; Steffen Holland; Zhihao Pan; Jochen Wynants; Paul Huiskamp; Wim Peters; Burkhard Laue
High-speed interfaces, e.g. for USB3.1 or HDMI2.0, require high system level ESD protection, typically 15 kV, without affecting signal integrity. This paper describes the development of a novel bipolar process and the design of a fast-switching, low-voltage clamping protection combining high protection capability with excellent signal integrity.
electrical overstress electrostatic discharge symposium | 2016
Guido Notermans; Hans-Martin Ritter; Burkhard Laue; Stefan Seider
System level tests on a USB3 controller with on-board protection were found to yield irreproducible failure levels. A root cause analysis was performed using a combination of gun tests, TLP tests, and SEED simulation. It was found that an inductive current distribution between protection and SoC may explain the actual failure levels. Solutions are presented for effective on-board protection of USB3 controller boards. In addition, several gun artifacts were identified which prevent reproducible failure levels when using gun discharges. Instead, 50 Ω HMM testing yields results which correlate very well with SEED simulations.
electrical overstress electrostatic discharge symposium | 2015
Hans-Martin Ritter; Lars Koch; Mark Schneider; Guido Notermans
The set-up for air discharge ESD testing on single components has been systematically investigated. Excellent repeatability can be achieved with an optimized set-up. The first peak is missing due to long risetimes. Surprisingly, the total charge in an air discharge pulse is larger than in a contact discharge.
IEEE Transactions on Device and Materials Reliability | 2016
Guido Notermans; Hans-Martin Ritter; Joachim Utzig; Steffen Holland; Zhihao Pan; Jennifer Schuett; Jochen Wynants; Paul Huiskamp; Wim Peters; Burkhard Laue
This paper describes the development of an on-board system level protection for high-speed cable connections (e.g., USB3) with 15 kV robustness and a signal transfer rate of up to 10 Gb/s. A dedicated bipolar process is developed, on a high-resistive substrate with optimized diffusion profiles and a special via-on-via metallization to meet the capacitance target of 0.25 pF. The protection is shown to work well with several popular USB3 chipsets.
2009 31st EOS/ESD Symposium | 2009
Ingo Laasch; Hans-Martin Ritter; Achim Werner
Archive | 2011
Achim Werner; Hans-Martin Ritter
Archive | 2009
Hans-Martin Ritter; Ingo Laasch
Archive | 2004
Hans-Martin Ritter; Martin Lubbe; Jochen Wynants
Archive | 2017
Hans-Martin Ritter; Joachim Utzig; Frank Burmeister; Godfried Henricus Josephus Notermans; Jochen Wynants; Rainer Mintzlaff
Microelectronics Reliability | 2017
Clément Fleury; Guido Notermans; Hans-Martin Ritter; D. Pogany