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Dive into the research topics where Hany Fahmy is active.

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Featured researches published by Hany Fahmy.


electrical performance of electronic packaging | 2002

Frequency domain topology optimization methodology for a double data rate (DDR) 333 Mbps synchronous DRAM data interface

Woong Hwan Ryu; Hany Fahmy

We propose a novel topology optimization methodology in the frequency domain for a high-speed interface that selects an optimum topology and reduces the time-domain simulation matrix. The method is demonstrated on a DDR333 data interface.


ieee workshop on signal and power integrity | 2017

Impact of flexible PCB on DDR4 channel memor performance

Klaus Krohne; Fayez Elsisy; Hany Fahmy; Danilo Di Febo; Hideo Oie

Infotainment and PCB miniaturization are one of the challenges of many companies. Reduce the overall dimension of the devices preserving the high efficiency in terms of data transfer rate and power consumption is one of the missions in this century. However one of the limits of miniaturization was the memory dimension and memory placement on PCB. In many cases more than 30% of the PCB area was dedicated to the memory chip, and this can have an impact on miniaturization. In this paper we will evaluate a new technique that can reduce the impact of LPDDDR using a flexible connection between the main PCB and the PCB where all the memories are placed. We are calling, this technique, “Flex-DIMM”. It offers numerous advantages over the traditional memory-down approach, for example the same behavior reducing the PCB area. Another advantage of this technique was provided a plug-n-play approach for memory channels, this dramatically reduce the design cycle of embedded systems and the routing of the memory channel can be omitted. While the advantages in term of space reduction and placement optimization had, the impact on the high-speed memory channel, signal integrity, power integrity and EMC need to investigate dipper. The aim of this paper was to investigate a DDR4-2667, placed on new Rigid-Flex-PCB architecture, and evaluate the effect, of different flexible PCB configurations, on the main figure of merit in EMC term such as eye-opening and radiated emission and compare the performance to the traditional memory-down approach The investigation was done using a full wave 3D electromagnetic analysis performed by CST Studio suite 2016. We will also study the effect of bending angle and radius.


Archive | 2005

Method to calibrate DRAM Ron and ODT values over PVT

Kuljit S. Bains; Navneet Dour; Hany Fahmy; George Vergis; Christopher E. Cox


Archive | 2006

Memory system with dynamic termination

Hideo Oie; Hany Fahmy; Christopher E. Cox; George Vergis


Archive | 2005

Polarity driven dynamic on-die termination

Christopher E. Cox; George Vergis; Hany Fahmy; Hideo Oie


Archive | 2005

Method and apparatus to calibrate DRAM on resistance (Ron) and on-die termination (ODT) values over process, voltage and temperature (PVT) variations

Kuljit S. Bains; Navneet Dour; Hany Fahmy; George Vergis; Christopher E. Cox


Archive | 2002

Voltage plane with high impedance link

Woong Hwan Ryu; Hany Fahmy


Archive | 2003

High speed memory interface

Hany Fahmy; Woong Hwan Ryu


Archive | 1999

Apparatus and method for coupling to a memory module

David W. Frame; Christopher J. Banyai; Karl H. Mauritz; Albert Rudy Nelson; Quing-Lun Chen; Hany Fahmy


Archive | 2007

Per byte lane dynamic on-die termination

Christopher E. Cox; Hany Fahmy; Hideo Oie

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