Hari S. Solanki
Tata Institute of Fundamental Research
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Featured researches published by Hari S. Solanki.
Nanotechnology | 2010
Vibhor Singh; Shamashis Sengupta; Hari S. Solanki; Rohan Dhall; Adrien Allain; Sajal Dhara; Prita Pant; Mandar M. Deshmukh
We use suspended graphene electromechanical resonators to study the variation of resonant frequency as a function of temperature. Measuring the change in frequency resulting from a change in tension, from 300 to 30 K, allows us to extract information about the thermal expansion of monolayer graphene as a function of temperature, which is critical for strain engineering applications. We find that thermal expansion of graphene is negative for all temperatures between 300 and 30 K. We also study the dispersion, the variation of resonant frequency with DC gate voltage, of the electromechanical modes and find considerable tunability of resonant frequency, desirable for applications like mass sensing and RF signal processing at room temperature. With a lowering of temperature, we find that the positively dispersing electromechanical modes evolve into negatively dispersing ones. We quantitatively explain this crossover and discuss optimal electromechanical properties that are desirable for temperature-compensated sensors.
Physical Review B | 2009
Sajal Dhara; Hari S. Solanki; Vibhor Singh; Arjun Narayanan; Prajakta Chaudhari; Mahesh Gokhale; Arnab Bhattacharya; Mandar M. Deshmukh
We probe the magnetotransport properties of individual InAs nanowires in a field effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is well described by the weak localization (WL) description in diffusive conductors. The weak localization correction is modified to weak anti-localization (WAL) as the gate voltage is increased. We show that the gate voltage can be used to tune the phase coherence length (
Physical Review B | 2010
Hari S. Solanki; Shamashis Sengupta; Sajal Dhara; Vibhor Singh; Sunil Patil; Rohan Dhall; J. M. Parpia; Arnab Bhattacharya; Mandar M. Deshmukh
l_\phi
Physical Review B | 2011
Sajal Dhara; Hari S. Solanki; R. Arvind; Vibhor Singh; Shamashis Sengupta; Bhagyashree A. Chalke; Abhishek Dhar; Mahesh Gokhale; Arnab Bhattacharya; Mandar M. Deshmukh
) and spin-orbit length (
Applied Physics Letters | 2011
Sajal Dhara; Shamashis Sengupta; Hari S. Solanki; Arvind Maurya; R Arvind Pavan; M. R. Gokhale; Arnab Bhattacharya; Mandar M. Deshmukh
l_{so}
Applied Physics Letters | 2012
Vibhor Singh; Bushra Irfan; Ganesh Subramanian; Hari S. Solanki; Shamashis Sengupta; Sudipta Dubey; Anil Kumar; S. Ramakrishnan; Mandar M. Deshmukh
) by a factor of
Physical Review B | 2010
Shamashis Sengupta; Hari S. Solanki; Vibhor Singh; Sajal Dhara; Mandar M. Deshmukh
\sim
Nanotechnology | 2010
Vibhor Singh; Shamashis Sengupta; Hari S. Solanki; Rohan Dhall; Adrien Allain; Sajal Dhara; Prita Pant; Mandar M. Deshmukh
2. In the high field and low temperature regime we observe the mobility of devices can be modified significantly as a function of magnetic field. We argue that the role of skipping orbits and the nature of surface scattering is essential in understanding high field magnetotransport in nanowires.
Applied Physics Letters | 2011
Hari S. Solanki; Shamashis Sengupta; Sudipta Dubey; Vibhor Singh; Sajal Dhara; Anil Kumar; Arnab Bhattacharya; S. Ramakrishnan; Aashish A. Clerk; Mandar M. Deshmukh
We probe electromechanical properties of InAs nanowire (diameter
Cryogenics | 2012
Eric Alden Smith; R. De Alba; Nikolay Zhelev; R. G. Bennett; Vivekananda P. Adiga; Hari S. Solanki; Vibhor Singh; Mandar M. Deshmukh; J. M. Parpia
\ensuremath{\sim}100\text{ }\text{nm}