Harutoshi Hagino

Combined effect of nanoscale grain size and porosity on lattice thermal conductivity of bismuth-telluride-based bulk alloys

Here, we investigate the combined effect of the nanoscale crystal grains and porosity on the lattice thermal conductivity of bismuth-telluride-based bulk alloys using both experimental studies and modeling. The fabricated bulk alloys exhibit average grain sizes of 30 < d < 60 nm and porosities of 12% < Φ < 18%. The total thermal conductivities were measured using a laser flash method at room temperature, and they were in the range 0.24 to 0.74 W/m/K. To gain insight into the phonon transport in the nanocrystalline and nanoporous bulk alloys, we estimate the lattice thermal conductivities and compare them with those obtained from a simplified phonon transport model that accounts for the grain size effect in combination with the Maxwell-Garnett model for the porosity effect. The results of this combined model are consistent with the experimental results, and it shows that the grain size effect in the nanoscale regime accounts for a significant portion of the reduction in lattice thermal conductivity.

Enhanced thermoelectric properties of phase-separating bismuth selenium telluride thin films via a two-step method

A two-step method that combines homogeneous electron beam (EB) irradiation and thermal annealing has been developed to enhance the thermoelectric properties of nanocrystalline bismuth selenium telluride thin films. The thin films, prepared using a flash evaporation method, were treated with EB irradiation in a N2 atmosphere at room temperature and an acceleration voltage of 0.17 MeV. Thermal annealing was performed under Ar/H2 (5%) at 300 °C for 60 min. X-ray diffraction was used to determine that compositional phase separation between bismuth telluride and bismuth selenium telluride developed in the thin films exposed to higher EB doses and thermal annealing. We propose that the phase separation was induced by fluctuations in the distribution of selenium atoms after EB irradiation, followed by the migration of selenium atoms to more stable sites during thermal annealing. As a result, thin film crystallinity improved and mobility was significantly enhanced. This indicates that the phase separation resulti...

Erratum to: Structural and Thermoelectric Properties of Nanocrystalline Bismuth Telluride Thin Films Under Compressive and Tensile Strain

1.—Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan. 2.—Department of Mechanical and Control Engineering, Kyushu Institute of Technology, 1-1 Sensui, Tobata-ku, Kitakyushu 804-8550, Japan. 3.—Department of Mechanical Engineering, College of Engineering, Nihon University, 1 Nakagawara, Tokusada, Tamuramachi, Koriyama, Fukushima 963-8642, Japan. 4.—e-mail: takashiri@tokai-u.jp

Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam

The effects of homogenous electron beam (EB) irradiation on the crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te thin films were investigated. Both types of thin films were prepared by flash evaporation, after which homogeneous EB irradiation was performed at an acceleration voltage of 0.17 MeV. For the n-type thin films, nanodots with a diameter of less than 10 nm were observed on the surface of rice-like nanostructures, and crystallization and crystal orientation were improved by EB irradiation. The resulting enhancement of mobility led to increased electrical conductivity and thermoelectric power factor for the n-type thin films. In contrast, the crystallization and crystal orientation of the p-type thin films were not influenced by EB irradiation. The carrier concentration increased and mobility decreased with increased EB irradiation dose, possibly because of the generation of defects. As a result, the thermoelectric power factor of p-type thin films was not improve...

Thermal phonon transport in Si thin film with dog-leg shaped asymmetric nanostructures

Thermal phonon transport in single-crystalline Si thin films with dog-leg shaped nanostructures was investigated. Thermal conductivities for the forward and backward directions were measured and compared at 5 and 295 K by micro thermoreflectance. The Si thin film with dog-leg shaped nanostructures showed lower thermal conductivities than those of nanowires and two-dimensional phononic crystals with circular holes at the same surface-to-volume ratio. However, asymmetric thermal conductivity was not observed at small temperature gradient condition in spite of the highly asymmetric shape though the size of the pattern is within thermal phonon mean free path range. We conclude that strong temperature dependent thermal conductivity is required to observe the asymmetric thermal phonon conduction in monolithic materials with asymmetric nanostructures.

Thermal Transport Property of Silicon Membranes With Asymmetric Porous Structure

The size effect on thermal conduction due to phonon boundary scattering in films was studied as controlling heat conduction. Thermal rectifier was proposed as a new heat control concept by a ballistic rectifier relies on asymmetric scattering of phonons in asymmetric linear structure. We focus on the thermal rectification effect in membrane with asymmetric pores. We discussed on the thermal rectification effect from the calculation and thermal conductivity measurement of asymmetric structured membrane. Thermal conduction was calculated by using radiation calculation of ANSYS Fluent based on Boltzmann transport theory which is development of equation of phonon radiative transfer from view point of phonon mean free path and boundary scattering condition. In-plane thermal conductivities of free standing membranes with microsized asymmetric pores were measured by periodic laser heating measurement. From the result of calculation, phonons were transition to ballistic transport in the membranes with asymmetric shaped pores and thermal rectification effect was obtained on the condition of specular scattering because of the asymmetric back-scattering of ballistic phonons from asymmetric structure. The thermal rectification effect was increased with decreasing thickness of membrane shorter and shorter than mean free path of phonon. From the result of measurements, we were able to confirm the reduction of thermal conductivity based on ballistic phonon transport theory, but the strong thermal rectification effect was not confirmed.Copyright

Simultaneous measurements of thermal conductivity and electrical conductivity of micro-machined Silicon films

The in-plane effective thermal conductivity of free-standing Si thin films with periodic micropores was measured at -100 to 0 °C. The Si thin films with micropores were prepared from silicon-on-insulator (SOI) wafers by standard microfabrication processes. The dimensions of the free-standing Si thin films were 200μm×150μm×2 μm, with staggered 4 μm pores having an average pitch of 4 mm. The Si thin film serves both as a heater and thermometer. The average temperature rise of the thin film is a function of its in-plane thermal conductivity. The effective thermal conductivity was calculated using a simple one-dimensional heat conduction model. The measured thermal conductivity was much lower than that expected based on classical model evaluations. A significant phonon size effect was observed even in the microsized structures, and the mean free path for phonons is very long even at the room temperature.